Method and apparatus for plasma etching a substrate

• US 4,483,737 A
• Filed: 01/31/1983
• Issued: 11/20/1984
• Est. Priority Date: 01/31/1983
• Status: Expired due to Term

• Current Assignee: Sematech, Inc.
• Original Assignee: University of Cincinnati
• Inventors: Mantei, Thomas D.
• Primary Examiner(s): Powell, William A.
• Application Number:
  US06/462,200
• Time in Patent Office: 659 Days
• Field of Search: 156/345, 156/643, 156/646, 156/626, 156/627, 204/164, 204/192 E, 204/298
• US Class Current: 438/732
• CPC Class Codes: H01J 37/32623 Mechanical discharge control means
• CPC Class Codes: H01J 37/32688 Multi-cusp fields

Abstract

A method and apparatus for plasma etching a substrate, such as a semiconductor wafer, utilizing a multipole surface magnetic field confining within an etching chamber an etching plasma of substantially uniform density throughout its volume. The plasma is produced and maintained by subjecting a gas such as CF₄ to an ionizing discharge within the chamber. Only DC power sources are used for the discharge, so that there is virtually no perturbing radio frequency interference produced. The wafer is consequently easily biased relative to the plasma for controlled fine-scale etching. Low gas pressures permitted by the surface magnetic field result in substantially anisotropic etching of the substrate by dense plasma concentrations.

Claims

1. An apparatus for plasma etching of a substrate, comprising:

a chamber,

a gas within the chamber,

means for ionizing the gas within the chamber to create a plasma,

substrate mounting means for holding the substrate in the plasma,

a power supply for electrically biasing the substrate relative to the plasma, and

means for producing a surface magnetic field confining the plasma within the chamber.

2. The apparatus of claim 1 wherein the means for producing the surface magnetic field is a plurality of permanent magnets surrounding the chamber, which magnets are disposed to establish a multidipolar magnetic field adjacent the chamber walls.

3. The apparatus of claim 2 wherein the chamber is generally cylindrical, having a cylindrical sidewall, a top plate and a bottom plate, and wherein each of the plurality of permanent magnets are elongated and are generally regularly spaced around the cylinder sidewall, each extending substantially along the axis of the cylinder, other elongate permanent magnets being further located along the top and bottom plates in parallel spaced relation and generally extending to the ends of the permanent magnets located around the cylinder sidewalls.

4. The apparatus of claim 2 wherein the chamber has a sidewall in the form of a cylinder, and a top wall and a bottom wall sealing the ends of the cylinder such that the chamber thus formed is capable of maintaining reduced pressure therein, and wherein the plurality of permanent magnets are elongated and generally regularly spaced around the sidewall, extending substantially along the axis of the cylinder, other magnets being further located along the top and bottom walls in generally parallel spaced relation thereon, said top and bottom wall magnets each generally extending normal to and coplanar with two opposed magnets located around the cylinder sidewall.

5. The apparatus of claim 4 wherein the gas pressure within the chamber is maintained at a pressure of about 2×

10^-3 Torr or less.

6. The apparatus of claim 5 wherein the means for ionizing the gas comprises a resistive filament located within the chamber and a source of direct current for heating the filament to cause the emission of electrons from the filament, and a source of direct current biasing the chamber wall, whereby electrons emitted by the filament are repelled from the filament thereby producing a discharge ionizing the gas within the chamber.

7. The apparatus of claim 6 wherein the power supply for biasing the substrate is controllable and operates independent of the filament and discharge power supplies.

8. The apparatus of claim 5 wherein the density of the plasma is maintained at about 10¹² charged particles per cubic centimeter, and said density is uniform throughout the chamber to within ±

1%.

9. The apparatus of claim 6 wherein the substrate is steadily biased by a rectified signal from an audio-oscillator, which signal is not affected by filament and anode power supplies.

10. The apparatus of claim 1 wherein the means for producing the surface magnetic field is a multidipolar arrangement forming generally regularly spaced magnetic field line cusps around the chamber extending substantially parallel to the axis of the chamber.

11. The apparatus of claim 3 wherein the plurality of magnets are elongated ceramic magnets, each elongate magnet producing a magnetic field of about 1 kG, the magnets being fixed about the exterior of the chamber sidewall and the exterior of the top and bottom walls, adjacent parallel magnets presenting opposite poles to the center of the chamber, the surface magnetic field thereby produced being generally disposed adjacent the chamber walls.

12. The apparatus of claim 11 wherein the surface magnetic field is substantially zero about 10 centimeters from the interior of the chamber walls.

13. An apparatus for anisotropic plasma etching of a solid substrate, comprising:

a chamber, said chamber being capable of maintaining a low pressure therein,

substrate mounting means for holding the substrate in the plasma,

means for electrically biasing the substrate relative to the plasma, and

means for producing a multipolar surface magnetic field for confining the plasma in the chamber, whereby the plasma is of substantially unifom density throughout its volume.

14. The apparatus of claim 13 wherein said multipolar surface magnetic field is a multidipolar surface magnetic field.

15. The apparatus of claim 13 wherein the multipolar surface magnetic field has a plurality of line cusps generally regularly spaced about the interior of the chamber and extending substantially parallel to the axis of the chamber.

16. The apparatus of claim 15 wherein the cusps are full line cusps.

17. The apparatus of claim 14 wherein the chamber has a top, bottom and sides, and the means for producing the multidipolar surface magnetic field is a plurality of elongate permanent magnets which are generally regularly spaced in parallel relation about the chamber sides, and along the top and bottom in spaced parallel relation thereon.

18. The apparatus of claim 14 wherein the pressure within the chamber for etching is about 2×

10^-3 Torr or less, and the density of the plasma is about 10¹² charged particles per cubic centimeter.

19. The apparatus of claim 18 wherein the means for producing a plasma includes a filament which emits electrons when heated, a DC power supply for heating the filament, and means for repelling the electrons from the filament to create an electric discharge ionizing the gas, a DC power supply for the repelling means, and wherein the means for biasing the substrate is independent of said DC power supplies and provides a controllable bias to the substrate.

20. An apparatus for anisotropic etching of a substrate, comprising:

a low pressure chamber having sides, a top and a bottom,

means for producing a plasma within the chamber,

substrate mounting means for holding the substrate in the plasma,

controllable means for electrically biasing the substrate relative to the plasma, and

means for producing a multidipolar surface magnetic field substantially confining the plasma within the chamber as a dense plasma having about 10¹² or more charged particles per cubic centimeter, which density is substantially uniform throughout the volume of said plasma to about ±

1%.

21. The apparatus of claim 20 wherein the chamber has a sidewall in the form of a cylinder, and a top wall and a bottom wall sealed to the ends of the cylinder such that the chamber thus formed is capable of maintaining reduced pressure therein, and wherein the plurality of permanent magnets are elongated and generally regularly spaced around the sidewalls extending substantially along the axis of the cylinder, permanent magnets being further located along the top and bottom walls in generally parallel spaced relation thereon, said top and bottom wall magnets generally extending between the respective top and bottom ends of the permanent magnets located around the cylinder sidewall.

22. The apparatus of claim 21 wherein the means for producing a plasma includes a filament which emits electrons when heated, a DC power supply for heating the filament, an anode for repelling and accelerating the electrons so emitted, and a DC power supply for the anode.

23. An apparatus for plasma etching of a substrate comprising:

chamber,

a cathode and cathode power supply for producing ionizing electrons,

an anode and an anode power supply for creating an electrical discharge from the heater element and within the chamber,

a gas within the chamber which is ionized by the discharge thereby creating a plasma,

substrate mounting means for holding the substrate in the plasma,

a controlled power supply communicating with the substrate for electrically biasing the substrate relative to the plasma, and

means for producing a multidipolar surface magnetic field confining the plasma within the chamber.

24. The apparatus of claim 23 wherein the chamber has a top, bottom and sides, and the means for producing the multidipolar surface magnetic field is a plurality of elongate permanent magnets which are generally regularly spaced about the chamber sides in parallel relation, and along the top and bottom in spaced parallel relation thereon, and wherein only low voltage DC power supplies are used for the anode and cathode power supplies.

25. An improved apparatus for plasma etching of a substrate which is carried on a mount within a chamber, wherein an ionizing current is established between a cathode and an anode to thereby ionize a gas confined within the chamber to create a plasma, the substrate being further electrically biasable relative to the plasma, wherein the improvement comprises:

a multidipolar surface magnetic field confining the plasma within the chamber, the surface magnetic field comprising a magnetic boundary to the plasma adjacent the inside chamber wall, whereby a substantially uniform plasma is established within the chamber for etching the substrate therein.

26. The apparatus of claim 25 wherein the surface magnetic field confines the plasma into a dense plasma having about 10¹² or more charted particles per cubic centimeter, which density is substantially uniform throughout the volume of said plasma, and wherein said plasma is maintained at a pressure of about 10^-3 Torr or less, and wherein said ionizing current is produced and maintained by DC voltage supplied to the anode and cathode.

27. The method of plasma etching of a semi-conductor substrate comprising the steps of:

placing a masked semiconductor substrate in a chamber,

admitting a gas into said chamber at low pressure,

producing a multipole surface magnetic field boundary within said chamber,

producing an ionizing discharge within said boundary and thereby ionizing said gas to produce a plasma,

confining said plasma within said magnetic boundary to provide a uniform plasma environment around said semiconductor substrate, and

etching said semiconductor substrate.

28. The method of claim 27 further including the step of electrically biasing the semiconductor substrate relative to the plasma.

29. The method of claim 27 wherein the multipole magnetic boundary is a multidipolar surface magnetic field formed by a plurality of permanent magnets regularly spaced about the chamber presenting alternating poles to the chamber interior.

30. A method of etching materials by plasma treatment comprising the steps of:

introducing a gas into a space defined and surrounded by a surface magnetic field;

generating ionizing electrons within said space;

ionizing said gas with said electrons to produce an etching plasma within said space; and

subjecting a material to be etched to said etching plasma within said space in order to etch said material.

31. The method of claim 30 further including the step of electrically biasing the material to be etched relative to the plasma with a controllable and independent power supply.

32. The method of claim 31 wherein the surface magnetic field is a multidipolar surface magnetic field.

33. An apparatus for etching materials by plasma treatment comprising:

means for producing a surface magnetic field,

means for introducing a gas into a space defined and surrounded by said surface magnetic field,

means for creating an electrical discharge within said space ionizing gas within said space to create a plasma, and

means for holding material to be etched within the plasma.

34. The apparatus of claim 33 further including a controllable power supply for electrically biasing the material to be etched relative to the plasma for substantially anisotropic etching.

35. The apparatus of claim 34 wherein the means for producing said surface magnetic field is a plurality of permanent magnets disposed in a multidipolar arrangement to confine the plasma into a dense plasma having about 10¹² or more charged particles per cubic centimeter, which density is substantially uniform throughout the volume of the plasma, and wherein the plasma is maintained at a pressure of about 2×

10^-3 Torr or less for etching.