End point detection

• US 4,462,860 A
• Filed: 12/20/1982
• Issued: 07/31/1984
• Est. Priority Date: 05/24/1982
• Status: Expired due to Term

• Current Assignee: Bell Telephone Laboratories, Inc. (Nokia Corporation)
• Original Assignee: AT&T, Inc.
• Inventors: Szmanda, Charles R.
• Primary Examiner(s): Kittle, John
• Assistant Examiner(s): Dees, Jose G.
• Application Number:
  US06/451,029
• Time in Patent Office: 589 Days
• Field of Search: 430/30, 430/311, 430/329, 156/626, 156/627, 354/298, 356/436, 356/441, 356/448, 356/357, 356/358, 356/381, 356/382, 356/355, 356/378, 364/566, 364/803
• US Class Current: 430/30
• CPC Class Codes: G01B 11/0683 measurement during deposition or removal of the layer
• CPC Class Codes: G03F 7/30 Imagewise removal using liquid means

Abstract

The clearing point of photoresist development is detected automatically by illuminating the developing photoresist surface with intense monochromatic light. Interfering reflection from the resist-substrate interface and the fast eroding and slow eroding resist surfaces produces fast and slow oscillatory signals. These signals are processed to produce a logical output indicative of the cessation of the fast oscillations in the presence of the continuing slow oscillations signaling the clearing point of development.

Claims

1. A method for manufacture of a microminiature device which includes the steps of forming a patterned layer by removing a thin film portion of a first material from an underlying support body in the presence of an adjacent region of a second material on the support body with said materials having different removal rates, and determining the removal of the first material by directing a light beam on the material and measuring a change in the reflected beam, the invention characterized in that:

a. the beam has a size substantially greater than the thin film portion of the first material upon which it is incident and is incident on substantial portions of the second material,

b. the regions of the second material that form the pattern in the patterned layer correspond to one or more features of the microminiature device, and

c. both the first and second materials have finite removal rates and the removal rates of both materials are sufficient to produce oscillations in the portion of the beam reflected from said adjacent region.

2. The method of claim 1 in which the reflected beam is converted to an analog electrical signal, the second and third analog derivatives of the electrical analog signal are derived electrically, and the selective process is terminated at a point dependent on the point at which the second and third derivatives are essentially zero.