System for resist defect measurement

• US 4,473,795 A
• Filed: 02/23/1983
• Issued: 09/25/1984
• Est. Priority Date: 02/23/1983
• Status: Expired due to Term

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Wood, Robert L.
• Primary Examiner(s): Krawczewicz, Stanley T.
• Assistant Examiner(s): Solis, Jose M.
• Application Number:
  US06/468,907
• Time in Patent Office: 580 Days
• Field of Search: 324/96, 324/51, 324/52, 324/54, 324/71.1, 324/73 PC, 324/71.3, 324/158 R, 118/712, 118/713, 29/574, 427/8, 427/10
• US Class Current: 324/501
• CPC Class Codes: G01R 31/2656 using non-ionising electromagnetic radiation, e.g. optical radiation

Abstract

A non-destructive test system for determining the number, size and location of pinhole defects in insulative coatings on a semiconductor substrate employing photocathodic current measurement at the semiconductor surface. This current is produced by contacting the coated semiconductor with an aqueous electrolyte, applying a small electrical bias with respect to a metal electrode, and scanning a small, focused light beam over the semiconductor surface. The frequency of current peaks produced is proportional to defect density. Current peaks provide data relative to defect size and location is correlated relative to scanning data to determine defect location.

Claims

1. A test system for measuring and mapping pinhole defects in an insulator coating on a surface of a photoconductor substrate comprising:

optical means for generating a minute spot of light substantially smaller than the area of said surface,

means for scanning said spot of light over said surface,

means for interposing an electrolyte containing a reducible solute between said surface and said spot of light,

means for electrically biasing said substrate with respect to said electrolyte, and

means for determining the magnitude and number of current flow variations across said coating and said electrolyte and for determining the scanning position of said spot of light, as respective measurements of the pinhole size, density and location in said coating.

2. The system of claim 1, wherein said means for interposing an electrolyte comprises surface tension means coupled to said optical means for positioning, and maintaining a droplet of electrolyte stationary relative to said minute spot of light as said surface is scanned.

3. The system of claim 2, wherein said surface tension means comprises an electrode structure coupled to said optical means and having a hollow bend to hold said droplet at the end of said optical means.

4. The system of claim 2, wherein said surface tension means comprises a retention cup coupled to said optical means, said retention cup opening towards said surface and defining a cavity for said droplet, wherein surface tension exists between the edge of said cup and said surface to retain said droplet.

5. The system of claim 4 wherein said retention cup is plastic.

6. The system of claim 1, wherein said photoconductive substrate is a silicon semiconductor structure.

7. The system of claim 6, wherein said coating is a photolithographic resist.

8. The system of claim 7, wherein said electrolyte is an aqueous sulfuric acid solution.

9. The system of claim 8, wherein said scanning means comprises means for orthogonal movement of said substrate under a stationary spot of light from said optical means.

10. The system of claim 1, wherein said means for electrically biasing comprises, a power source, an electrode structure coupled to optical means including surface tension means for securing said electrolyte thereto in bridging relationship with said coating and, means to negatively bias said substrate with respect to said electrolyte.

11. The system of claim 1, further comprising means to maintain said photoconductive substrate at a substantially constant temperature.

12. The system of claim 1 wherein said optical means comprises a light source, means for modulating light from said source, and a fiber optic bundle for transmitting said modulated light and projecting it as a spot on said surface.

13. The system of claim 12 wherein said means for electrically biasing comprises a power source, an electrode coupled to said fiber optic bundle and, said means for interposing an electrolyte coupled to said electrode to maintain said electrolyte in contact with said electrode.

14. The system of claim 13 wherein said electrode is an annular metal member surrounding said fiber optic bundle and said means for interposing said electrolyte comprises a retaining cup secured to said electrode and opening downward toward said surface to contain said electrolyte.

15. A method for measuring and mapping pinhole defects in an insulator coating on a surface of a photoconductive substrate comprising the steps of:

disposing an electrolyte between said surface and a source of light and electrically biasing said photoconductive substrate with respect to said electrolyte;

scanning said surface with a minute spot of light substantially smaller than the area of said surface through an electrolyte in contact with and electrically biased with respect to said substrate, wherein said electrolyte contains a reducible solute, and

measuring the magnitude and number of current flow variations and position of said spot of light to determine the pinhole size, density and location of such defects in said coating.

16. The method of claim 15, wherein said photoconductive substrate is a silicon semiconductor structure.

17. The method of claim 16, wherein said coating is a photolithographic resist.

18. The method of claim 17, wherein said electrolyte is an aqueous sulfuric acid solution, and said substrate is negatively biased with respect to said electrolyte.

19. The method of claim 18, wherein said scanning is effected by orthogonal movement of said substrate relative to said spot of light.

20. The method of claim 15, further comprising the step of constraining the volume of said electrolyte about the area of said spot of light.