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Memory device

  • US 4,445,204 A
  • Filed: 10/05/1981
  • Issued: 04/24/1984
  • Est. Priority Date: 10/03/1980
  • Status: Expired due to Term
First Claim
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1. A memory device comprising a plurality of memory cells, means for receiving address signals, means for selecting at least one of the memory cells in accordance with said address signals, means for receiving an access request signal, at least one output terminal, means responsive to said access request signal for producing read-out signal from the selected memory cell after its operation period, means for receiving a chain of clock signals, digital delay means including a plurality of bit stages, means for applying said access request signal to said digital delay means, means for applying said clock signals to said digital delay means, said digital delay means sequentially energizing said plurality of bit stages one by one in accordance with the increase of number of said clock signals applied thereto after receipt of said access request signal, programmable means having a plurality of input lines each receiving a signal from the associated bit stage of said digital delay means, an output line intersecting with said input lines and a plurality of programmable elements disposed at the intersections of said input lines, each of said programmable elements being capable of taking one of a first state for electrically isolating said output line and the associated input line and a second state for providing an electric path between said output line and the associated input line, and means for generating a ready signal when said output line is energized after the receipt of said access request signal, whereby said ready signal is produced through a desired period defined by the bit stage of said digital delay means associated to the input line coupled to the programmable element made in said second state from the time point of the receipt of said access request signal.

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