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Process for etching tapered vias in silicon dioxide

  • US 4,461,672 A
  • Filed: 11/18/1982
  • Issued: 07/24/1984
  • Est. Priority Date: 11/18/1982
  • Status: Expired due to Term
First Claim
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1. A method for fabricating a semiconductor device comprising the steps of:

  • forming an insulating layer on a surface of a semiconductor body;

    depositing a semiconductor layer of a predetermined thickness on said insulating layer;

    selectively masking said semiconductor layer with an apertured resist;

    exposing said device to a selective etchant to form an opening in said semiconductor layer extending to the surface of said insulating layer; and

    exposing said device to a nonselective etchant for etching said semiconductor layer and said insulating layer at predetermined rates, whereby tapered apertures are formed in said insulating layer.

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