Formation of a multi-nozzle ink jet

• US 4,455,192 A
• Filed: 04/05/1982
• Issued: 06/19/1984
• Est. Priority Date: 05/07/1981
• Status: Expired due to Term

• Current Assignee: Fuji Xerox Company Limited (Fujifilm Holdings Corporation)
• Original Assignee: Fuji Xerox Company Limited (Fujifilm Holdings Corporation)
• Inventors: Tamai, Masayoshi
• Primary Examiner(s): Massie, Jerome W.
• Application Number:
  US06/365,923
• Time in Patent Office: 806 Days
• Field of Search: 156/628, 156/644, 156/647, 156/657, 156/662, 156/600, 346/75, 346/140 R, 239/548, 239/601, 239/690, 239/696
• US Class Current: 216/27
• CPC Class Codes: B41J 2/162 Manufacturing of the nozzle plates
• CPC Class Codes: B41J 2/1629 wet etching
• CPC Class Codes: B81B 2201/052 Ink-jet print cartridges
• CPC Class Codes: B81C 1/00087 Holes

Abstract

A method for the formation of a multi-nozzle ink jet is herein disclosed. In this method a single crystal silicon plate is masked and impurities are diffused upon its surface, creating regions of echant resistance. A second single crystal silicon plate is then grown onto the first, and is masked and etched. Due to the unisotropic etching properties of single crystal silicon plates, a groove is formed in the second plate, and a plurality of nozzles is formed in the first plate. This process yields a multi-nozzle ink jet of greater overall strength and utility, while eliminating the waste due to etching run common in the manufacture of conventional ink jets.

Claims

1. A method for the formation of a multi-nozzle ink jet, comprising the steps of:

masking the surface of a single crystal silicon plate;

diffusing impurities onto the unmasked regions of said plate to render said unmasked regions resistant to known etching compositions;

growing a second single crystal silicon plate onto said first single crystal silicon plate;

masking the surface of said second single crystal silicon plate; and

diffusing an etching composition onto said masked second single crystal silicon plate, whereby said etching composition creates an opening in said second single crystal silicon plate, and creates a plurality of nozzles in said first single crystal silicon plate.

2. The novel method of formation of a multi-nozzle ink jet as in claim 1, wherein said first single crystal silicon plate has a thickness substantially equal to the pitch of said plurality of nozzles.

3. The method for the formation of a multi-nozzle ink jet as in claim 1, wherein said first single crystal silicon plate is of approximately 0.1 to 0.2 mm in thickness and said second single crystal silicon plate is of approximately 0.6 to 0.9 mm in thickness.

4. The method for the formation of a multi-nozzle ink jet as in claim 1, wherein said impurities diffused onto said first single crystal silicon plate comprise boron to form P+ regions.

5. The method for the formation of a multi-nozzle ink jet as in claim 1, wherein said etching composition comprises water, ethylene diamine and pyrocatecol.

6. The method for the formation of the multi-nozzle ink jet as in claim 1, wherein said plurality of nozzles created in said first single crystal silicon plate have a pitch of approximately 0.25 mm and have a concentration of 6 to 10 nozzles per millimeter of length.