Shadow projection mask for ion implantation and ion beam lithography

• US 4,448,865 A
• Filed: 10/12/1982
• Issued: 05/15/1984
• Est. Priority Date: 10/30/1981
• Status: Expired due to Term

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Greschner, Johann, Nehmiz, Peter, Bohlen, Harald
• Primary Examiner(s): Kittle, John E.
• Assistant Examiner(s): Dees, Jose G.
• Application Number:
  US06/434,074
• Time in Patent Office: 581 Days
• Field of Search: 430/5, 430/323, 430/321, 430/322, 430/313, 156/643, 427/38, 428/137, 428/210
• US Class Current: 430/5
• CPC Class Codes: G03F 1/20 Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
• CPC Class Codes: H01L 21/266 using masks H01L21/26586 takes precedence

Abstract

A projection mask comprises a thin P⁺ -doped silicon layer with through holes adapted to the mask pattern, a grid supporting this layer having silicon ribs. On at least on its side facing away from the grid, the layer has a layer, which is at least as thick as to prevent the implanting of ions in the silicon layer. At least the mask surface exposed to ion irradiation is electrically and thermally conductive, and mechanically resistant. The coating of the silicon frame of the mask is such that it does not cause any mask deformation caused by temperature and/or through inherent tensions of the coating. Preferred absorbing materials are gold, silver, platinum, tungsten, and tantalum, and mechanically resistant materials are preferably carbon, molybdenum, titanium, tungsten, and tantalum. In operation, the mask with grid is placed onto the substrate to be irradiated, and subsequently blanket-illuminated with an ion beam, or scanned line-by-line until each point on the mask has been covered by the beam path.

Claims

1. A projection mask comprising;

a thin P⁺ -doped silicon layer having through holes adapted to the mask pattern, a grid supporting said silicon layer in areas where holes are not present, said grid comprising silicon ribs doped differently from the silicon layer and having on at least an upper side facing away from the grid an ion-absorbing layer, said grid on at least the surface exposed to ion radiation being electrically and thermally conductive, said silicon layer and said grid defining a silicon frame, a coating disposed on said frame where it is to be exposed to the ion beams having at least such a thickness, taking into consideration the ion energy and the characteristics of the covering material, preventing ion penetration into the silicon, said mask surface exposed to the ion radiation comprising a material resistant to the ion attack, and said silicon frame coating not causing mask deformation due to temperature and/or inherent tensions of the coating.

2. A projection mask as claimed in claim 1, wherein the frame lower side with the grid is provided with a coating.

3. A projection mask as claimed in claim 2, wherein the coating on the lower side is substantially identical with the coating on the upper side.

4. A projection mask as claimed in claim 1, further comprising a diffusion barrier on one side of the P⁺ -silicon layer for protection against penetrating ions and atoms of the ion-absorbing layer.

5. A projection mask as claimed in claim 4, wherein said ion-absorbing layer is a material selected from the group consisting of gold, silver, tungsten, platinum, and tantalum, and said ion-resistant material is selected from the group consisting of carbon, molybdenum, tungsten, tantalum, and titanium, and said material for the diffusion barrier is Si₃ N₄.

6. A projection mask as claimed in claim 5, further comprising a layer of a material both absorbing and mechanically resistant applied on said silicon frame.

7. A projection mask as claimed in claim 6, wherein the layer applied on said silicon frame is selected from the group consisting of tantalum or tungsten.

8. A projection mask as claimed in claim 5, wherein on the silicon frame a layer of gold, and on the gold layer a layer of molybdenum are applied.

9. A projection mask as claimed in claim 5, wherein at least the silicon frame side facing ion irradiation is covered with a layer of gold, and a superimposed layer of carbon.

10. A projection mask as claimed in claim 9, wherein on the upper side of the frame said gold layer is in the range of approximately between 0.2 and approximately 0.6 μ

m thick, the carbon layer is in the order of 0.1 μ

m thick, and the thickness of the layers on the walls of the holes in the silicon layer is thinner approximately by a factor of 3 than the thickness of the layers on the upper side of the frame.

11. A projection mask as claimed in any one of claims 1, 2, 4, 5, 9 and 10, wherein the coating on the upper side of the frame and on the hole walls comprises a gold layer, a carbon layer and a diffusion barrier, and said gold layer and the diffusion barrier also extend over the lower side of the frame.

12. A projection mask as claimed in claims 1, 2 or 3, wherein said ion-absorbing layer is a material selected from the group consisting of gold, silver, tungsten, platinum, and tantalum and said ion-resistant material is selected from the group consisting of carbon, molybdenum, tungsten, tantalum and titanium.

13. A projection mask as claimed in claims 2 or 3, further comprising a diffusion barrier on one side of the P⁺ -silicon layer for protection against penetrating ions and atoms of the ion-absorbing layer.