Mask programmable read-only memory stacked above a semiconductor substrate

• US 4,424,579 A
• Filed: 02/23/1981
• Issued: 01/03/1984
• Est. Priority Date: 02/23/1981
• Status: Expired due to Term

• Current Assignee: Unisys Corporation
• Original Assignee: Burroughs Incorporated (Terreno Realty Corp.)
• Inventors: Roesner, Bruce B.
• Primary Examiner(s): Moffitt, James W.
• Application Number:
  US06/237,420
• Time in Patent Office: 1,044 Days
• Field of Search: 365/105, 365/175, 357/45, 357/15, 357/59, 357/71
• US Class Current: 365/105
• CPC Class Codes: G11C 17/06 using diode elements G11C17/14 takes precedence
• CPC Class Codes: G11C 17/08 using semiconductor devices, e.g. bipolar elements G11C17/06, G11C17/14 take precedence
• CPC Class Codes: H01L 27/1021 including diodes only
• CPC Class Codes: Y10S 148/164 Three dimensional processing

Abstract

In the disclosed read-only memory, address decode means for addressing information in the memory lie in a semiconductor substrate; an insulating layer covers the address decode means; an array of spaced-apart metal lines and semiconductor lines lies on the insulating layer over the address decode means; outputs from the address decode means respectively couple through the insulating layer to the metal lines and to the semiconductor lines; and a plurality of mask selectable electrical contacts between the metal lines and semiconductor lines forms a matrix of mask selectable diodes over the insulating layer representative of the information in the memory.

Claims

1. A mask programmable read-only memory having memory cells stacked above a semiconductor substrate comprised of:

a. address decode means integrated into a surface of said substrate for addressing said cells in said memory;

b. a first insulating layer covering said address decode means and said surface;

c. an array of spaced-apart memory cell select lines on said first insulating layer including;

i. a plurality of spaced-apart semiconductor lines formed on said first insulating layer;

ii. a second insulating layer formed over said semiconductor lines; and

iii. a plurality of spaced-apart metal lines formed over said second insulating layer and arranged orthogonal to said semiconductor lines;

d. outputs from said address decode means respectively coupled through said first insulating layer to said select lines wherein each cell of said memory is formed at an intersection of one of said semiconductor lines and one of said metal lines and further includes a mask selectable Schottky diode at select ones of said intersections representative of the information in said cell.

2. A memory according to claim 1 wherein each of said semiconductor lines includes an N^- polycrystalline semiconductor layer, and wherein said mask selectable diodes are formed by respective metallic junctions in said N^- layer.

3. A memory according to claim 2 wherein each of said semiconductor lines further includes an N⁺ layer and a metal layer in contact with said N⁺ layer.

4. A memory according to claim 1 wherein each of said metal lines includes consecutive layers of a noble metal compound, a barrier metal, and a conductive metal;

with said noble metal compound forming a portion of said mask selectable diode in each cell.

5. A memory according to claim 1 wherein said address decode means includes means for sensing voltage levels on said metal lines as output signals of said memory.

6. A memory according to claim 1 wherein said address decode means includes means for sensing voltage levels on said semiconductor lines as output signals of said memory.

7. A diode memory fabricated over an integrated circuit in a semiconductor substrate comprising:

a. a first insulating layer formed over said integrated circuit;

b. first spaced-apart conductors formed on said first insulating layer and being made of a double layer polycrystalline material wherein a first layer adjacent said first insulating layer is comprised of N+ polycrystalline material having a relatively high concentration of dopant material and an adjacent overlying second layer is comprised of N- polycrystalline material having a relatively low concentration of dopant material;

c. a second insulating layer formed on said first insulating layer covering said first conductors except at predetermined locations;

d. second spaced-apart conductors formed on said second insulating layer so as to cross over and above said first spaced-apart conductors;

e. a plurality of Schottky diodes formed between said first and second conductors at said predetermined locations; and

f. electrical connection means passing through said insulating layers for electrically interconnecting particular ones of said first and second conductors to particular portions of said integrated circuitry.

8. The invention in accordance with claim 7, wherein said integrated circuit in said semiconductor substrate includes addressing and sensing circuitry for said diode memory, and wherein said electrical connection means provides interconnections between said lines and said addressing and sensing circuitry.

9. The invention in accordance with claim 7, wherein each Schottky diode provided at a crossing includes a layer forming a compound with said N- polycrystalline layer so as to create a Schottky barrier junction at the interface therebetween, and conductive means electrically connecting said compound to the respective other line at the crossing.

10. The invention in accordance with claim 9, wherein said conductive means includes a barrier metal layer provided between said compound and said other line.

11. The invention in accordance with claim 10, wherein the concentration of dopant material in said N- polycrystalline layer is 10¹⁴ -10¹⁷ dopant atoms/cm³ and the concentration of dopant in said N+ polycrystalline layer is greater than about 10¹⁹ atoms/cm³.

12. An electrical structure incorporating a Schottky diode comprising:

a. an insulating layer;

b. an N+ polycrystalline layer having a relatively high concentration of dopant material formed on said insulating layer;

c. an N- polycrystalline layer having a relatively low concentration of dopant material formed on said N+ polycrystalline layer;

d. a metal layer provided on said N- polycrystalline layer forming a compound therewith such that a Schottky barrier junction is created at the interface between said compound and said N- polycrystalline layer;

e. a barrier metal layer formed on said compound; and

f. a conductive metal layer formed on said barrier metal layer.

13. The invention in accordance with claim 12, wherein a plurality of said diodes are provided on said insulating layer, wherein first diode interconnection means are provided electrically interconnecting said polycrystalline layers of said diodes and second diode interconnection means are provided interconnecting said conductive layers of said diodes.

14. The invention in accordance with claim 13, wherein said insulating layer is provided on a substrate incorporating an integrated circuit, and wherein electrical connection means are provided passing through said insulating layer for interconnecting said first and second diode interconnection means to particular portions of said integrated circuit.

15. The invention in accordance with claim 14, wherein said first diode interconnection means comprises first spaced apart lines and said second diode interconnection means comprises second spaced apart lines crossing said first lines and insulated therefrom, wherein said first lines are formed as extensions of said polycrystalline layers and said second lines are formed as extensions of said conductive and barrier metal layers, and wherein said diodes are selectively provided at particular crossing locations of said first and second lines.

16. The invention in accordance with claim 15, wherein a silicide layer is provided between said insulating layer and said N+ polycrystalline layer.

17. The invention in accordance with claim 15, wherein the concentration of dopant material in said N- polycrystalline layer is 10¹⁴ -10¹⁷ dopant atoms/cm³ and the concentration of dopant in said N+ polycrystalline layer is greater than about 10¹⁹ atoms/cm³.

18. The invention in accordance with claim 17, wherein the thickness of said insulating layer is of the same order as the thickness of said polycrystalline layers.