Plasma etch chemistry for anisotropic etching of silicon

• US 4,450,042 A
• Filed: 07/06/1982
• Issued: 05/22/1984
• Est. Priority Date: 07/06/1982
• Status: Expired due to Term

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Purdes, Andrew J.
• Primary Examiner(s): Powell, William A.
• Application Number:
  US06/395,205
• Time in Patent Office: 686 Days
• Field of Search: 156/643, 156/646, 156/657, 156/659.1, 156/662, 156/653, 156/345, 252/79.1, 204/164, 204/192 E, 204/298, 427/38, 427/39
• US Class Current: 438/695
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/32137 of silicon-containing layers
• CPC Class Codes: Y10S 438/963 Removing process residues from vertical substrate surfaces

Abstract

A plasma etch chemistry which allows a near perfectly vertical etch of silicon is disclosed. A Cl-containing compound such as BCl₃ has Br₂ added to it, readily allowing anisotropic etching of silicon. This is due to the low volatility of SiBr₄. The silicon surface facing the discharge is subjected to ion bombardment, allowing the volatilization (etching) of silicon as a Si-Cl-Br compound. The Br which adsorbs on the sidewalls of the etched silicon protects them from the etching. This new plasma etch chemistry yields a very smooth etched surface, and the etch rate is relatively insensitive to the electrical conductivity of the silicon.

Claims

1. The method for selectively etching a layer of a silicon-bearing material in an integrated circuit, comprising the steps of:

providing a patterned masking material over said silicon-bearing material to expose only the areas of said silicon-bearing material which are to be etched;

passing a gaseous mixture over said layer; and

creating a plasma discharge in said gaseous mixture adjacent to said layer of silicon-bearing material;

wherein said gaseous mixture comprises bromine and a chlorine-bearing species.

3. The method of claim 1, wherein said chlorine-bearing species is selected from the group consisting of:

silicon tetrachloride, carbon tetrachloride, phosophorus trichloride, chlorine, and hydrogen chloride.

6. The method of claim 1, 2, or 3, wherein said silicon-bearing material comprises single-crystal silicon.

7. The method of claim 1, 2, or 3, wherein said silicon-bearing material comprises polycrystalline silicon.

8. The method of claim 7, wherein said polycrystalline silicon comprises both lightly doped and heavily doped portions.

9. The method of claim 1, 2, or 3, wherein said silicon-bearing material comprises silicon nitride.

10. The method of claim 1, 2, or 3, wherein said silicon-bearing material comprises a metal silicide.

11. The method of claim 10, wherein said silicide is selected from the group consisting of:

titanium silicide, molybdenum silicide, tungsten silicide, tantalum silicide, palladium silicide, and nickel silicide.

12. The method of claim 1, 2, or 3, wherein gaseous mixture further comprises a concentration of an inert gas.

13. The method of claim 12 wherein the concentration of said inert gas is at least 3 times the concentration of said bromine.

14. The method of claim 1, 2, or 3, wherein said gaseous mixture has a pressure in the range of 50 to 1000 microns.

15. The process of claim 1, 2, or 3, wherein power is applied to said plasma at a power density in the range of 3 to 30 watts per square inch.

16. The process of claim 1, 2, or 3, wherein said gaseous mixture includes bromine, said bromine being supplied at a flow rate in the range of 5 to 50 standard cc per minute.

17. The process of claim 16, wherein the total pressure is in the neighborhood of 300 microns.

2. The method for selectively etching a layer of a silicon-bearing material in an integrated circuit, comprising the steps of:

providing a patterned masking material over said silicon-bearing material to expose only the areas of said silicon-bearing material which are to be etched;

passing a gaseous mixture over said layer; and

creating a plasma discharge in said gaseous mixture adjacent to said layer of silicon-bearing material;

wherein said gaseous mixture comprises bromine, a fluorine-bearing species, and a chlorine-bearing species.

4. The method of claim 2, wherein said fluorine-bearing species is selected from the group consisting of tetrafluoromethane, hexafluoroethane, and octofluoropropane.

5. The method of claim 2, wherein said gaseous mixture comprises a gas selected from the group consisting of:

trifluoromethane, trifluorochloromethane, difluorodichloromethane, and fluorotrichloromethane.