Semiconductor device
First Claim
1. A semiconductor device comprising:
- a semiconductor substrate having at least two resistor elements formed therein, wherein said resistor elements formed therein have a specific resistance ratio relative to each other;
an insulation layer formed on a major surface of said semiconductor substrate;
a circuit wiring layer formed on said insulation layer, covering a portion of said insulation layer which corresponds to at least one of said resistor elements; and
a dummy wiring layer formed on said insulation layer, covering that portion of said insulation layer which corresponds to the resistor element or elements not covered by said circuit wiring layer, and wherein said circuit wiring layer causes less stress on said resistance element not covered by said circuit wiring layer than on said resistance element covered by said circuit wiring layer, said resistance ratio of said resistance elements formed therein being stress-dependent.
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Accused Products
Abstract
A semiconductor device comprising a semiconductor substrate having at least two resistor elements, wherein said resistor elements have a specific resistance ratio relative to each other, an insulation layer formed on a major surface of said semiconductor substrate, a circuit wiring layer formed on said insulation layer covering a portion of said insulation layer which corresponds to at least one of said resistor elements, and a dummy wiring layer made of the same material as that of the circuit wiring layer and formed on the insulation layer covering that portion of said insulation layer which corresponds to the resistor element or elements not covered by said circuit wiring layer, and where the ratio of an overlapping area of one resistor element in said circuit wiring layer and an overlapping area of the other resistor element and said dummy wiring layer is equal to a resistance ratio of said resistor elements.
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Citations
18 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate having at least two resistor elements formed therein, wherein said resistor elements formed therein have a specific resistance ratio relative to each other; an insulation layer formed on a major surface of said semiconductor substrate; a circuit wiring layer formed on said insulation layer, covering a portion of said insulation layer which corresponds to at least one of said resistor elements; and a dummy wiring layer formed on said insulation layer, covering that portion of said insulation layer which corresponds to the resistor element or elements not covered by said circuit wiring layer, and wherein said circuit wiring layer causes less stress on said resistance element not covered by said circuit wiring layer than on said resistance element covered by said circuit wiring layer, said resistance ratio of said resistance elements formed therein being stress-dependent. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A semiconductor device of the multilayer type comprising:
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a semiconductor substrate having at least two resistor elements formed therein, wherein said resistor elements formed therein have a specific resistance ratio relative to each other; a multi-layer arrangement of insulation layer-conductive wiring layer in which insulation layers and conductive wiring layers are alternately superimposed in this order on a major surface of said semiconductor substrate; said conductive wiring layer including a circuit wiring layer and a dummy wiring layer; said circuit wiring layer being formed to cover one of said two resistor elements on the lower side of said insulation layer; and said dummy wiring layer being formed to cover said resistor element not covered by said circuit wiring layer and wherein said circuit wiring layer causes less stress on said resistance element not covered by said circuit wiring layer than on said resistance element covered by said circuit wiring layer, said resistance ratio of said resistance elements formed therein being stress-dependent. - View Dependent Claims (11, 12, 13, 14, 15, 16, 17, 18)
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Specification