Method and apparatus for doping semiconductor material

• US 4,434,036 A
• Filed: 05/03/1982
• Issued: 02/28/1984
• Est. Priority Date: 05/12/1981
• Status: Expired due to Fees

• Current Assignee: Siemens AG
• Original Assignee: Siemens AG
• Inventors: Kausche, Helmold, Sp/a/ th, Werner, Hoerschelmann, Konstantin
• Primary Examiner(s): Edmundson, F.
• Application Number:
  US06/374,415
• Time in Patent Office: 666 Days
• Field of Search: 204/164, 148/189
• US Class Current: 438/513
• CPC Class Codes: C30B 31/16 Feed and outlet means for the gases; Modifying the flow of the gases
• CPC Class Codes: C30B 31/22 by ion-implantation
• CPC Class Codes: H01L 21/2236 from or into a plasma phase
• CPC Class Codes: H01L 21/265 producing ion implantation
• CPC Class Codes: H01L 21/26513 of electrically active species

Abstract

Method for doping semiconductor material, including a container into which doping material is led and aimed at the semiconductor material by means of an electrical field, which includes maintaining the doping material in a plasma in the container, and leading doping material ions into the semiconductor material by means of the electrical field, and an apparatus for carrying out the method.

Claims

1. Method for doping semiconductor material, including a container into which doping material is led and aimed at the semiconductor material by means of an electrical field, which comprises placing a low-pressure plasma containing the doping material in a hydrogen-phosphine mixture in the container, maintaining the low-pressure plasma at a pressure of substantially 8×

10^-4 torr, placing a high-frequency coil around the container, maintaining the frequency of the coil at substantially 4 MHz, and exciting the plasma to lead doping material ions into the semiconductor material by means of the electrical field.

2. Method according to claim 1, which comprises providing the plasma in the form of a capacitively coupled-in high-frequency plasma.

3. Method according to claim 1, which comprises providing the plasma in the form of an inductively excited high-frequency plasma.

4. Method according to claim 3, which comprises separately controlling the electromagnetic field for plasma generation and for forming a strain voltage for accelerating ions onto a target.

5. Method according to claim 1, which comprises generating the plasma in the form of a capacitively excited high-frequency plasma in a doping gas, accelerating the doping material ions onto a target on which the semiconductor material to be doped is provided, and providing the semiconductor material in the form of semiconductor substrates.

6. Method according to claim 1, which comprises generating the plasma in the form of an inductively excited high-frequency plasma in a doping gas, accelerating the doping material ions onto a target on which the semiconductor material to be doped is provided, and providing the semiconductor material in the form of semiconductor substrates.

7. Method according to claim 5, which comprises providing the doping gas from the group consisting of PH₃, B₂ H₆ and phosphoric vapor, from an evaporator source.

8. Method according to claim 3, which comprises providing the tank in the form of a glass receptacle.

9. Method according to claim 3, which comprises providing the tank in the form of a glass receptacle, and exciting the plasma in the form of a ring discharge with the coil.

10. Method according to claim 8, which comprises applying a strain voltage of substantially 500 volts between a target and an anode for several seconds.

11. Method according to claim 1, which comprises maintaining a current density on a target of substantially 1 mA/cm².

12. Method according to claim 4, 5, 6 or 10, which comprises maintaining a current density on the target of substantially 1 mA/cm².

13. Method according to claim 12, which comprises slowly upwardly controlling the strain voltage to reduce the maximal doping level in the semiconductor material and to obtain an optimal output doping profile.

14. Method according to claim 1, which comprises curing the semiconductor material at substantially 950°

C. for substantially 30 minutes, and forming the desired doping profile by diffusion.

15. Method according to claim 1, which comprises curing the semiconductor material by bombardment with a laser.

16. Method according to claim 1, which comprises curing the semiconductor material by bombardment with an electron beam.