Cathode arrangement for sputtering material from a target in a cathode sputtering unit

• US 4,448,653 A
• Filed: 10/30/1981
• Issued: 05/15/1984
• Est. Priority Date: 10/14/1980
• Status: Expired due to Fees

• Current Assignee: Balzers Aktiengesellschaft (OC Oerlikon Corporation AG)
• Original Assignee: Balzers Aktiengesellschaft (OC Oerlikon Corporation AG)
• Inventors: Wegmann, Urs
• Primary Examiner(s): Demers, Arthur P.
• Application Number:
  US06/311,267
• Time in Patent Office: 928 Days
• Field of Search: 204/298, 204/192 R
• US Class Current: 204/298.12
• CPC Class Codes: H01J 37/3408 Planar magnetron sputtering
• CPC Class Codes: H01J 37/3426 Material

Abstract

A cathode arrangement for sputtering material from a target in a cathode sputtering unit comprises a frame-shape magnet disposed adjacent the target and remote from the surface to be sputtered and another magnet located within the frame-shape magnet. The directions of magnetization of the two magnets form an angle of from 45 to 90 degrees. The frame-shape magnet is made of a permanent magnet material having an energy density of at least 40 kJ per m³. The other magnet is made of a permanent magnet material having an energy density of less than 40 kJ per m³.

Claims

1. A cathode arrangement for sputtering material from a target in a cathode sputtering unit, comprising a frame-shape magnet being disposed adjacent the target remote from the surface to be sputtered, and another magnet being provided within said frame-shap magnet, and with the directions of magnetization of the two magnets forming an angle of between 45°

and 90°

, said frame-shape magnet being made of a permanent-magnet mterial having an energy density of at least 40 kJ per m³ and the other magnet being made of a permanent-magnet material having an energy density of less than 40 kJ per m³.

2. A cathode arrangement according to claim 1, wherein said energy content difference between the materials of said frame-shape magnet and said another magnet is at least 10 kJ per m³.

3. A cathode arrangement according to claim 1, including an additional magnet disposed centrally of said frame-shape magnet having an energy density of more than 40 kJ per m³.

4. A cathode arrangement according to claim 1, wherein said frame-shape magnet comprises a magnet of high-energy material, said another magnet comprising a magnet of low-energy material and they form magnetization directions which are at an angle of 90°

in respect to each other.

5. A cathode arrangement according to claim 1, wherein said frame-shape magnet and said another magnet are mounted for movement relative to the target.

6. A cathode arrangement according to claim 1, including a support structure, a housing for said support structure in which said support structure is located having a top opening, said frame-shape magnet and said another magnet being mounted on said support structure below the top opening, the target plate positioned on said support structure above said cathode arrangement.

7. A cathode arrangement according to claim 6, including means for mounting said support structure at a spaced location from the interior of said housing.

8. A cathode arrangement according to claim 6, including a cooling plate mounted over said cathode arrangement and supporting said target.

9. A cathode arrangement according to claim 1, wherein said frame-shape magnet comprises an annular member, said another magnet being annular in form, and a tube comprising a material to be sputtered positioned around said annular member.

10. A cathode arrangement according to claim 1, wherein said target is a tube, said magnet and said another magnet being positioned around said tube.