Method for forming photovoltaic cells employing multinary semiconductor films

• US 4,465,575 A
• Filed: 02/28/1983
• Issued: 08/14/1984
• Est. Priority Date: 09/21/1981
• Status: Expired due to Term

• Current Assignee: Siemens Solar Industries L.P. (Siemens AG)
• Original Assignee: Atlantic Richfield Company Incorporated (BP PLC)
• Inventors: Love, Robert B., Choudary, Uppala V.
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US06/470,418
• Time in Patent Office: 533 Days
• Field of Search: 204/192 S, 204/192 P, 136/260, 136/264, 136/265, 427/74, 427/76, 427/87
• US Class Current: 204/192.26
• CPC Class Codes: C23C 14/0623 Sulfides, selenides or tellurides
• CPC Class Codes: H01L 31/0322 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
• CPC Class Codes: H01L 31/18 Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• CPC Class Codes: H01L 31/186 Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
• CPC Class Codes: H01L 31/1876 Particular processes or apparatus for batch treatment of the devices
• CPC Class Codes: Y02E 10/541 CuInSe2 material PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

At least two constituent elements of a semiconductor compound are deposited in varying proportions by magnetron sputtering to produce a film having a preselected concentration gradient of the constituent elements. The film can be heat treated during or after deposition to diffuse the constituent elements within the film and enhance growth of a desired film structure. The sputtering step may be performed using a planar magnetron having a plurality of continuous magnetically enhanced sputtering cathodes extending about a common axis. Each of the cathodes includes a source structure containing at least one of the constituent elements, and provision for applying electrical power to the source structure to sputter the constituent element at a controlled rate. If one of the elements is difficult to control in the deposition process, it can be sputtered from a cathode made up of a stable alloy of the element and another constituent of the film. For example, when the semiconductor compound is CuInSe₂, two of the sputtering cathodes may comprise In₂ Se₃ and Cu₂ Se, respectively, and a third optimal cathode comprises either Cu or In.

Claims

1. A method for use in the manufacture of photovoltaic cells having a film of a Cu-ternary semiconductor compound made up of a plurality of constituent elements, comprising the steps of:

magnetron sputtering at least two constituent elements of the Cu-ternary compound simultaneously onto a substrate in a first preselected proportion; and

subsequently magnetron sputtering said at least two constituent elements simultaneously onto the substrate in at least one other preselected proportion;

whereby a composite sputtered film of the Cu-ternary compound having a preselected concentration gradient of at least one of the constituent elements is produced on the substrate.

2. The method of claim 1 wherein the sputtering steps are performed at room temperature and the method further comprises the step of subsequently heat treating the composite sputtered film to produce a macroscopically homogeneous film.

3. The method of claim 2 wherein the heat treatment is carried out at a temperature of at least approximately 350 degrees Celsius.

4. The method of claim 1 wherein said Cu-ternary semiconductor compound is a chalcopyrite containing at least one Group III element, and the preselected concentration gradient comprises a gradient in the ratio of the concentration of Cu to the concentration of the Group III element.

5. The method of claim 4 wherein the Cu-ternary semiconductor compound includes a Group VI element and the constituent elements are sputtered from stable alloys containing the Group VI element.

6. The method of claim 5 which further comprises the step of subsequently heat treating the film in a reactive atmosphere containing the Group VI element.

7. The method of claim 4 wherein the semiconductor compound is CuInSe₂ and the constituent elements are sputtered from stable alloy targets containing Se.

8. The method of claim 7 wherein the alloy targets comprise Cu₂ Se and In₂ Se₃, respectively.

9. The method of claim 1 wherein the step of sputtering the constituent elements in at least one other preselected proportion comprises varying the relative sputtering rate of at least one of the constituent elements during the sputtering process.

10. The method of claim 9 wherein a plurality of planar magnetron cathodes containing said at least two constituent elements, respectively, are positioned in close proximity to one another, and the relative sputtering rate of at least one of said constituent elements is varied by individually varying the electrical power applied to the cathodes.

11. The method of claim 1 wherein a first set of planar magnetron cathodes respectively containing said at least two constituent elements is positioned at a first location, and power is applied thereto at a first preselected set of levels to sputter said at least two constituent elements in said first preselected proportion;

and at least one other set of planar magnetron cathodes respectively containing said at least two constituent elements is positioned at another location, and power is applied thereto at another preselected set of levels to sputter said at least two constituent elements in one of said other preselected proportions;

said magnetron sputtering steps including moving the substrate sequentially past the first set of cathodes and said at least one other set of cathodes in mass transfer proximity thereto.

12. The method of claim 11 which further comprises combining said at least two constituent elements into a stable alloy in the production of at least one of the cathodes of each set, whereby the first preselected sputtering proportion is controlled, in part, by the stoichiometric ratio of elements in said alloy.

13. The method of claim 1 wherein the concentration gradient of the composite film, as deposited, is a smoothly varying function of film depth.