Photolytic production of hydrogen

• US 4,466,869 A
• Filed: 08/15/1983
• Issued: 08/21/1984
• Est. Priority Date: 08/15/1983
• Status: Expired due to Term

• Current Assignee: Energy Conversion Devices
• Original Assignee: Energy Conversion Devices
• Inventors: Ayers, William
• Primary Examiner(s): Williams, Howard S.
• Application Number:
  US06/523,251
• Time in Patent Office: 372 Days
• Field of Search: 204/157.1 W, 204/129, 136/243, 429/111
• US Class Current: 205/340
• CPC Class Codes: C25B 1/55 Photoelectrolysis
• CPC Class Codes: H01G 9/20 Light-sensitive devices
• CPC Class Codes: H01M 14/005 Photoelectrochemical storage cells light sensitive devices H01G9/20, semiconductors sensitive to light H01L31/00

Abstract

Disclosed is a photolytic device comprising a photoelectrode having a plurality of stacked, individual photoelectric or photovoltaic elements between a substrate and an electrode, a counterelectrode which may be a separate spaced counterelectrode or the substrate, and an unbiased external circuit. Also disclosed is a method of forming hydrogen using the photolytic device.

Claims

1. In a method of photolytic production of hydrogen in a photolytic device comprising maintaining an aqueous electrolyte in contact with an anode and a cathode, one of said anode and cathode being a photoelectrode, illuminating the photoelectrode, evolving hydrogen at the cathode and a co-product at the anode, the improvement wherein said photoelectrode comprises a substantially transparent, electrolyte resistance electrocatalytic layer, an electroconductive substrate, and a layered semiconductor photoelectrode element means between and in contact with the electrocatalytic layer and the electroconductive substrate, and wherein the anode and the cathode are electrically connected to each other through an unbiased circuit.

2. The method of claim 1 wherein the other of said anode and cathode is spaced from and faces the transparent, electrolyte resistant, electrocatalytic layer, with the electrolyte therebetween.

3. The method of claim 1 wherein the layered semiconductor photoelectric element means comprises a plurality of individual photoelectrode elements of sequentially decreasing band gap, whereby the individual photoelectrode element in contact with the electrocatalytic layer is formed of high band gap material and the individual photoelectrode element in contact with the substrate is formed of low band gap material.

4. The method of claim 3 wherein the layered semiconductor photoelectrode element means comprises a first individual photoelectric element in substantially ohmic contact with the electrocatalytic layer, and a second individual photoelectrode element in substantially ohmic contact with the electroconductive substrate.

5. The method of claim 4 wherein said first and second individual photoelectric elements generate substantially matched currents from illumination passing through said first individual photoelectric element and into said second individual photoelectric element.

6. The method of claim 4 wherein said layered semiconductor photoelectrode means comprises at least one further individual photoelectric element between said first and second individual photoelectric elements.

7. The method of claim 4 wherein said first and second individual photoelectric elements are cascade elements having substantially direct contact therebetween.

8. The method of claim 4 wherein said first and second individual photoelectric elements have external contact therebetween.

9. The method of claim 3 wherein an individual photoelectric element is formed of variable band gap materials.

10. The method of claim 9 wherein an individual photoelectric element comprises a layer of p-type amorphous semiconductor and a layer of n-type amorphous semiconductor.

11. The method of claim 10 wherein the individual photoelectric element comprises a layer of intrinsic amorphous semiconductor between and in junction contact with the layers of p-type amorphous semiconductor and n-type amorphous semiconductor.

12. The method of claim 10 wherein the amorphous semiconductor comprises a density of states reducing element and a band gap adjusting element.

13. The method of claim 12 wherein the density of state reducing element is fluorine.

14. The method of claim 13 wherein the amorphous semiconductor further comprises hydrogen.

15. The method of claim 12 wherein the amorphous semiconductor is silicon and the band gap adjusting element is germanium.

16. The method of claim 10 wherein the layers of amorphous semiconductor are formed by deposition.

17. The method of claim 16 wherein the layers are deposited by glow discharge deposition.

18. The method of claim 16 wherein the layer of n-type semiconductor is formed by introducing n-type dopant during deposition of the layer.

19. The method of claim 16 wherein the layer of p-type semiconductor is formed by introducing p-type dopant during deposition of the layer.

20. The method of claim 1 wherein the photoelectrode is a cathode having p-type semiconductor material in ohmic contact with the electrocatalytic layer.

21. The method of claim 20 wherein the electrocatalytic layer comprises a material chosen from the group consisting of iron, cobalt, nickel, rhodium, ruthenium, palladium, osmium, iridium, platinum, oxides thereof, alloys thereof, and combinations thereof.

22. The method of claim 21 wherein the electrocatalytic layer comprises a high surface area material chosen from the group consisting of Raney nickel and platinum black.

23. The method of claim 21 wherein the electrocatalytic layer comprises an electrolyte resistant, p-type, compound semiconductor chosen from the group consisting of nickel oxide and ferric oxide.

24. The method of claim 21 wherein the electrocatalytic layer comprises an intrinsic semiconductor chosen from the group consisting of Fe₃ O₄, Co₃ O₄, and mixtures thereof.

25. The method of claim 20 comprising evolving hydrogen at the electrocatalytic layer of the photoelectrode, and coproduct at the anode.

26. The method of claim 1 wherein the photoelectrode is an anode having n-type semiconductor material in contact with the electrocatalytic layer.

27. The method of claim 26 wherein the electrocatalytic layer comprises ruthenium and titanium oxides.

28. The method of claim 26 wherein the electrocatalytic layer comprises indium and tin oxides.

29. The method of claim 26 wherein the electrocatalytic layer comprises an electrolyte resistant, n-type semiconductor.

30. The method of claim 26 comprising evolving hydrogen at the cathode and co-product at the photoelectrode.

31. The method of claim 1 wherein the aqueous electrolyte contains a halide chosen from the group consisting of chlorides, bromides, iodides and mixtures thereof, and the anodic co-product in the halogen.

32. The method of claim 31 wherein the aqueous halide is chosen from the group consisting of hydrogen, lithium, sodium and potassium halides, and mixtures thereof.

33. The method of claim 1 comprising feeding electrolyte to the photolytic device during photolysis.

34. The method of claim 33 comprising withdrawing depeleted electrolyte from the photolytic device during photolysis.

35. The method of claim 34 comprising substantially continuously feeding electrolyte to the photolytic device and withdrawing depleted electrolyte from the photolytic device during photolysis.

36. The method of claim 35 comprising withdrawing depleted electrolyte from the photolytic device, fortifying the depleted electrolyte, and subjecting the fortified electrolyte to photolysis.

37. The method of claim 36 comprising withdrawing hydrogen during photolysis.

38. The method of claim 37 comprising substantially continuously withdrawing hydrogen during photolysis.

72. The method of claim 1 wherein the other of said anode and cathode comprises an electrocatalytic layer on the opposite surface of the substrate.

39. A photolytic device coprising:

(a.) a photoelectrode comprising;

(1.) an electrocatalytic surface substantially resistant to aqueous halide solutions and substantially transparent;

(2.) an electrically conductive substrate; and

(3.) a plurality of layered, individual semiconductor photoelectric element means between and in contact with the electrocatalytic layer and the electrically conductive substrate;

(b.) a substantially non photoactive, electrolyte resistant counter electrode electrically in circuit with the photoelectrode through an unbiased circuit; and

(c.) means for maintaining a aqueous electrolyte in contact with the counter electrode and the photoelectrode.

40. The photolytic device of claim 39 wherein the counter electrode is spaced from the photoelectrode and faces the transparent, electrolyte resistant, electrocatalytic layer thereon.

41. The photolytic device of claim 39 wherein the photoelectrode comprises a plurality of layered, individual semiconductor photoelectric elements of sequentially decreasing band gap, the individual semiconductor element in contact with the electrocatalytic layer being formed of high band gap material and the individual photoelectrode element in contact with the substrate being formed of low band gap material.

42. The photolytic device of claim 41 wherein the photoelectrode comprises at least one further individual semiconductor photoelectric element of intermediate band gap interposed between the high band gap material and the low band gap material.

43. The photolytic device of claim 41 wherein the individual semiconductor photoelectric elements are cascade elements having substantially direct junction contact therebetween.

44. The photolytic device of claim 41 wherein the individual semiconductor photoelectric elements have external contact therebetween.

45. The photolytic device of claim 41 wherein an individual semiconductor photoelectric element is formed of variable band gap materials.

46. The photolytic device of claim 45 wherein an individual semiconductor photoelectric element comprises a layer of p-type amorphous semiconductor and a layer of n-type amorphous semiconductor.

47. The photolytic device of claim 46 wherein an individual semiconductor element comprises a layer of intrinsic amorphous semiconductor between and in junction contact with the layers of p-type amorphous semiconductor and n-type amorphous semiconductor.

48. The photolytic device of claim 46 wherein the amorphous semiconductor comprises a density of states reducing element and a band gap adjusting element.

49. The photolytic device of claim 48 wherein the density of states reducing element is fluorine.

50. The photolytic device of claim 49 wherein the amorphous semiconductor comprises hydrogen.

51. The photolytic device of claim 48 wherein the amorphous semiconductor is silicon and the band gap adjusting element is germanium.

52. The photolytic device of claim 46 wherein the layers are formed by deposition.

53. The photolytic device of claim 52 wherein the layers are deposited by glow discharge deposition.

54. The photolytic device of claim 52 wherein the layer of n-type semiconductor is formed by introducing n-type dopant during deposition of the layer.

55. The photolytic device of claim 52 wherein the layer of p-type semiconductor is formed by introducing p-type dopant during deposition of the layer.

56. The photolytic device of claim 39 wherein the counterelectrode comprises an electrocatalytic layer on the opposite surface of the substrate.

57. The photolytic device of claim 56 wherein the photoelectrode is a cathode having p-type semiconductor material in contact with the electrocatalytic layer.

58. The photolytic device of claim 57 wherein the electrocatalytic layer comprises of material chosen from the group consisting of iron, cobalt, nickel, rhodium, ruthenium, palladium, osmium, iridium, platinum, oxides thereof, alloys thereof, and combinations thereof.

59. The photolytic device of claim 57 wherein the electrocatalytic layer comprises a high surface area material chosen from the group consisting of Raney nickel and platinum black.

60. The photolytic device of claim 57 wherein the electrocatalytic layer comprises an electrolyte resistant, p-type, compound semiconductor chosen from the group consisting of nickel oxide and ferric oxide.

61. The photolytic device of claim 57 wherein the electrocatalytic layer comprises an intrinsic semiconductor chosen from the group consisting of Fe₃ O₄, Co₃ O₄, and mixtures thereof.

62. The photolytic device of claim 56 wherein the photoelectrode is an anode having an n-type semiconductor material in contact with the electrocatalytic layer.

63. The photolytic device of claim 62 wherein the electrocatalytic layer comprises ruthenium and titanium oxides.

64. The photolytic device of claim 62 wherein the electrocatalytic layer comprises indium and tin oxides.

65. The photolytic device of claim 62 wherein the electrocatalytic layer comprises an electrolyte resistant, substantially transparent, n-type semiconductor.

66. The photolytic device of claim 56 comprising means for feeding electrolyte to the photolytic device.

67. The photolytic device of a claim 66 comprising meas for withdrawing depleted electrolyte from the photolytic device.

68. The photolytic device of claim 67 wherein the means for feeding electrolyte to the photolytic device and withdrawing depleted electrolyte therefrom comprise means for substantially continuously feeding electrolyte and means for substantially continuously withdrawing depleted electrolyte during photolysis.

69. The photolytic device of claim 68 comprising means for fortifying depleted electrolyte.

70. The photolytic device of claims 69 comprising means for feeding fortified electrolyte to a photolytic device.

71. The photolytic device of claim 68 comprising means for substantially continuously withdrawing hydrogen during photolysis.