MIS Device including a substrate bias generating circuit
First Claim
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1. A MIS device including a substrate bias generating circuit for absorbing charges in a semiconductor substrate thereof, comprising:
- a bias circuit, connected to said semiconductor substrate, which performs charging and discharging operations upon said semiconductor substrate in accordance with clock signals so as to absorb said charges in said semiconductor substrate, anda clamp circuit connected between said semiconductor substrate and a predetermined reference power supply,the conductance of said clamp circuit being determined so as to satisfy ISS >
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IBB where IBB is a substrate current and ISS is a current flowing through said clamp circuit.
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Abstract
A MIS device including a substrate bias generating circuit comprising: an oscillating circuit for generating clock signals; a pumping circuit comprised of a charging and discharging circuit and a bias circuit, for absorbing charges in a semiconductor substrate, and; a clamp circuit for clamping the potential of the substrate at a desired level.
12 Citations
1 Claim
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1. A MIS device including a substrate bias generating circuit for absorbing charges in a semiconductor substrate thereof, comprising:
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a bias circuit, connected to said semiconductor substrate, which performs charging and discharging operations upon said semiconductor substrate in accordance with clock signals so as to absorb said charges in said semiconductor substrate, and a clamp circuit connected between said semiconductor substrate and a predetermined reference power supply, the conductance of said clamp circuit being determined so as to satisfy ISS >
>
IBB where IBB is a substrate current and ISS is a current flowing through said clamp circuit.
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Specification
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Current AssigneeFujitsu Limited
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Original AssigneeFujitsu Limited
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InventorsTaira, Shigenobu
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Primary Examiner(s)Miller, Stanley D.
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Assistant Examiner(s)Davis, B. P.
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Application NumberUS06/457,026Time in Patent Office477 DaysField of Search307/297, 307/304, 307/303, 307/453, 307/540, 307/296 R, 352/41US Class Current327/537CPC Class CodesG05F 3/205 Substrate bias-voltage gene...H01L 27/0222 Charge pumping, substrate b...
