Photoelectrochemical cells for conversion of solar energy to electricity and methods of their manufacture

• US 4,442,185 A
• Filed: 06/09/1982
• Issued: 04/10/1984
• Est. Priority Date: 10/19/1981
• Status: Expired due to Fees

• Current Assignee: Associated Universities, Inc.
• Original Assignee: United States Department of Energy (Government of the United States of America)
• Inventors: Skotheim, Terje
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US06/386,666
• Time in Patent Office: 671 Days
• Field of Search: 429/111
• US Class Current: 429/111
• CPC Class Codes: H01G 9/20 Light-sensitive devices
• CPC Class Codes: H01M 14/005 Photoelectrochemical storage cells light sensitive devices H01G9/20, semiconductors sensitive to light H01L31/00

Abstract

A photoelectric device is disclosed which comprises first and second layers of semiconductive material, each of a different bandgap, with a layer of dry solid polymer electrolyte disposed between the two semiconductor layers. A layer of a polymer blend of a highly conductive polymer and a solid polymer electrolyte is further interposed between the dry solid polymer electrolyte and the first semiconductor layer. A method of manufacturing such devices is also disclosed.

Claims

1. A photoelectric device comprising:

(a) a first layer of semiconductive material having a first band gap;

(b) a second layer of semiconductor material having a different band gap or of a metal;

(c) a layer of dry solid polymer electrolyte between said first and second layers; and

(d) a layer of a polymer blend of a highly conductive polymer and a solid polymer electrolyte between said dry solid polymer electrolyte and said first layer.

2. A device according to claim 1, wherein said first layer is selected from the group of single crystal silicon, amorphous silicon, polycrystalline silicon, CdSe, CdTe, or CdS.

3. A device according to claim 1, wherein said second layer is a layer of semiconductive material.

4. A device according to claim 1, wherein said second layer is a transparent counter electrode of a metal or metal oxide on a transparent substrate and is selected from the group comprising indium-tin oxide, platinum, chromium, and indium-tin oxide coated with platinum.

5. A device according to any one of claims 3 or 4, further comprising a second layer of polymer blend of a highly conductive polymer and a solid polymer electrolyte between said dry solid polymer electrolyte and said second layer of material.

6. A device according to claim 1, wherein said polymer blend layer is in the range of 100 to 1000 angstroms thick.

7. A device according to claim 1, wherein said dry solid polymer electrolyte is less than 10,000 angstroms thick.

8. A device according to claim 1, wherein said polymer layers are in the range of 1.0 to 0.01 micrometers thick.

9. A device according to claim 1, wherein said polymer blend layer is at least 0.005 micrometers thick and said polymer electrolyte layer is up to 10 times thicker.

10. A device according to any one of claims 1, or 2, or 3, wherein said highly conductive polymer in said blend is selected from the group comprising polyindole, polyazulene, polythiophene, or polyfuran;

and said solid polymer electrolyte in said blend is selected from the group comprising polyethylene oxide and polypropylene oxide.

11. A device according to claim 10, wherein said dry solid polymer electrolyte is polyethylene oxide complexed with potassium iodide or sodium iodide;

or polypropylene oxide complexed with potassium iodide or sodium iodide.