Magnetron sputtering apparatus

• US 4,441,974 A
• Filed: 04/28/1983
• Issued: 04/10/1984
• Est. Priority Date: 04/30/1982
• Status: Expired due to Term

• Current Assignee: Shibaura Engineering Works Co., Ltd. (Shibaura Mechatronics Corporation)
• Original Assignee: Tokuda Seisakusho, Ltd., Tokyo Shibaura Denki Kabushiki Kaisha
• Inventors: Nishikawa, Reiji, Jyo, Hidetaka, Ito, Yoshinori, Satoyama, Shozo
• Primary Examiner(s): Demers, Arthur P.
• Application Number:
  US06/489,593
• Time in Patent Office: 348 Days
• Field of Search: 204/298, 204/192 R
• US Class Current: 204/192.12
• CPC Class Codes: H01J 37/3405 Magnetron sputtering

Abstract

There is disclosed a magnetron sputtering apparatus including a sputtering chamber, a substrate and target disposed within the sputtering chamber to form a desired space therebetween, device for applying a voltage between the substrate and target, and device for producing a magnetic field; and the apparatus comprises the magnetic field-producing device adapted to excite a magnetic field so that the direction of the magnetic field may be inverted on the magnetic symmetry axis within the space.

The magnetron sputtering apparatus of the present invention can form metal films having no crack without heating of the substrate and also form a magnetic recording film layer having an increased coercive force perpendicular to the surface of the film.

Claims

1. A magnetron sputtering apparatus comprising a sputtering chamber;

a substrate and target disposed within said sputtering chamber to form a desired space therebetween;

means for applying a voltage between said substrate and target; and

means for producing a magnetic field so that the direction of the magnetic field is inverted on the magnetic symmetry axis within said space.

2. A magnetron sputtering apparatus according to claim 1, wherein said magnetic field-producing means includes a combination of permanent magnets which are located on the back of said target.

3. A magnetron sputtering apparatus according to claim 1, wherein said magnetic field-producing means includes a combination of permanent magnets on the back of said target with a yoke.

4. A magnetron sputtering apparatus according to claim 3, wherein said yoke includes a central protrusion extending toward the back of said target, said permanent magnets being disposed around said central protrusion of said yoke with one pole in each of said permanent magnets being faced to the back of said target.

5. A magnetron sputtering apparatus according to claim 2, wherein solenoid coils are disposed around said permanent magnets for producing another magnetic field intersecting said magnetic field produced by said permanent magnets at right angle.

6. A magnetron sputtering apparatus according to claim 1, further including means for continuously carrying a flexible substrate.

7. A magnetron sputtering apparatus according to claim 1, further including means for sputtering said substrate at the opposite faces thereof at the same time.

8. A magnetron sputtering apparatus according to claim 1, wherein said target is made of a material containing chief components of Co and Cr.

15. A magnetron sputtering apparatus according to claim 1, wherein said apparatus is used for a preparation of vertical type magnetic recording media.

9. A magnetron sputtering apparatus comprising:

a sputtering chamber;

a substrate and target disposed within said sputtering chamber to form a desired space therebetween;

means for applying a voltage between said substrate and target, and

means for producing a magnetic field;

said apparatus being characterized in that said magnetic field-producing means is adapted to excite a magnetic field so that the direction of the magnetic field may be inverted on the magnetic symmetry axis within said space;

said magnetic-field producing means includes a combination of permanent magnets which are located on the back of said target;

said combination of permanent magnets includes a first permanent magnet having the south or north pole thereof faced to said target and a plurality of second permanent magnets having substantially the same magnetic property as that of said first permanent magnet, said second permanent magnets being disposed around said first permanent magnet and positioned with the magnet pole opposite to that of said first permanent magnet being faced to said target.

10. A magnetron sputtering apparatus according to claim 9, wherein a ratio of the total sectional area S₂ of said second magnets parallel to said target to the sectional area S₁ of said first magnet parallel to said target (S₂ /S₁) is three or more.

11. A magnetron sputtering apparatus according to claim 9, wherein said magnetic field-producing means includes a combination of permanent magnets on the back of said target with a yoke.

12. A magnetron sputtering apparatus according to claim 11, wherein said yoke includes a central protrusion extending toward the back of said target, said permanent magnets being disposed around said central protrusion of said yoke with one pole in each of said permanent magnets being faced to the back of said target.

13. A magnetrong sputtering apparatus according to claim 9, wherein solenoid coils are disposed around said permanent magnets for producing another magnetic field intersecting said magnetic field produced by said permanent magnets at right angle.

14. A magnetron sputtering apparatus according to claim 12, wherein solenoid coils are disposed around said permanent magnets for producing another magnetic field intersecting said magnetic field produced by said permanent magnets at right angle.

16. A method for forming a magnetic thin film on the surface of a substrate by magnetron sputtering, said method comprising the steps of:

disposing the substrate and target within a sputtering chamber to form a desired space therebetween;

supplying a voltage between said substrate and target; and

forming a magnetic field so that the direction of the magnetic field is inverted on the magnetic symmetry axis within said space.