Sputtering cathode apparatus

• US 4,437,966 A
• Filed: 09/30/1982
• Issued: 03/20/1984
• Est. Priority Date: 09/30/1982
• Status: Expired due to Term

• Current Assignee: GTE Products Corporation
• Original Assignee: GTE Products Corporation
• Inventors: Hope, Lawrence L., Davey, Ernest A.
• Primary Examiner(s): Demers, Arthur P.
• Application Number:
  US06/431,958
• Time in Patent Office: 537 Days
• Field of Search: 204/192 R, 204/298
• US Class Current: 204/298.29
• CPC Class Codes: H01J 37/3408 Planar magnetron sputtering

Abstract

A sputtering cathode apparatus for the deposition of thin films which are produced at a relatively high deposition rate. A relatively large planar magnetron sputtering system or apparatus is provided with a preferred single convoluted electron path so as to obtain high geometric efficiency. The target is larger than the substrate and the substrate motion is confined to an area within the defined target area. The cathode system requires a vacuum system of relatively small dimension due to the increase in target size in comparison with substrate size along with the provision for multiple plasma legs separated by non-emissive regions therebetween. This construction enables minimized substrate motion relative to the target.

Claims

1. In a sputtering cathode apparatus for the deposition of a thin film on a substrate which is moved relative to the apparatus and including planar sputtering means and means for exciting the planar sputtering means, the improvement comprising a sputtering cathode target associated with said sputtering means, said target having a predetermined plasma sputtering area in the form of a closed convoluted electron path defining a target area larger than the planar area of the substrate, said substrate motion being confined to an area within said defined target area, and said predetermined plasma sputtering area including multiple plasma legs separated by non-emissive regions therebetween.

2. In a sputtering cathode apparatus as set forth in claim 1 wherein the width of a plasma leg is comparable to the width of the non-emissive region.

3. In a sputtering cathode apparatus as set forth in claim 2 wherein both leg and non-emissive region area widths area on the order of 0.65 inch.

4. In a sputtering cathode apparatus as set forth in claim 1 wherein the target width is on the order of 20 inches.

5. In a sputtering cathode apparatus as set forth in claim 1 wherein said plasma sputtering area comprises multiple separate plasma loops.