Method of forming a shallow and high conductivity boron doped layer in silicon
First Claim
Patent Images
1. A method of forming a relatively high conductivity boron doped layer less than approximately 0.3 microns thick in a silicon substrate comprising the steps of:
- implanting in the substrate with an energy less than approximately 75 Kev a dose of boron difluoride in the range of approximately 6×
1014 /cm2 to 5×
1015 /cm2 ;
damaging the implanted area of the substrate with an implant an amount approximately equivalent to the damage produced by a dose of silicon approximately 1×
1015 /cm2 implanted at an energy of approximately 100 Kev; and
annealing the substrate at a temperature in the range of approximately 675°
C. to 900°
C.
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Accused Products
Abstract
Implanting, with low energy (e.g. 75 Kev and below), a dose of boron difluoride (BF2) into an area on a silicon substrate which is post-damaged or pre-damaged by a silicon implant so that annealing, or activation, can be accomplished at temperatures in the range of 550° C. to 900° C.
32 Citations
11 Claims
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1. A method of forming a relatively high conductivity boron doped layer less than approximately 0.3 microns thick in a silicon substrate comprising the steps of:
-
implanting in the substrate with an energy less than approximately 75 Kev a dose of boron difluoride in the range of approximately 6×
1014 /cm2 to 5×
1015 /cm2 ;damaging the implanted area of the substrate with an implant an amount approximately equivalent to the damage produced by a dose of silicon approximately 1×
1015 /cm2 implanted at an energy of approximately 100 Kev; andannealing the substrate at a temperature in the range of approximately 675°
C. to 900°
C. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of forming a relatively high conductivity boron doped layer less than approximately 0.3 microns thick in a silicon substrate comprising the steps of:
-
implanting in the substrate with an energy less than approximately 75 Kev a dose of boron difluoride in the range of approximately 6×
1014 /cm2 to 5×
1015 /cm2 ; and
thendamaging the implanted area of the substrate with an implant an amount approximately equivalent to the damage produced by a dose of silicon approximately 1×
1015 /cm2 implanted at an energy of approximately 100 Kev at approximately room temperature; and
thenannealing the substrate at a temperature in the range of approximately 550°
C. to 900°
C.
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10. A method of forming a relatively high conductivity boron doped layer less than approximately 0.3 microns thick in a silicon substrate comprising the steps of:
-
implanting in the substrate with an energy less than approximately 75 Kev a dose of boron difluoride in the range of approximately 6×
1014 /cm2 to 5×
1015 /cm2 ; and
thendamaging the implanted area of the substrate with an implant an amount approximately equivalent to the damage produced by a dose of silicon approximately 1×
1015 /cm2 implanted at an energy of approximately 100 Kev at a temperature of approximately liquid nitrogen; and
thenannealing the substrate at a temperature in the range of approximately 675°
C. to 900°
C.
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11. A method of forming a relatively high conductivity boron doped layer less than approximately 0.3 microns thick in a silicon substrate comprising the steps of:
-
damaging an area in the substrate with an implant an amount approximately equivalent to the damage produced by a dose of silicon approximately 1×
1015 /cm2 implanted at an energy of approximately 100 Kev at a temperature of approximately liquid nitrogen; and
thenimplanting in the damaged area with an energy less than approximately 75 Kev a dose of boron difluoride in the range of approximately 6×
1014 /cm2 to 5×
1015 /cm2 ; and
thenannealing the substrate at a temperature in the range of approximately 600°
C. to 900°
C.
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Specification
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Current AssigneeMotorola, Inc. (Motorola Solutions, Inc.)
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Original AssigneeMotorola, Inc. (Motorola Solutions, Inc.)
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InventorsWu, Schyi-Yi
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Primary Examiner(s)Roy, Upendra
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Application NumberUS06/434,677Time in Patent Office620 DaysField of Search148/1.5, 148/187, 29/576 B, 357/2, 357/91US Class Current438/515CPC Class CodesH01L 21/26506 in group IV semiconductorsH01L 21/26513 of electrically active speciesH01L 21/2658 of a molecular ion, e.g. de...Y10S 148/024 Defect control-gettering an...
