Bulk semiconductor switch
First Claim
Patent Images
1. Apparatus for switching kilovolt magnitude voltages in times of the order of one nanosecond or less, the apparatus comprising:
- a block of electrical insulating material;
two microstrips of electrically conducting material of thickness 1-3 μ
m, collinearly positioned and spaced apart from one another by a gap of 1-3 mm, both microstrips being mounted on one side of the insulating material block;
a substantially rectangular block of solid semiconductor material having a length of at least twice the length of the microstrip gap and being doped with boron at a concentration of between 1015 /cm3 and 1018 /cm3, with the semiconductor block being maintained in electrical contact with the two microstrips and lying across the microstrip gap;
a voltage source electrically connected to the two microstrips to impress a substantially constant voltage of at least 5 KV between the microstrips;
cryogenic cooling means adjacent to the semiconductor block for cooling the block to a temperature T≦
230°
K.; and
a source of pulsed radiation producing a radiative beam output of 10-100 nanojoules, the radiation beam being directed at the microstrip gap and the semiconductor block lying between the microstrip gap and the pulsed radiation source.
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Accused Products
Abstract
Apparatus for switching kilovoltages in times of the order of one nanosecond or less, using optical radiation with energy input 10-7 Joules, applied to a cryogenically cooled, suitably doped block of semiconductor material that is positioned across an electrical gap.
38 Citations
7 Claims
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1. Apparatus for switching kilovolt magnitude voltages in times of the order of one nanosecond or less, the apparatus comprising:
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a block of electrical insulating material; two microstrips of electrically conducting material of thickness 1-3 μ
m, collinearly positioned and spaced apart from one another by a gap of 1-3 mm, both microstrips being mounted on one side of the insulating material block;a substantially rectangular block of solid semiconductor material having a length of at least twice the length of the microstrip gap and being doped with boron at a concentration of between 1015 /cm3 and 1018 /cm3, with the semiconductor block being maintained in electrical contact with the two microstrips and lying across the microstrip gap; a voltage source electrically connected to the two microstrips to impress a substantially constant voltage of at least 5 KV between the microstrips; cryogenic cooling means adjacent to the semiconductor block for cooling the block to a temperature T≦
230°
K.; anda source of pulsed radiation producing a radiative beam output of 10-100 nanojoules, the radiation beam being directed at the microstrip gap and the semiconductor block lying between the microstrip gap and the pulsed radiation source. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Current AssigneePower Spectra Incorporated
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Original AssigneePower Spectra Incorporated
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InventorsDavis, Steven J.
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Primary Examiner(s)Nelms, David C.
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Application NumberUS06/326,683Time in Patent Office839 DaysField of Search250/211 R, 250/211 J, 357/29, 357/30, 357/22US Class Current250/214.00RCPC Class CodesH01L 31/09 Devices sensitive to infrar...
