Inductively coupled discharge for plasma etching and resist stripping

• US 4,431,898 A
• Filed: 09/01/1981
• Issued: 02/14/1984
• Est. Priority Date: 09/01/1981
• Status: Expired due to Term

• Current Assignee: Lam Research Corporation
• Original Assignee: Perkinelmer Incorporated
• Inventors: Reinberg, Alan R., Zarowin, Charles B., Steinberg, George N.
• Primary Examiner(s): Paschall, M. H.
• Application Number:
  US06/298,416
• Time in Patent Office: 896 Days
• Field of Search: 219/121 PD, 219/121 PE, 219/121 PG, 219/121 PF, 219/10.75, 219/10.71, 204/192 E, 204/210, 204/164, 156/643, 156/646
• US Class Current: 219/121.43
• CPC Class Codes: C23F 4/00 Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
• CPC Class Codes: H01J 37/32009 Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources plasma generation in general H05H1/24

Abstract

Apparatus for plasma etching of semiconductor devices. A plasma chamber is inductively coupled to a source of A.C. power wherein the semiconductor devices are etched. Alternately, the semiconductor devices may be etched or stripped at a location downstream of the plasma chamber.

Claims

1. An apparatus for the plasma etching of semiconductor devices comprising,

a plasma chamber comprising tubing means defining a continuous discharge path about an opening through said plasma chamber,

a power source,

transformer means for inductively coupling said power source to said plasma for generating a plasma therein,

platform means made of electrically conductive naterial disposed in such plasma chamber for supporting one or more semiconductor devices to be etched,

a variable source of d.c. or a.c. voltage connected to said platform for controlling the level of sheath voltage between said plasma and said semiconductor device.

2. An apparatus according to claim 1 wherein said transformer means comprises:

a highly permeable magnetic core disposed about a portion of said tube and passing through said opening;

a primary winding encircling said core connected to said power source,

said continuous discharge path acting as the secondary winding of said transformer means.

3. An apparatus according to claim 2 further including:

a chamber means connected in said egress means remote from said plasma chamber,

pump means connected to said chamber means causing species from said plasma in said plasma chamber to be transported to said chamber means whereby wafers disposed in said chamber means are stripped of photoresist.

4. An apparatus according to claim 2 further including,

pump means connected to said egress means for transporting etching gases through said plasma chamber and maintaining pressure in said plasma chamber at a desired value.

5. An apparatus according to claim 3 in which the turns ratio of said transformer means is n :

1 where n may be any predetermined number.

6. An apparatus according to claim 4 in which the turns ratio of said transformer means is n:

1 where n may be any predetermined number including fractional numbers.