Waveform generating apparatus

• US 4,447,747 A
• Filed: 03/02/1981
• Issued: 05/08/1984
• Est. Priority Date: 03/02/1981
• Status: Expired due to Fees

• Current Assignee: GTE Laboratories Incorporated (Lumen Technologies, Inc.)
• Original Assignee: GTE Laboratories Incorporated (Lumen Technologies, Inc.)
• Inventors: LaPotin, David P.
• Primary Examiner(s): LARKINS, WILLIAM
• Application Number:
  US06/239,779
• Time in Patent Office: 1,163 Days
• Field of Search: 338/323, 338/325, 338/89, 338/200, 357/51, 357/20, 357/41, 307/529, 340/347 DA
• US Class Current: 327/105
• CPC Class Codes: H01L 27/0802 Resistors only
• CPC Class Codes: H03K 4/026 using digital techniques

Abstract

Waveform generating apparatus for synthesizing a non-linear waveform by sampling voltage levels along a series string of resistances. The series string of resistances is a linear resistance fabricated in a monolithic integrated circuit structure and includes a series of contiguous resistance elements of approximately the same physical configuration and of approximately equal resistance value. Each resistance element has a projection or nub. Particular ones of the nubs serve as source regions for MOS switching transistors at the sampling point. The intervening nubs are unconnected. The symmetry of the structure compensates for errors otherwise introduced by the presence of source region nubs at sampling points spaced in a non-linear relationship.

Claims

1. Monolithic integrated circuit structure comprising

a body of semiconductor material having a region of one conductivity type;

a linear resistance of semiconductor material of the opposite conductivity type inset in said region of the one conductivity type;

said linear resistance being a series of contiguous resistance elements of approximately the same physical configuration and of approximately equal resistance value;

each resistance element including a projection of semiconductor material of the opposite conductivity type protruding into said region of the one conductivity type;

a plurality of sectors of semiconductor material of the opposite conductivity type inset in said region of the one conductivity type, the number of sectors being less than the number of resistance elements, said sectors being adjacent to but spaced from the projections of particular ones of said resistance elements; and

each sector and the projection adjacent thereto forming the drain and source regions, and the portion of the region of the one conductivity type therebetween forming the channel region of an MOS transistor;

wherein

the particular ones of said resistance elements are spaced from each other by sets of intervening resistance elements; and

the resistances of the sets of intervening resistance elements have a non-linear relationship, each of the intervening resistance elements of at least one of the sets being at least about 3 percent larger in resistance than each of the intervening resistance elements of at least another of the sets.

2. Monolithic integrated circuit structure in accordance with claim 1 including

a layer of an adherent nonconductive material overlying the portion of the region of the one conductivity type between each of said sectors of the opposite conductivity type and the projection of each of said particular ones of the resistance elements;

and

a layer of conductive material overlying each of said layers of nonconductive material to provide the gate electrode of each of said MOS transistors.

3. Monolithic integrated circuit structure in accordance with claim 2 including

an electrical contact to each of said sectors of the opposite conductivity type.

4. Monolithic integrated circuit structure in accordance with claim 3 wherein

said linear resistance is an elongated diffused region having two opposed generally parallel side edges;

and

each of said projections extends from one of the side edges of the linear resistance at the central portion of the one of the side edges of the resistance element.

5. Waveform generating apparatus including

monolithic integrated circuit structure in accordance with claim 3;

means for coupling a first source of potential to the linear resistance at one end thereof and for coupling a second source of potential to the linear resistance at the opposite end thereof whereby voltages of predetermined value are established at the projections of the particular ones of the resistance elements;

high input impedance buffer means having its input connected to the electrical contacts to said sectors; and

clock means coupled to the gate electrode of each of said MOS transistors for causing each of said MOS transistors to operate in a low impedance condition in a predetermined recurring sequence whereby a predetermined succession of voltages is produced at the output of the buffer means.

6. Waveform generating apparatus in accordance with claim 5 including

low pass filter means coupled to the output of said buffer means for producing a continuous, smoothed periodic waveform from the predetermined succession of voltages at the output of the buffer means.