Photoresist curing method

• US 4,443,533 A
• Filed: 07/23/1982
• Issued: 04/17/1984
• Est. Priority Date: 07/23/1982
• Status: Expired due to Term

• Current Assignee: Xenon Corporation
• Original Assignee: Xenon Corporation
• Inventors: Panico, C. Richard
• Primary Examiner(s): Kittle, John E.
• Assistant Examiner(s): Dees, Jose G.
• Application Number:
  US06/401,318
• Time in Patent Office: 634 Days
• Field of Search: 430/311, 430/313, 430/314, 430/328, 430/394, 204/155, 204/159.11, 250/341, 250/492.1
• US Class Current: 430/311
• CPC Class Codes: B01J 19/087 employing electric or magnetic energy
• CPC Class Codes: B01J 19/123 Ultraviolet light
• CPC Class Codes: B05D 3/06 by exposure to radiation B05D3/02 takes precedence ; plasma treatment B05D3/141
• CPC Class Codes: G03F 7/2024 of the already developed image

Abstract

A method of post-development cure of photoresists is described wherein the substrate carrying the developed photoresist is positioned within 6.0 cm of a flash lamp and flashed with visible light to effect a cure in 30 seconds or less.

Claims

1. In a method of forming optically delineated circuits comprising applying a photoresist to a substrate;

exposing said photoresist to a photoexposure of a circuit pattern;

developing said photoresist by washing away the unexposed portions;

curing the remaining photoresist; and

treating the exposed substrate surface to provide electrical circuits, the combination of step to produce said curing comprising;

(a) positioning said substrate so that the surface of the remaining photoresist is spaced in the range of 6.0 mm to 6.0 cm from the envelope of a flash arc lamp; and

,

(b) discharging at least one electrical pulse through said lamp with a current density in said lamp in the range of 400 to 2000 amperes per square centimeter.

2. In the method according to claim 1, the combination wherein said discharging is at the rate of one to ten pulses per second.

3. In the method according to claim 2, the combination wherein said discharging takes place over a time interval of one-half second to thirty seconds.

4. In the method according to claim 1, the combination wherein said lamp is filled with xenon gas and the fill pressure of said gas and the pulse length at which the lamp is operated are designed to emphasize output radiation in the visible spectrum with wavelengths longer than 300 nanometers.

5. In the method according to claim 1, the combination wherein said substrate is circular and said lamp is shaped in a flat spiral.

6. In a method according to claim 1, wherein said applying comprises applying a photoresist to a wafer of semiconductor crystal and said exposing comprises exposing said photoresist to a photoexposure of iterated integrated circuit patterns.