Deformable mirror light modulator

• US 4,441,791 A
• Filed: 06/07/1982
• Issued: 04/10/1984
• Est. Priority Date: 09/02/1980
• Status: Expired due to Term

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Hornbeck, Larry J.
• Primary Examiner(s): Sikes, William L.
• Assistant Examiner(s): Scott, Jr., Leon
• Application Number:
  US06/386,141
• Time in Patent Office: 673 Days
• Field of Search: 350/360, 350/385, 372/43-46, 372/49, 372/26, 357/30, 357/51
• US Class Current: 359/295
• CPC Class Codes: G02B 26/06 for controlling the phase of light G02B26/08 takes precedence , measuring optical phase difference G01J9/00
• CPC Class Codes: G02B 26/0825 the reflecting element being a flexible sheet or membrane, e.g. for varying the focus flexible mirrors for cosmetic use A45D42/24
• CPC Class Codes: G02F 1/0128 based on electro-mechanical, magneto-mechanical, elasto-optic effects
• CPC Class Codes: G09F 9/372 the positions of the elements being controlled by the application of an electric field

Abstract

A light modulator comprising a light-reflective metallized membrane defining a deformable mirror disposed over a semiconductor substrate of one conductivity type in which a matrix array of field effect address transistors are formed, the metallized membrane cooperating with a matrix of floating metallic field plate members disposed on an insulating layer covering the substrate to define an array of air gap capacitors for line addressing by the field effect address transistors. The floating metallic field plates are opaque to light and prevent photocharge generation in the active regions of the matrix array of field effect address transistors. The metallized membrane is spaced from the field effect address transistors and the metallic floating field plates by an upstanding semiconductor grid structure which is formed on the insulating layer of the semiconductor substrate and defines gate electrodes for the address transistors. The metallized membrane is mounted on the upstanding semiconductor grid structure by molecular bonding to the contact members disposed over the semiconductor grid structure. The metallized membrane is formed of a polymer of nitrocellulose as a flexible carrier layer on at least one surface of which is disposed a thin metallic coating providing a light reflective surface. Each transistor in the array of field effect address transistors is line-addressable, and the metallized membrane in each cell of the matrix array of air gap capacitors is deflectable inwardly toward the substrate in response to the signal on the address transistor corresponding thereto. Should a potential above a predetermined magnitude be placed on an individual air gap capacitor, the metallized membrane will transfer charge to the floating field plate and return to zero deflection. The floating field plate thereby not only acts as a light-blocking layer, but also prevents voltage-induced collapse of the metallized membrane to the surface of the semiconductor substrate.

Claims

1. A light modulating semiconductor device comprising:

a semiconductor substrate of one conductivity type;

a layer of insulating material disposed on one surface of said substrate;

3. A light modulating semiconductor device as set forth in claim 1, wherein said first doped region of the other conductivity type extends to said one surface of said substrate.

5. A light modulating semiconductor device as set forth in claim 3, wherein said second doped region of the other conductivity type extends within said substrate beyond the perimeter of said conductive element so as to include a portion thereof underlying the space defined between said conductive member and said conductive element by virtue of the offset relationship between said conductive member and said conductive element.

6. A light modulating semiconductor device as set forth in claim 3, wherein said second doped region of the other conductivity type includes marginal portions of reduced depth as compared to the remainder of said second doped region of the other conductivity type.

8. A light modulating semiconductor device as set forth in claim 1, wherein said first doped region of the other conductivity type is disposed in said substrate in buried relationship below said one surface thereof and beneath said upwardly extending conductive member.

9. A light modulating semiconductor device as set forth in claim 1, wherein said membrane means comprises first and second metal layers and a flexible non-metallic carrier layer interposed therebetween to form a composite membrane structure.

10. A light modulating semiconductor device as set forth in claim 8, wherein the metal layer of said membrane means proximally related to said conductive member is a composite two-ply metallic layer including an uppermost back-up metal layer in engagement with said non-metallic carrier layer of said membrane means and a lower metallic layer of a metal material exhibiting resistance to oxidation and low contact resistance.

11. A light modulating semiconductor device as set forth in claim 9, wherein said non-metallic carrier layer of said membrane means is an organic polymer.

12. A light modulating semiconductor device as set forth in claim 10, wherein said carrier layer of organic polymeric material of said membrane means is nitrocellulose.

13. A light modulating semiconductor device as set forth in claim 11, wherein said first metal layer and said uppermost back-up metal layer of said membrane means are antimony and said lower metallic layer is gold.

15. A light modulating semiconductor device as set forth in claim 13, wherein said plurality of upwardly extending conductive members are arranged in an integral grid configuration having a matrix of openings provided therein in registration with said matrix of conductive elements and respectively defining the air gaps between said conductive layer of said membrane means and said conductive elements.

17. A light modulating semiconductor device as set forth in claim 13, wherein said matrix of conductive elements respectively comprise floating metallic field plate members having a thickness rendering said field plate members opaque to incident light.

18. A light modulating semiconductor device as set forth in claim 13, wherein said plurality of spaced parallel elongated doped regions of the other conductivity type respectively extend to said one surface of said substrate.

19. A light modulating semiconductor device as set forth in claim 17, further including a martrix of spaced apart second doped regions of the other conductivity type disposed in said substrate and arranged in rows and columns, said second doped regions of the other conductivity type extending to said one surface of said substrate and respectively disposed in spaced relationship to the one of said first-mentioned doped regions of the other conductivity type corresponding thereto, each of said second doped regions of the other conductivity type being respectively substantially disposed beneath said conductive element corresponding thereto and spaced therefrom by said insulating layer interposed therebetween.

20. A light modulating semiconductor device as set forth in claim 18, wherein each of said second doped regions of the other conductivity type extends within said substrate beyond the perimeter of the conductive element corresponding thereto so as to include a portion thereof underlying the space defined between the corresponding conductive member and said conductive element by virtue of the offset relationship between said conductive member and said conductive element.

21. A light modulating semiconductor device as set forth in claim 17, further including a matrix of spaced apart second doped regions of the other conductivity type disposed in said substrate arranged in rows and columns and extending to said one surface of said substrate, each of said second doped regions of the other conductivity type extending beneath the conductive element corresponding thereto and partially beneath the respective one of said conductive members into the corresponding one of said first-mentioned doped regions of the other conductivity type and having a decreased dopant concentration as compared thereto.

22. A light modulating semiconductor device as set forth in claim 17, further including a matrix of spaced apart second doped regions of the other conductivity type disposed in said substrate and extending to said one surface thereof beneath corresponding ones of said conductive elements, and each second doped regions of the other conductivity type including marginal portions of reduced depth as compared to the remainder thereof.

23. A light modulating semiconductor device as set forth in claim 13, wherein said plurality of spaced parallel elongated doped regions of the other conductivity type are disposed in said substrate in buried relationship below said one surface thereof and beneath respective ones of said upwardly extending conductive members corresponding thereto.

24. A light modulating semiconductor device as set forth in claim 22, further including a matrix of spaced apart second doped regions of the other conductivity type disposed in said substrate and extending to said one surface thereof, each of said second doped regions of the other conductivity type being substantially disposed beneath said conductive element corresponding thereto and spaced therefrom by said insulating layer interposed therebetween.

25. A light modulating semiconductor device as set forth in claim 13, wherein said membrane means comprises first and second metal layers and a flexible non-metallic carrier layer interposed therebetween to form a composite membrane structure.

26. A light modulating semiconductor device as set forth in claim 24, wherein the metal layer of said membrane means proximally related to said plurality of conductive members is a composite two-ply metallic layer including an uppermost back-up metal layer in engagement with said non-metallic carrier layer of said membrane means and a lower metallic layer of a metal material exhibiting resistance to oxidation and low contact resistance.

27. A light modulating semiconductor device as set forth in claim 25, wherein said non-metallic carrier layer of said membrane means is an organic polymer.

28. A light modulating semiconductor device as set forth in claim 26, wherein said carrier layer of organic polymeric material of said membrane means is nitrocellulose.

29. A light modulating semiconductor device as set forth in claim 27, wherein said first metal layer and said uppermost back-up metal layer of said membrane means are antimony and said lower metallic layer is gold.

2. a first doped region of the other conductivity type disposed in said substrate;

a member of conductive material disposed on said insulating layer above said first doped region of the other conductivity type and extending upwardly from said substrate;

membrane means including at least one conductive layer disposed upon said conductive member and extending across said substrate in spaced relationship with respect to said insulating layer, said membrane means having a light reflective surface exposed to incident light;

a conductive element disposed on said insulating layer and overlying said substrate in offset relationship with respect to said first doped region of the other conductivity type and said conductive member extending upwardly from said substrate;

a second doped region of the other conductivity type disposed in said substrate and extending to said one surface thereof, said second doped region of the other conductivity type being substantially disposed beneath said conductive element and spaced therefrom by said insulating layer interposed therebetween;

said conductive element being spaced from said membrane means so as to define an air gap therebetween, said conductive element and said conductive layer of said membrane means respectively serving as opposed field plates with the air gap therebetween to comprise an air gap capacitor; and

said membrane means being deflectable in a direction toward said conductive element in response to the charge placed on said air gap capacitor.

4. A light modulating semiconductor device as set forth in claim 2, wherein said second doped region of the other conductivity type is disposed in spaced relationship with respect to said first doped region of the other conductivity type.

7. A light modulating semiconductor device as set forth in claim 2, wherein said second doped region of the other conductivity type extends partially beneath said conductive member into said first doped region of the other conductivity type and has a decreased dopant concentration as compared thereto.

14. A light modulating semiconductor device comprising:

a semiconductor substrate of one conductivity type;

a layer of insulating material disposed on one surface of said substrate;

means defining a matrix array of transistors in said substrate including a plurality of spaced parallel elongated doped regions of the other conductivity type disposed in said substrate;

a plurality of conductive members respectively corresponding to said elongated doped regions of the other conductivity type and disposed on said insulating layer above the corresponding one of said plurality of parallel doped regions of the other conductivity type and extending upwardly from said substrate;

membrane means including at least one conductive layer disposed over said substrate and contacting said plurality of conductive members, said membrane means being disposed in spaced relationship with respect to said insulating layer, said membrane means having a light reflective surface and being exposed to incident light;

a matrix of spaced apart conductive elements arranged in rows and columns on said insulating layer and overlying said substrate in offset relationship with respect to said parallel elongated doped regions of the other conductivity type and respectively disposed between successive ones of said plurality of upwardly extending conductive members;

said matrix of conductive elements being spaced from said membrane means so as to define an array of air gaps therebetween in cooperation with said upwardly extending plurality of conductive members;

said conductive layer of said membrane means and said conductive elements spaced therefrom respectively serving as opposed field plates and cooperating to define a plurality of air gap capacitors addressable by said transistors; and

said membrane means being deflectable in a direction toward said plurality of conductive elements in response to the respective charges placed on the plurality of air gap capacitors.

16. A light modulating semiconductor device as defined in claim 14, further including a patterned insulating layer disposed atop said plurality of conductive members and having a configuration framing the matrix of openings provided by the integral grid configuration of said plurality of conductive members, said patterned insulating layer providing an upper level layer of insulating material, and said layer of insulating material disposed on said one surface of said substrate providing a lower level layer of insulating material;

conductive contact members disposed upon said upper level layer of insulating material and respectively overlying said plurality of conductive members; and

said at least one conductive layer of said membrane means engaging said contact members of said plurality of conductive members.

30. A spatial light modulator comprising:

a semiconductor substrate of one conductivity type;

means defining a matrix array of air gap capacitors arranged in a plurality of rows and columns and disposed on one surface of said semiconductor substrate;

charge-coupled device delay line means connected to one row or column of said matrix array of air gap capacitors for providing simultaneous signal inputs to each of the air gap capacitors arranged in one column or row of the matrix array;

decoder means connected to a plurality of air gap capacitors included in the other of a row or column of said matrix array and operable to select one line of said air gap capacitors at a time for readout; and

said air gap capacitors being defined at least in part by membrane means having at least one conductive layer and disposed above said semiconductor substrate in spaced relationship thereto and by a plurality of spaced apart conductive elements disposed on said semiconductor substrate in spaced relationship with respect to said membrane means.

32. A line-addressed spatial light modulator structure as set forth in claim 30, wherein said analog delay line means comprises first and second analog delay lines for alternately providing input signals to alternate lines of said address transistors such that even data bits of the input signal are received by one group of said address transistors via said first analog delay line and odd data bits of the input signal are received by the other group of said address transistors via said second analog delay line.

34. The modulator of claim 32, further comprising a plurality of respective field plates, one of said field plates being located atop said substrate and beneath said membrane at each of said respective pixel locations.

35. The modulator of claim 32, 33, wherein said membrane is continuous over said array of pixel locations, and is conductive and grounded.

36. The modulator of claim 34, wherein said membrane comprises nitrocellulose.

37. The modulator of claim 35, wherein said membrane further comprises:

a first metallization layer, comprising a metal having high reflectivity; and

a second layer of metal having a high conductivity.

31. A line-addressed spatial light modulator structure comprising:

a semiconductor substrate of one conductivity type;

means defining a matrix array of air gap capacitors disposed on one surface of said semiconductor substrate, said air gap capacitor-defining means including membrane means having at least one conductive layer and disposed in spaced relationship to said substrate wherein said conductive layer serves as field plates of said matrix array of air gap capacitors, and a plurality of conductive elements disposed on said substrate in insulated relationship thereto and in spaced relationship to said membrane means for forming the other field plates of the respective air gap capacitors included in said matrix array;

means defining in said substrate a plurality of field effect address transistors corresponding to respective air gap capacitors and adapted to electronically address said air gap capacitors upon being rendered conductive, said address transistors including drain regions of the other conductivity type disposed in said semiconductor substrate and being common to all of said address transistors comprising respective lines;

line driver circuitry means operably connected to said drain regions of said address transistors;

analog delay line means connected to said line driver means for providing input signals to said address transistors;

said address transistors having respective gate electrodes defining horizontal lines in said matrix array; and

decoder means connected to said gate electrodes of said address transistors.

33. An optical modulator comprising:

a semiconductor substrate;

an array of charge-storing locations within said semiconductor substrate, each said charge-storing location comprising means for capacitatively storing charge;

a grounded flexible membrane supported parallel to and above and spaced apart from said semiconductor substrate, the locations of said charge-storing locations defining pixel locations within said flexible membrane; and

an array of address transistors, each connected to a respective of one of said charge-storing locations, said address transistors being selectively addressable to selectively store charge in the corresponding one of said charge-storing locations, each said address transistor comprising a channel region within said substrate which is below and proximate to said corresponding pixel of said flexible membrane, said flexible membrane being entirely continuous above said array of charge-storing locations and said array of address transistors.

38. The modulator of claim 33, wherein the space between said membrane and said field plate is less than the maximum elastic deformation of said membrane above said respective field plate.

40. The modulator of claim 38, further comprising a plurality of respective field plates, one of said field plates being located atop said substrate and beneath said membrane at each of said respective pixel locations.

43. The modulator of claim 38, 39, or 40, wherein said membrane is continuous over said array of pixel locations, and is conductive and grounded.

39. An optical modulator comprising:

a semiconductor substrate;

a plurality of gate lines located on said substrate and protruding above said substrate, each said gate line defining a column of pixel locations;

a plurality of conductive row lines within said substrate, each said row line defining a row of pixel locations;

a reflective, flexible, and conductive membrane positioned on said gate lines; and

a plurality of charge-storing locations located at respective pixel locations at intersections of rows and columns defined by said gate lines and said row lines, each said charge-storing location defining and corresponding to a pixel location of said membrane above said location, each said charge-storing location comprising means for capacitatively storing charge;

whereby each said respective charge-storing location is selectively addressable by one of said gate lines and one of said row lines to store charge therein.

41. The modulator of claim 39, wherein said field plate and said respective gate lines are insulated from said substrate by a gate insulator layer.

44. The modulators of claim 41, 39, or 40, wherein the space between said membrane and said field plate is less than the maximum elastic deformation of said membrane above said respective field plate.

42. An optical modulator, comprising:

a semiconductor substrate, having a first conductivity type;

a gate insulator on said substrate;

a plurality of conductive field plates on said gate insulator, said plurality of field plates defining a matrix of pixel locations;

a plurality of row lines, comprising elongated regions of second conductivity type near the surface of said substrate;

a plurality of second-conductivity-type charge-storing-locations, respectively located beneath each said field plate, each said charge-storing-location defining a channel region with respect to exactly one adjacent row line, each said charge-storing location comprising means for capacitatively storing charge;

a plurality of conductive gate regions, said conductive gate regions being elongated to form column lines orthogonal to said row lines, each said channel region being located beneath a portion of one of said gates;

an insulating cap on said gates; and

a membrane structure on said insulating cap, said membrane structure being flexible and including reflective and conductive layers.