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Semiconductor vapor phase growing apparatus

  • US 4,430,959 A
  • Filed: 01/26/1983
  • Issued: 02/14/1984
  • Est. Priority Date: 01/28/1982
  • Status: Expired
First Claim
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1. Semiconductor vapor phase growing apparatus comprising:

  • a reaction furnace for vapor phase growing a semiconductor on a semiconductor substrate;

    means for heating said substrate;

    sources of various gases necessary for vapor phase growth;

    a pipe line network for interconnecting said reaction furnace and said sources;

    valve means connected in said pipe line network for supplying predetermined quantities of said gases to said reaction furnace; and

    control means for supplying control signals to said valve means,said control means including a first memory region for storing a process program group comprising a group of process programs including informations regarding a time for designating a process of vapor phase growth in said reaction furnace, gases utilized, flow quantities thereof and furnace temperature, and a second memory region that stores a system program that decodes said process program group for producing control signals for said valve means.

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