Predistortion circuit for a power amplifier
First Claim
1. An RF predistortion circuit for an RF power amplifier which, as a function of the power level of an RF input signal, has non-linear gain and phase shift characteristics for a signal passing therethrough, comprising in combination:
- a circuit input terminal to which may be applied an RF input signal of time-varying power;
a dual gate FET including a first gate, a second gate, a drain and source, one of the latter two of which is coupled to said RF amplifier;
an inductive matching network coupled between the circuit input terminal and first gate; and
means coupled between the circuit input terminal and second gate for applying to said second gate a signal which is a function of the power level of said input signal for varying the gain through said FET of the RF signal in response to the input signal to compensate for the non-linear gain characteristics of said RF amplifier and wherein the combination of said inductive matching network and signal from the signal applying means varies the phase of the signal passing through said FET to compensate for said phase non-linearity in the RF amplifier.
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Accused Products
Abstract
A predistortion circuit for a radio frequency power amplifier which has gain and phase shift characteristics that are non-linear as a function of power level of an RF input signal. The circuit includes a dual gate FET, with a drain coupled to the power amplifier. A modulated RF input signal is applied to an inductive matching network which is coupled to the signal gate of the FET. A modulating envelope detected version of the input signal is applied to a video amplifier which is coupled to the FET control gate. The signal applied to the control gate varies the gain of the FET as a function of input signal to compensate for the non-linear gain characteristic of the power amplifier and in conjunction with the matching network causes a phase change of the signal through the predistortion circuit to compensate for the non-linear phase characteristic of the power amplifier.
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Citations
7 Claims
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1. An RF predistortion circuit for an RF power amplifier which, as a function of the power level of an RF input signal, has non-linear gain and phase shift characteristics for a signal passing therethrough, comprising in combination:
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a circuit input terminal to which may be applied an RF input signal of time-varying power; a dual gate FET including a first gate, a second gate, a drain and source, one of the latter two of which is coupled to said RF amplifier; an inductive matching network coupled between the circuit input terminal and first gate; and means coupled between the circuit input terminal and second gate for applying to said second gate a signal which is a function of the power level of said input signal for varying the gain through said FET of the RF signal in response to the input signal to compensate for the non-linear gain characteristics of said RF amplifier and wherein the combination of said inductive matching network and signal from the signal applying means varies the phase of the signal passing through said FET to compensate for said phase non-linearity in the RF amplifier. - View Dependent Claims (2, 3, 4, 5, 6, 7)
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Specification
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- Resources
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Current AssigneeLockheed Martin Corporation (Martin Marietta Corporation)
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Original AssigneeRCA Corporation (General Electric Company)
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InventorsKumar, Mahesh, Huang, Ho-Chung, Sechi, Franco N.
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Primary Examiner(s)Mullins, James B.
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Application NumberUS06/422,449Time in Patent Office691 DaysField of Search330/149, 330/136, 330/277US Class Current330/149CPC Class CodesH03F 1/3205 in field-effect transistor ...H03F 1/3241 using predistortion circuit...
