Faceted low absorptance solar cell

• US 4,427,839 A
• Filed: 11/09/1981
• Issued: 01/24/1984
• Est. Priority Date: 11/09/1981
• Status: Expired due to Fees

• Current Assignee: General Electric Company
• Original Assignee: General Electric Company
• Inventors: Hall, Robert N.
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US06/319,824
• Time in Patent Office: 806 Days
• Field of Search: 136/255, 136/256, 136/249 MS, 357/30
• US Class Current: 136/255
• CPC Class Codes: H01L 31/022458 for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
• CPC Class Codes: H01L 31/035281 Shape of the body
• CPC Class Codes: H01L 31/03529 Shape of the potential jump barrier or surface barrier
• CPC Class Codes: H01L 31/047 PV cell arrays including PV cells having multiple vertical junctions or multiple V-groove junctions formed in a semiconductor substrate
• CPC Class Codes: H01L 31/056 the light-reflecting means being of the back surface reflector [BSR] type
• CPC Class Codes: H01L 31/068 the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
• CPC Class Codes: H01L 31/0682 back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
• CPC Class Codes: Y02E 10/52 PV systems with concentrators
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells

Abstract

A solar cell includes a semiconductor wafer of one conductivity type with a front radiation receiving surface having a plurality of pyramidal apertures therein. The spacing of adjacent apertures is selected to maximize the escape of undesired radiation. A material with a high index of refraction fills the apertures and further enhances radiation escape. The surfaces of the wafer are provided with thin regions of opposite conductivity type. Two sets of electrodes are provided at selected locations on the rear side of the wafer. One set of electrodes contacts the region of opposite conductivity type on the rear side. The other set of electrodes contacts the wafer through openings in the region of opposite conductivity type.

Claims

1. A photovoltaic device comprising:

a body of cubic symmetry monocrystalline semiconductor material of one conductivity type having a upper and lower opposite parallel major surfaces, each parallel to a (100) crystallographic plane of said body;

a plurality of recesses arranged in equally spaced rows and columns in said body, each of said recesses being in the form of a quadrangular pyramid with the base of the pyramid coplanar with said upper major surface and extending a uniform distance into said body, each of the sides of the recesses being parallel to a (111) plane of said body of monocrystalline semiconductor material, the bases of adjacent pyramids being separated by a distance s defined by the relation s=3t/2 (cot θ

-b/4), wherein t is the separation of said upper and lower parallel major surfaces, b is the length of a side of the pyramind base, and θ

is the propagation angle of light that has entered the semicondutor through the (111) surfaces of the apertures;

a first thin region of opposite conductivity type in said body along said upper major surface of said body;

a second thin region of opposite conductivity type in said body along said lower major surface of said body, said second thin region of opposite conductivity type having openings therein exposing portions of said body of said one conductivity type;

a plurality of third thin regions of opposite conductivity type, each in said body along the sides of said recesses, each of said third thin regions contacting said first and second thin regions;

a dielectric layer disposed on said lower major surface of said body, said dielectric layer having a first plurality of openings under said recesses and exposing said portions of said body of said one conductivity type, said dielectric layer having a second plurality of openings under said recesses and exposing said second thin region of opposite conductivity type;

a first means positioned on said dielectric layer for making conductive connections to said exposed portions of said body; and

a second means positioned on said dielectric layer for making conductive connections to said second thin region of opposite conductivity type.

2. The device of claim 1 wherein said first and second means for making conductive connections, which are positioned on said dielectric layer, form therewith a highly reflective contact region.

3. The device of claim 2 wherein the conductive connections to the exposed portions of said body and to said second thin region of opposite conductivity type are located under a corner of the base of each of said quadrangular pyramids.

4. The device of claim 3 wherein the conductive connections to the exposed portions of said body and to said second thin region of opposite conductivity type are located a distance b/8 from each of the sides forming a corner of the base of each of said quandrangular pyramids.

5. The device of claim 3 in which said cubic symmetry monocrystalline semiconductor material is selected from the group consisting of silicon and germanium.

6. The device of claim 5 in which said monocrystalline cubic symmetry semiconductor material comprises silicon.

7. The device of claim 1 in which each of said recesses extends from said upper major surface to said lower major surface.

8. The device of claim 1 in which said recesses are filled with a material having a high index of refraction.

9. The device of claim 1 in which the base of each of said quadrangular pyramids is in the shape of a square.

10. The device of claim 1 in which each of said first and third thin regions is less than about 0.3 micron thick.

11. The device of claim 1 in which said second thin region of opposite conductivity type is thicker than said first and third thin regions of opposite conductivity type.

12. The device of claim 1 in which the base of each of said quadrangular pyramids is in the shape of a rectangle, and wherein b is the length of the smaller of the rectangle sides.