Semiconductor vapor phase growing apparatus
First Claim
1. Semiconductor vapor phase growing apparatus comprising:
- a reaction furnace for vapor phase growing a semiconductor on a semiconductor substrate;
means for heating said substrate;
sources of various gases necessary for vapor phase growth;
a pipe line network for interconnecting said reaction furnace and said sources;
valve means connected in said pipe line network for supplying predetermined quantities of said gases to said reaction furnace; and
control means for supplying control signals to said valve means,said control means including a first memory region for storing a process program group comprising a group of process programs including informations regarding a time for designating a process of vapor phase growth in said reaction furnace, gases utilized, flow quantities thereof and furnace temperature, and a second memory region that stores a system program that decodes said process program group for producing control signals for said valve means.
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Accused Products
Abstract
In apparatus for vapor phase growing N or P type semiconductor layers on semiconductor substrates supported by a rotary support disposed in a reaction furnace, and various types of gases are admitted into the furnace through a pipe line network and valves, there is provided a control device for ON-OFF controlling the valves according to a predetermined program. The control device comprises a memory region for storing a process program group including a group of process programs including informations regarding a time for designating a process of vapor phase growth in the reaction furnace, gases utilized, flow quantity thereof and furnace temperature, and a system program that decodes the program group for producing control signals for the valves.
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Citations
11 Claims
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1. Semiconductor vapor phase growing apparatus comprising:
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a reaction furnace for vapor phase growing a semiconductor on a semiconductor substrate; means for heating said substrate; sources of various gases necessary for vapor phase growth; a pipe line network for interconnecting said reaction furnace and said sources; valve means connected in said pipe line network for supplying predetermined quantities of said gases to said reaction furnace; and control means for supplying control signals to said valve means, said control means including a first memory region for storing a process program group comprising a group of process programs including informations regarding a time for designating a process of vapor phase growth in said reaction furnace, gases utilized, flow quantities thereof and furnace temperature, and a second memory region that stores a system program that decodes said process program group for producing control signals for said valve means. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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Specification