Equilibrium crystal growth from substrate confined liquid

• US 4,479,847 A
• Filed: 12/30/1981
• Issued: 10/30/1984
• Est. Priority Date: 12/30/1981
• Status: Expired due to Fees

• Current Assignee: California Institute of Technology
• Original Assignee: California Institute of Technology
• Inventors: Kuech, Thomas F., McCaldin, James O.
• Primary Examiner(s): Bernstein, Hiram H.
• Application Number:
  US06/335,889
• Time in Patent Office: 1,035 Days
• Field of Search: 156/624, 427/86, 427/93, 148/171
• US Class Current: 117/81
• CPC Class Codes: C30B 11/002 Crucibles or containers for supporting the melt
• CPC Class Codes: C30B 11/14 characterised by the seed, e.g. its crystallographic orientation
• CPC Class Codes: C30B 29/40 AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi

Abstract

A method for in situ growth of an array of single crystals from material deposited on an inert substrate is comprised of (1.0) preparing a surface of the substrate with a closely packed array of concavities which stably contain liquid material by the combined effects of surface tension and geometry, (2.0) depositing the material from which the crystals are to be grown on the prepared surface of the substrate to at least partially fill the concavities, (3.0) removing deposited material from the field by evaporation etching after the next step, and (4.0) crystallizing the material remaining in each concavity. The process may be followed by a further step (5.0) of recrystallizing the material to assure a single crystal in each concavity free of any defects, such as defects resulting from etching. Crystallization may be effected by isothermally heating the substrate at a liquid temperature of the deposited material and changing the composition of the deposited material, and deposited material may be removed from the field during the process of crystallizing the material. The concavities are preferably provided as densely packed polygons plasma etched with vertical walls.

Claims

1. A method for in situ growth of an array of single crystals from nonwetting material deposited on an inert substrate comprising the steps of

preparing a surface of said substrate with an array of concavities which, will the substrate uniformly heated, stably contain liquid material at the substrate temperature by the combined effects of surface tension and geometry, said array of concavities having a field between every pair of concavities having a width that is small relative to the smallest dimension of the concavities, said array having a geometry that maximizes the total concavity area, which is large relative to the total field area,

depositing said material from which said crystals are to be grown on said prepared surface of said substrate to at least partially fill said concavities,

chemically removing deposited material from said field without a mask, and

crystallizing a single crystal from said material in each concavity with the substrate uniformly heated and said material at the same temperature.

2. A method as defined in claim 1 wherein crystallization is effected by isothermally heating said substrate at a liquid temperature of said deposited material and changing the composition of said deposited material.

3. A method as defined in claim 1 or 2, wherein said material is deposited on said substrate while said substrate is heated at a liquid temperature of said material.

4. A method as defined in claim 3, wherein said deposited material is removed from said field during the process of crystallizing said material.

5. A method as defined in claim 1 wherein said concavities are densely packed polygons.

6. A method as defined in claim 5 wherein said polygons are selected from a group of geometric configurations consisting of triangles, parallelograms and hexagons.

7. A method as defined in claim 1 wherein said material is deposited as a solid followed by heating above the melting point of said material and cooling below said melting point, and repeating the depositing, heating and cooling procedure a plurality of times to at least partially fill said concavities before chemically removing material deposited on the field of said substrate between concavities.

8. A method as defined in claim 1 wherein said concavities are densely packed irregular hexagons having alternate sides uniformly shorter than the remaining sides of uniform length.

9. A method as defined in claim 1 wherein said concavities are densely packed irregular hexagons having two opposite sides uniformly longer than the remaining sides of uniform length.

10. A method as defined in claim 1 wherein said concavities are densely packed regular hexagons having alternate sides with inclined upper edges, and the remaining sides undercut to leave an overhanging ledge.

11. A method as defined in claim 1 wherein said concavities are densely packed rectangles.

12. A method as defined in claim 11 wherein said rectangular concavities are square.