Method for fabricating MNOS structures utilizing hydrogen ion implantation

• US 4,447,272 A
• Filed: 11/22/1982
• Issued: 05/08/1984
• Est. Priority Date: 11/22/1982
• Status: Expired due to Fees

• Current Assignee: the united states of america as represented by the secretary of the navy
• Original Assignee: the united states of america as represented by the secretary of the navy
• Inventors: Saks, Nelson S.
• Primary Examiner(s): Roy, Upendra
• Application Number:
  US06/443,828
• Time in Patent Office: 533 Days
• Field of Search: 148/1.5, 148/187, 29/571, 29/576 B, 29/576 T, 357/91
• US Class Current: 438/287
• CPC Class Codes: H01L 29/40117 the electrodes comprising a charge-trapping insulator
• CPC Class Codes: H01L 29/66833 with a charge trapping gate insulator, e.g. MNOS transistors
• CPC Class Codes: Y10S 438/91 Controlling charging state at semiconductor-insulator interface

Abstract

An improved method for reducing the density of electronic trapping states and fixed insulator charge in the thin oxide layer of an MNOS structure. The method includes the steps of implanting hydrogen ions in field region of the oxide layer and annealing the MNOS structure at 400° C. to cause the ions to diffuse laterally into the gate region of the oxide layer.

Claims

1. An improved method for reducing the density of electronic trapping states and fixed insulator charge in the oxide layer of an MNOS structure of the type having a gate, said oxide layer including a gate region disposed below the gate, and a field region surrounding said gate region, said method comprising the steps of:

implanting hydrogen ions in the MNOS structure such that the gate blocks the hydrogen implant from the gate region of the oxide layer, the field region of the oxide layer of the MNOS structure thereby being implanted with hydrogen ions; and

annealing the MNOS structure to cause said implanted hydrogen ions in the field region of the oxide layer to diffuse laterally into the gate region of the oxide layer and to chemically react at the Si--SiO₂ interface to reduce the density of electronic trapping states and fixed oxide charge.

2. The method recited in claim 1 wherein:

the step is implanting hydrogen ions is terminated when the fluence of hydrogen ions in the oxide layer is in the range of from about 10¹⁵ ions/cm² to about 10¹⁶ ions/cm².

3. The method recited in claim 2 wherein:

said step of implanting hydrogen ions includes adjusting the energy of said hydrogen ions so that the peak of the implanted hydrogen profile is in oxide layer.

4. The method recited in claim 1 wherein:

said step of annealing includes heating the MNOS structure to a temperature of about 400°

C.

5. The method recited in claim 3 wherein:

said step of annealing includes heating the MNOS structure to a temperature of about 400°

C.

6. An improved method for reducing the density of electronic trapping states and fixed insulator charge in the oxide layer of an MNOS structure of the type with a continuous nitride layer disposed over the oxide layer, said nitride layer having a gate formed on its upper surface, and wherein said oxide layer includes a gate region disposed below the gate, and a field region surrounding said gate region, said method including the steps of:

implanting the oxide layer with hydrogen ions such that the gate blocks the hydrogen implant from the gate region of the oxide layer;

adjusting the energy of said ions to cause the peak of the implanted hydrogen ions to be positioned in the oxide layer;

terminating said step of implanting when the fluence of hydrogen ions in the oxide layer is from about 10¹⁵ ions/cm² to 10¹⁶ ions/cm² ;

heating the MNOS structure to about 400°

C. for about 1 to about 2 hours.

7. The method recited in claim 6 wherein:

the gate region of the oxide layer of the MNOS structure is about 90 Angstroms thick;

the nitride layer of the MNOS structure is about 750 Angstroms thick; and

the gate of the MNOS structure is formed from polysilicon and is about 5,000 Angstroms thick.

8. The method recited in claim 7 wherein:

said implanting step utilizes hydrogen atoms with energies insufficient to penetrate the gate.

9. An improved method for reducing the density of electronic trapping states and fixed insulator charge in the oxide layer of an MNOS structure of the type having a gate, said oxide layer including a gate region disposed below the gate, and a field region surrounding said gate region, said method comprising the steps of:

implanting hydrogen ions solely in the field region of the oxide layer of the MNOS structure, such that no hydrogen ions are implanted in the gate region; and

annealing the MNOS structure to cause said implanted hydrogen ions in the field region of the oxide layer to diffuse laterally into the gate region of the oxide layer and to chemically react at the Si--SiO₂ interface to reduce the density of electronic trapping states and fixed oxide charge.