Load cell

• US 4,454,771 A
• Filed: 11/05/1981
• Issued: 06/19/1984
• Est. Priority Date: 11/07/1980
• Status: Expired due to Fees

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Matsuoka, Yoshitaka, Shimazoe, Michitaka
• Primary Examiner(s): Goldberg, Gerald
• Assistant Examiner(s): Tumm, Brian
• Application Number:
  US06/318,361
• Time in Patent Office: 957 Days
• Field of Search: 73/721, 73/727, 73/777, 73/DIG. 4, 73/862.65, 73/862.68, 338/4, 338/5
• US Class Current: 73/862.68
• CPC Class Codes: G01L 1/18 using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material

Abstract

A load cell comprises a semiconductor diaphragm which includes an outer flange portion, a central rigid portion having a smaller thickness than the outer flange portion and a thin resilient portion provided between the outer flange portion and the central rigid portion. At least two piezo-resistors constituting at least part of a bridge circuit are formed in the resilient portion. The load cell further comprises a first glass block secured to the central rigid portion, and a second glass block for securing the outer flange portion. A load is applied to the semiconductor diaphragm through the first glass block, wherein measurement of the applied load is effected by detecting variation in resistance of the resistor bridge circuit.

Claims

1. A semiconductor mechano-electrical converter comprising:

a semiconductor diaphragm having first and second principal surfaces, one of said first and second principal surfaces being substantially flat, said semiconductor diaphragm including a first thick portion, a thin portion disposed at least partially around an outer periphery of said first thick portion and having at least two piezo-resistors formed therein to constitute at least part of a bridge circuit, and a second thick portion disposed around an outer pheriphery of said thin portion; and

load applying means for applying a load selectively across one of said first and second principal surfaces at said first thick portion and across the other of said first and second principal surfaces at said second thick portion, said load applying means including a first block secured to said first thick portion and a second block secured to said second thick portion, said first and second blocks being formed of one material selected from a group consisting of boro-silicate glass and silicon, and said semiconductor diaphragm being formed of an n-type silicon wafer incorporating said piezo-resistors of a p-conductivity type.

2. A semiconductor mechano-electric converter according to claim 1, wherein said first thick portion has a thickness different from that of said second thick portion.

3. A semiconductor mechano-electrical converter according to claim 1 or 2, wherein said load applying means further comprises a rigid body means including said first block, a fixed support, and a flexible member for resiliently coupling said rigid body means to said first support.

4. A semiconductor mechano-electrical converter according to claim 3, wherein said support is of an annular form, said rigid body means includes first and second rigid portions, and said flexible member serves to form a seal between at least said first rigid portion and said support.

5. A semiconductor mechano-electrical converter according to claim 1, wherein said thin portion includes a plurality of spaced members interconnecting predetermined areas of the outer periphery of said first thick portion to predetermined areas of said second thick portion, said piezo-resistors being formed in said substantially flat principal surface.

6. A semiconductor mechano-electrical converter according to claim 1, wherein said thin portion is disposed completely around the outer periphery of said first thick portion and said second thick portion is disposed completely around the outer periphery of said thin portion, said piezo-resistors being formed in said substantially flat principal surface.

7. A semiconductor mechano-electrical converter according to claim 1, wherein said second principal surface has a recess formed therein, said first thick portion has a smaller thickness than said second thick portion, and said second block has a flat top surface which is secured to said second principal surface of the semiconductor diaphragm at said second thick portion.

8. A semiconductor mechano-electrical converter according to claim 1, wherein said second principal surface has a recess formed therein, said first thick portion has a greater thickness than said second thick portion, and said first block has a flat bottom surface secured to said second principal surface of the semiconductor diaphragm at said first thick portion.

9. A semiconductor mechano-electrical converter according to claim 8, wherein said second block has a top surface having a recess formed therein at a central portion thereof, said top surface of the second block and said first principal surface of the semiconductor diaphragm of said second thick portion being hermetically sealed.

10. A semiconductor mechano-electrical converter according to claim 1, wherein said diaphragm has notched portions formed between said first and second thick portions.

11. A semiconductor mechano-electrical converter according to claim 1, further comprising a case accommodating said semiconductor diaphragm and said first and second blocks in such a manner that relative movement is allowed between said first and second blocks.

12. A semiconductor mechano-electrical converter according to claim 2, wherein the one of said first and second blocks secured to the thicker one of said first and second thick portions is spaced from the other of said first and second thick portions by a distance corresponding to the difference in thickness.

13. A load cell comprising:

an n-type silicon wafer semiconductor diaphragm including a thick central portion having a first flat surface, a second thick flange portion disposed to enclose said central portion and having a second flat surface at the side opposite to said first flat surface, and a thin resilient portion for connecting said central portion and said flange portion to each other and having p-conductivity type piezo-resistor elements formed therein;

a first rigid body secured to said first surface of said central portion;

a second rigid body secured to said second surface of said flange portion, said first and second rigid bodies being formed of one material selected from the group consisting of boro-silicate glass and silicon; and

a case accommodating said semiconductor diaphragm, and said first and second rigid bodies in such a manner that a relative movement is allowed between said first and second rigid bodies.

14. A load cell according to claim 13, wherein said central portion and said flange portion have respective thicknesses which differ slightly from each other, the rigid body secured to the thicker one of said central portion and said flange portion being spaced from the other of said central portion and said flange portion by a distance corresponding to said difference in thickness.

15. A load cell according to claim 13 or 14, wherein said resilient portion connects only predetermined areas of said central portion to predetermined areas of said flange portion.