Ultra-thin microelectronic pressure sensors

• US 4,463,336 A
• Filed: 06/24/1983
• Issued: 07/31/1984
• Est. Priority Date: 12/28/1981
• Status: Expired due to Fees

• Current Assignee: United Technologies Corporation (Rtx Corporation)
• Original Assignee: United Technologies Corporation (Rtx Corporation)
• Inventors: Grudkowski, Thomas W., DeMaria, Anthony J., Black, James F.
• Primary Examiner(s): Albritton, C. L.
• Application Number:
  US06/507,449
• Time in Patent Office: 403 Days
• Field of Search: 338/2-5, 73/721, 73/727, 73/DIG. 4
• US Class Current: 338/4
• CPC Class Codes: B81B 2201/0264 Pressure sensors
• CPC Class Codes: B81B 7/0077 Other packages not provided for in groups B81B7/0035 - B81B7/0074
• CPC Class Codes: G01B 2210/64 Interconnection or interfacing through or under capping or via rear of substrate in microsensors
• CPC Class Codes: G01L 9/0042 Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively
• CPC Class Codes: G01L 9/0054 integral with a semiconducting diaphragm

Abstract

A plurality of thin pressure sensors are made by processing a first large wafer (20, 110) to provide a plurality of electronic devices (28, 122, 124, 125) having a characteristic which varies inversely with strain, and processing a second wafer (40) to provide a plurality of cavities (46) each registered on the second wafer so as to be registerable with a corresponding device on the first wafer. The wafers (20, 40, 110) have thick undoped silicon substrates (21, 41, 114) which are utilized as handles or carriers during the processing, and are stripped off by etching to a highly doped boron etch stop layer (22, 42, 112) when the processing has proceeded to a point where the need therefore has been satisfied. The first wafers (20, 110) are provided with a suitable pattern of borosilicate glass (except in the region where the pressure sensors are formed) so that the two wafers may be joined by a field assisted bonding at a suitable temperature in a vacuum. Electric contact to the devices is provided by holes (51, FIG. 9; 56-59 , FIG. 13) through the entire wafer.

Claims

1. A microelectronic device comprising:

a first silicon piece having an electronic device that has an electrical characteristic which varies with strain formed at a first surface thereof, said first piece being sufficiently thin to deflect in response to variations in ambient pressure sufficiently to provide a measurable variation in said electrical characteristic, access holes extending from a second surface of said first piece to said electronic device;

electrical conductors extending from said electronic device outward through said access holes;

a second silicon piece having a cavity formed at a first surface thereof;

said first surfaces of said pieces facing each other with said device adjacent said cavity; and

said pieces bonded together with borosilicate glass extending between said first surfaces except in the region of said device and said cavity.