Polishing method for electrophotographic photoconductive member

• US 4,483,107 A
• Filed: 12/07/1982
• Issued: 11/20/1984
• Est. Priority Date: 06/17/1980
• Status: Expired due to Term

• Current Assignee: Konishiroku Photo Industry Co., Ltd. (Konica Minolta Inc.)
• Original Assignee: Konishiroku Photo Industry Co., Ltd. (Konica Minolta Inc.)
• Inventors: Tomoyori, Kageyuki, Uchida, Tatsuo, Noda, Tadashi
• Primary Examiner(s): DERRINGTON, JAMES H
• Application Number:
  US06/447,687
• Time in Patent Office: 714 Days
• Field of Search: 51/298, 51/281 R, 528/14
• US Class Current: 451/59
• CPC Class Codes: B24B 1/00 Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
• CPC Class Codes: C09K 3/14 Anti-slip materials; Abrasives products specifically intended for the fabrication of abrasive tools, blocks or papers, or for operations of the kind of sand-blasting and barrelling B24B31/14, B24C1/00; polishing compositions containing abrasive or grinding agents C09G1/02; polishing of semi-conductors H01L; friction compositions for brakes or clutches F16D69/02

Abstract

A method of polishing an electrophotographic photoconductive member, which comprises polishing said surface with polishing particles selected from the group consisting of solid organic polishing particles composed of a polysilsesquioxane having, on its silicon atoms, substituents selected from a lower alkyl group having 2 to 5 carbon atoms, an alkoxy group, an aryl group and an aralkyl group; a combination of said solid organic polishing particles and solid inorganic polishing particles; and a combination of solid organic polishing particles composed of polymethylsilsesquioxane and solid inorganic polishing particles.

Claims

1. A method of polishing an electrophotographic conductive member, which comprises polishing said member with polishing particles selected from the group consisting of (1) solid organic polishing particles composed of a polysilsesquioxane having, on its silicon atoms, substituents selected from the group consisting of a lower alkyl group having 2 to 5 carbon atoms, an alkoxy group, an aryl group and an aralkyl group;

(2) a combination of said solid organic polishing particles and solid inorganic polishing particles in a weight ratio of 9;

1 to 1;

9; and

(3) a combination of solid organic polishing particles composed of polymethylsilsesquioxane and solid inorganic polishing particles in a weight ratio of 9;

1 to 1;

9.

2. The method as claimed in claim 1, wherein said polishing particles are solid organic polishing particles composed of a polysilsesquioxane having, on its silicon atoms, substituents selected from the group consisting of a lower alkyl group having 2 to 5 carbon atoms, an alkoxy group, an aryl group and an aralkyl group.

3. The method as claimed in claim 1, wherein said polishing particles are a combination of solid organic polishing particles composed of (i) a polysilsesquioxane having, on its silicon atoms, substituents selected from the group consisting of a lower alkyl group having 1 to 5 carbon atoms, an alkoxy group, an aryl group and an aralkyl group, and (ii) solid inorganic polishing particles.

4. The method as claimed in claim 1, 2 or 3, wherein said substituents are the lower alkyl group and said lower alkyl group is selected from the group consisting of ethyl, propyl and butyl.

5. The method as claimed in claim 1, 2 or 3, wherein said substituents are the alkoxy group and said alkoxy group is selected from the group consisting of methoxy, ethoxy, propoxy and butoxy.

6. The method as claimed in claim 1, 2 or 3, wherein said substituents are the aryl group and said aryl group is phenyl.

7. The method as claimed in claim 1, 2 or 3, wherein said substituents are the aralkyl group and said aralkyl group is benzyl.

8. The method as claimed in claim 2 or 3, wherein the solid organic polishing particles have an average particle size of from 1 to 50 microns.

9. The method as claimed in claim 8, wherein the solid organic polishing particles have an average particle size of from 2 to 20 microns.

10. The method as claimed in claim 3, wherein the solid organic polishing particles have an average particle size of at least 7 microns and the solid inorganic polishing particles have an average particle size of at most 5 microns.

11. The method as claimed in claim 1, 2 or 3, wherein said electrophotographic photoconductive member comprises a photoconductive layer composed of selenium or a selenium-alloy containing one or more elements selected from the group consisting of tellurium, arsenic and antimony.