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Method for producing a MISFET

  • US 4,453,305 A
  • Filed: 07/12/1982
  • Issued: 06/12/1984
  • Est. Priority Date: 07/31/1981
  • Status: Expired due to Fees
First Claim
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1. A method for producing a MISFET (metal-insulator-semiconductor field-effect transistor), the method comprising the following steps:

  • (a) providing a substrate of single crystal semiconductor material;

    forming an excess doped region of semiconductor material of opposite conductivity type for(b) providing the source and drain regions of the MISFET;

    (c) forming, between and immediately adjacent the source and drain regions, a steep-walled groove extending depthwise at least to the interface between the excess doped material and the underlying substrate material;

    (d) forming an insulating layer over the surface of the groove and over the excess doped material, windows being provided in the layer to expose the source and drain regions of the excess doped material;

    (e) depositing conductive material so to cover simultaneously the exposed source and drain regions and the base of the groove, to exclusion of the steep side-walls of the groove; and

    (f) annealing the whole to consolidate the contact junctions between the conductive material and the excess doped material.

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