Technique for inspecting semiconductor wafers for particulate contamination

• US 4,441,124 A
• Filed: 11/05/1981
• Issued: 04/03/1984
• Est. Priority Date: 11/05/1981
• Status: Expired due to Term

• Current Assignee: AT&T Technologies Inc (Nokia Corporation)
• Original Assignee: Western Electric Co., Inc. (Nokia Corporation)
• Inventors: Schmitt, Randal L., Heebner, Richard W.
• Primary Examiner(s): ORSINO JR, JOSEPH
• Application Number:
  US06/318,523
• Time in Patent Office: 880 Days
• Field of Search: 358/106, 356/335, 356/336, 356/337, 356/338, 356/339, 356/340, 356/343, 356/237, 250/563, 250/572, 250/574
• US Class Current: 348/126
• CPC Class Codes: G01N 2021/4719 using a optical fibre array
• CPC Class Codes: G01N 21/94 Investigating contamination, e.g. dust G01N21/85 takes precedence
• CPC Class Codes: G01N 21/9501 Semiconductor wafers manufacturing processes per se of semiconductor devices implementing a measuring step H01L22/10

Abstract

A laser beam (88) is raster scanned over the surface of a patterned semiconductor wafer (66) at an angle normal thereto. A plurality of detectors, radially spaced from the wafer (66) and substantially coplanar therewith detect light scattered from contaminating particulate thereon. The detected light is converted into a video signal that is forwarded to a video monitor (84) to display the particulate material while eliminating the patterned surface background.

Claims

1. An apparatus for detecting particulate material on the surface of a semiconductor wafer having a pattern thereon, comprising:

means for scanning a beam of light over the patterned surface of the wafer at an angle normal thereto; and

a plurality of detectors mounted circumferential of the wafer and substantially coplanar with the surface thereof for detecting light scattered substantially along the surface of the wafer by the particulate material and not the pattern.

2. The apparatus as set forth in claim 1 comprising:

means for converting the monitored light into a first video signal representation of the particulate.

3. The apparatus as set forth in claim 2, comprising:

means for modulating a scanning electron beam of a video monitor with said first video signal to form an image of the particulate on said monitor.

4. The apparatus as set forth in claim 2, comprising:

means for forwarding the video signal representation to a computer to determine the size and location and quantity of particulate on the wafer surface.

5. The apparatus as set forth in claim 4, comprising:

means for monitoring light scattered from the surface of the wafer in a direction substantially normal thereto which is indicative of at least the wafer pattern; and

means for converting the monitored light into a second video signal representing the wafer pattern.

6. The apparatus as set forth in claim 5, comprising:

means for further modulating the scanning electron beam of the video monitor with the second video signal to simultaneously form an image of the pattern and particulate on said monitor.