Method for producing a semiconductor layer solar cell

• US 4,449,286 A
• Filed: 10/27/1981
• Issued: 05/22/1984
• Est. Priority Date: 10/17/1979
• Status: Expired due to Fees

• Current Assignee: Licentia Patent-Verwaltungs-GmbH (AB Electrolux)
• Original Assignee: Licentia Patent-Verwaltungs-GmbH (AB Electrolux)
• Inventors: Dahlberg, Reinhard
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US06/315,641
• Time in Patent Office: 938 Days
• Field of Search: 29/572, 427/34, 427/74, 427/86, 136/255, 136/256, 136/258 PC, 136/258 AM, 136/261, 357/15, 357/30, 148/1.5, 148/174, 219/121 PL, 219/121 PY
• US Class Current: 438/85
• CPC Class Codes: C23C 4/04 characterised by the coating material
• CPC Class Codes: H01L 31/022425 for solar cells
• CPC Class Codes: H01L 31/03921 including only elements of Group IV of the Periodic Table
• CPC Class Codes: H01L 31/0547 comprising light concentrating means of the reflecting type, e.g. parabolic mirrors, concentrators using total internal reflection
• CPC Class Codes: H01L 31/182 Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
• CPC Class Codes: Y02E 10/52 PV systems with concentrators
• CPC Class Codes: Y02E 10/546 Polycrystalline silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

A method for producing a semiconductor solar cell in which a layer of semiconductor material is applied to a substrate by means of plasma spraying. The energy density in the plasma zone is maintained sufficiently high that the semiconductor vaporizes and is brought out of the plasma zone in the form of a vapor jet, which is condensed on the substrate in the form of a semiconductor layer.

Claims

1. In a method for producing a semiconductor layer solar cell by applying a semiconductor layer to a substrate by plasma spraying, in which a semiconductor material is brought out of the plasma zone of the plasma spraying means, the improvement comprising maintaining the energy density in the plasma zone sufficiently high such that the semiconductor vaporizes and is brought out of the plasma zone in the form of a vapor jet, and condensing the vapor jet on the substrate in the form of a semiconductor layer.

2. Method as defined in claim 1, wherein the substrate on which the vapor jet is condensed is disposed in a vacuum.

3. Method as defined in claim 1, wherein the plasma spraying means comprises two electrodes made of semiconductor material.

4. Method as defined in claim 1, wherein the semiconductor material is introduced into the plasma zone in the form of a powder.

5. Method as defined in claim 1, wherein the semiconductor material is introduced into the plasma zone in the form of a rod which extends into the plasma zone, wherein the end of the rod melts in the plasma zone and vaporizes.

6. Method as defined in claim 1, wherein the plasma spraying means includes electrodes made of a semiconductor material which vaporizes in the plasma, and is condensed on the substrate.

7. Method as defined in claim 1, wherein the plasma spraying means includes a carrier gas comprising oxygen-free hydrogen or nitrogen or noble gas, or a mixture thereof.

8. Method as defined in claim 1, wherein the plasma of the plasma spraying spraying means burns only in the vapor of the semiconductor material.

9. Method as defined in claim 1, wherein the plasma spraying means is water-stabilized and the plasma burns in dissociated water vapor with an excess of hydrogen.

10. Method as defined in claim 1, wherein the substrate comprises an electrically conductive material.

11. Method as defined in claim 1, wherein the substrate comprises an electrically insulating material which is coated at least in part with an electrically conductive coating.

12. Method as defined in claim:

1, wherein the semiconductor material is n-conductive or p-conductive silicon, germanium, carbon, boron, a Group III/Group V compound or a Group II/Group VI compound.

13. Method as defined in claim 1, additionally comprising providing a pn-junction near the surface on one side of the semiconductor layer.

14. Method as defined in claim 1, additionally comprising providing a light transmitting Schottky contact on one side of the semiconductor layer.

15. Method as defined in claim 1, additionally comprising providing a light transmitting hetero-junction on one side of the semiconductor layer.

16. Method as defined in claim 13, 14, or 15, wherein said one side is the side of the semiconductor layer which is removed from the substrate.

17. Method as defined in claim 1, additionally comprising coating the semiconductor layer with an insulating layer of a thickness less than 1×

10^-6 cm.

18. Method as defined in claim 17, wherein the thickness of said insulating layer is about 2×

10^-7 cm.

19. Method as defined in claim 1, wherein said layer of semiconductor material is applied in an atmosphere which contains a gas which is non-reactive or slightly reactive with said semiconductor material, but which is highly reactive with impurities in said semiconductor material.

20. Method as defined in claim 1, additionally comprising raising the temperature of the substrate so that the substrate is at an elevated temperature during the application of the semiconductor layer.

21. Method as defined in claim 1, wherein the semiconductor layer is applied to the substrate in a structured manner with the aid of a mask.

22. Method as defined in claim 1, additionally comprising briefly heating or melting the semiconductor layer with an electric arc jet or plasma jet, after applying the semiconductor layer.