Semiconductor integrated circuit device including means for reducing the amount of potential variation on a reference voltage line

• US 4,477,736 A
• Filed: 10/26/1981
• Issued: 10/16/1984
• Est. Priority Date: 11/07/1980
• Status: Expired due to Term

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Onishi, Yoshiaki
• Primary Examiner(s): Miller, Stanley D.
• Assistant Examiner(s): Hudspeth, David R.
• Application Number:
  US06/315,056
• Time in Patent Office: 1,086 Days
• Field of Search: 307/200 A, 307/200 B, 307/442, 307/443, 307/542, 307/543, 307/297, 307/491, 328/263, 357/23 C, 179/77, 381/94
• US Class Current: 327/543
• CPC Class Codes: G05F 3/24 wherein the transistors are of the field-effect type only G05F3/205, G05F3/26, G05F3/30 take precedence
• CPC Class Codes: G11C 5/063 Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
• CPC Class Codes: G11C 5/147 Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops G11C5/141 takes precedence
• CPC Class Codes: H01L 23/5223 Capacitor integral with wiring layers
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout
• CPC Class Codes: H01L 27/0811 MIS diodes
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/3011 Impedance

Abstract

In an MOS memory, a reference voltage is generated to determine an input threshold voltage of the input circuit. Noise fed from various signal wirings to the reference voltage wiring via stray capacitances is reduced by a decoupling capacitance formed between the reference voltage wiring and the ground wiring. The decoupling capacitance, however, permits relatively large levels of noise induced on the ground wiring by changes in the operation current of the circuit to be transmitted to the reference voltage wiring. According to this invention, a capacitance which forms a pair with the decoupling capacitance is provided between the power-supply wiring and the reference voltage wiring. Noise induced on the power-supply wiring by a change in the operation current of the circuit is substantially opposite in polarity to the noise induced on the ground wiring. Therefore, the noise fed from the ground wiring to the reference voltage wiring is cancelled by the capacitance provided between the power-supply wiring and the reference voltage wiring.

Claims

1. A semiconductor integrated circuit device comprising:

a pair of first and second wirings to which a power-supply voltage is applied;

an electronic circuit connected between said first wiring and said second wiring, and to which said power-supply voltage is applied via said first and second wirings;

a third wiring to which a reference voltage is applied;

a reference voltage generator to which said power-supply voltage is applied via said first and second wirings, said reference voltage generator including means for producing said reference voltage;

a first capacitor for a-c coupling said third wiring to said second wiring; and

a second capacitor for transmitting variations in potential produced on said first wiring to said third wiring;

wherein when first and second potential variations substantially equal in magnitude and opposite in phase have developed respectively on said first and second wirings due to changes in the operation current of said electronic circuit, the potential variation supplied to said third wiring via said first capacitor is substantially cancelled by the potential variation supplied to said third wiring via said second capacitor.

2. A semiconductor integrated circuit device according to claim 1, wherein said electronic circuit is comprised of a clock signal generator to which said power-supply voltage is applied via said first and second wirings.

3. A semiconductor integrated circuit device according to claim 2, wherein said first and second capacitors are each composed of a first electrically conductive layer formed on the semiconductor substrate and electrically insulated therefrom via a first insulating film, and a second electrically conductive layer formed on said first electrically conductive layer and electrically insulated therefrom via a second insulating layer.

4. A semiconductor integrated circuit device according to claim 3, wherein the second conductive layers of said first and second capacitors are connected to the third wiring, the first conductive layer of said first capacitor is connected to said first wiring, and the first conductive layer of said second capacitor is connected to said second wiring.

5. A semiconductor integrated circuit device according to claim 3, wherein the second conductive layers of said first and second capacitors are composed of the third wiring, the first conductive layer of said first capacitor is connected to said first wiring, and the first conductive layer of said second capacitor is connected to said second wiring.

6. A semiconductor integrated circuit device comprising:

a semiconductor substrate;

a pair of first and second wiring layers that are formed on said semiconductor substrate and to which a power-supply voltage is applied;

an electronic circuit connected between said first wiring layer and said second wiring layer, and to which said power-supply voltage is applied via said first and second wiring layers;

a reference voltage generator which contains a plurality of resistance elements and which produces a reference voltage upon receipt of the power-supply voltage via said first and second wiring layers;

a third wiring layer formed on said semiconductor substrate and to which said reference voltage is applied;

an input circuit which is comprised of a plurality of insulated gate field effect transistors, and which has a first input terminal that receives input signals from the outside of said semiconductor substrate, and a second input terminal to which said reference voltage is applied via said third wiring layer;

a first capacitor connected between said first wiring layer and said third wiring layer; and

a second capacitor connected between said second wiring layer and said third wiring layer,

wherein when first and second potential variations substantially equal in magnitude and opposite in phase have developed respectively on said first and second wiring layers due to changes in the operation current of said electronic circuit, the potential variation supplied to said third wiring layers via said first capacitor is substantially cancelled by the potential variation supplied to said third wiring layers via said second capacitor.

7. A semiconductor integrated circuit device according to claim 6, wherein said third wiring layer is formed on the first and second conductive layers and electrically insulated therefrom via an insulating film, said first and second conductive layers being formed on said semiconductor substrate and electrically insulated therefrom via an insulating film, and wherein said first capacitor is comprised of said first conductive layer and said third wiring layer, and said second capacitor is comprised of said second conductive layer and said third wiring layer.

8. A semiconductor integrated circuit device according to claim 7, wherein said first and second conductive layers each are comprised of an electrically conductive layer divided into a plurality of sections.

9. A semiconductor integrated circuit device according to claim 7, wherein a major portion of said third wiring layer is arrayed on the outer side of said first and second wiring layers on said semiconductor substrate.

10. A semiconductor integrated circuit device according to claim 7, wherein said first and second conductive layers are formed simultaneously with the formation of the gate electrodes of said insulated gate field effect transistors.

11. A semiconductor integrated circuit device according to claim 10, wherein said first to third wiring layers are composed of a metal, and said first and second conductive layers are composed of polycrystalline silicon.

12. A semiconductor integrated circuit device according to claim 6, wherein said electronic circuit comprises a clock signal generator which is comprised of insulated gate field effect transistors, and to which said power-supply voltage is applied via said first and second wiring layers, and said input circuit is controlled by the clock signals produced by said clock signal generator.

13. A semiconductor integrated circuit device according to claim 6, wherein said electronic circuit is comprised of a back bias voltage generator comprising insulated gate field effect transistors, and which produces a bias voltage that will be applied to said semicondcutor substrate upon receipt of the power-supply voltage via said first and second wiring layers.

14. A semiconductor integrated circuit device according to claim 6, wherein said first and second capacitors are composed of MOS capacitors that are formed simultaneously with the formation of said insulated gate field effect transistors.