Light emitting and receiving transistor for operation in alternate _sequence in an optical-fiber telecommunications systems

• US 4,485,391 A
• Filed: 10/28/1981
• Issued: 11/27/1984
• Est. Priority Date: 10/28/1980
• Status: Expired due to Fees

• Current Assignee: Thomson- Csf
• Original Assignee: Thomson-CSF
• Inventors: de Cremoux, Baudouin, Poulain, Pierre, Hirtz, Pierre
• Primary Examiner(s): James, Andrew J.
• Assistant Examiner(s): CARROLL, JAMES J
• Application Number:
  US06/315,862
• Time in Patent Office: 1,126 Days
• Field of Search: 357/16, 357/17, 357/19, 357/30, 357/46, 357/34, 350/96.17, 350/96.20
• US Class Current: 257/80
• CPC Class Codes: H01L 31/1105 the device being a bipolar phototransistor
• CPC Class Codes: H01L 31/125 Composite devices with photosensitive elements and electroluminescent elements within one single body
• CPC Class Codes: H01L 33/0016 having at least two p-n junctions

Abstract

A phototransistor which is capable of operating alternately in the emission mode and in the reception mode can be coupled under favorable conditions to an optical fiber in a telecommunications system. An active layer constitutes the base of the transistor and forms a heterojunction with two layers of opposite conductivity type which constitute the emitter and collector of the transistor. The base contact is formed by a heavily doped region of the same conductivity type as the active layer and defines the useful zone of photon coupling between the optoelectronic component and the entrance face or exit face of the optical fiber.

Claims

1. A light emitting and receiving transistor comprising:

a semiconductor substrate and plural semiconductor layers formed in series on said substrate, including,

a first layer farthest away from said substrate adapted to be coupled to an entrance face or an exit face of an optical fiber, said first layer having a predetermined wide bandgap composition and being of a first conductivity type,

a second layer having a predetermined narrow bandgap composition and being of a second conductivity type opposite that of said first layer formed adjacent said first layer, and

a third layer having a predetermined wide bandgap composition and being of said first conductivity type formed adjacent said second layer;

said second layer being an active layer and having an interface with said first layer forming a first pn heterojunction and an interface with said third layer forming a second pn heterojunction;

said first layer having formed in only a part thereof a heavily doped region of the second conductivity type extending through said first layer to said second layer;

wherein said substrate and said layers form a transistor having base, emitter and collector functions, the transistor base function being performed by said active layer while the emitter function is performed by the first layer and the collector function is performed by said substrate, said active layer, said third layer and said second heterojunction forming a light emission region; and

base, emitter, and collector electrodes respectively connected to said heavily doped region formed in said first layer, said first layer, and said substrate.

2. A transistor according to claim 1 wherein the substrate comprises heavily doped InP of said first conductivity type, said third layer comprises less heavily doped InP than the substrate in said first conductivity type, the second layer or active layer comprises a material of said second conductivity type corresponding to the formula:

space="preserve" listing-type="equation">Ga.sub.x In.sub.1-x As.sub.y P.sub.1-y

with;

0<

x<

0.47

0<

y<

1

where x and y are related to each other in such a manner as to ensure that the crystal lattices of the substrate and of the different layers are compatible, the first layer which is farthest away from the substrate being of InP of the same conductivity type as the third layer.

3. A transistor according to claim 1 wherein the substrate comprises heavily doped GaAs of said first conductivity type, said third layer comprises Ga_1-x Al_x As (with 0.2≦

x≦

0.4) which is less heavily doped than the substrate in the said first conductivity type, said active layer comprises a material of said second conductivity type corresponding to the formula;

space="preserve" listing-type="equation">Ga.sub.1-x Al.sub.x As

with;

0≦

x<

0.1

the first layer having the same composition and the same conductivity type as the third layer.

4. A transistor according to claim 1, comprising:

the substrate comprising heavily doped GaAs of said first conductivity type,

a fourth layer comprising less heavily doped GaAs than the substrate disposed between said substrate and said third layer, said fourth layer formed of said first conductivity type,

said third layer comprising a material of the first conductivity type and corresponding to the formula;

space="preserve" listing-type="equation">Ga.sub.1-x Al.sub.x As

with;

0.2≦

x≦

0.4

said active layer comprising a material of said second conductivity type and having a composition which is similar to that of the third layer, with;

space="preserve" listing-type="equation">0.02≦

x≦

0.1, and

said first layer having the same composition and the same conductivity type as the third layer.

5. A transistor according to claim 1, wherein said transistor has a mesa structure of circular shape, the heavily doped region being implanted or diffused at the center of said structure so as to have a cylindrical shape.

6. A transistor according to claim 1, comprising:

a fourth layer disposed between said substrate and said third layer, said fourth layer formed of said first conductivity type,

wherein the substrate comprises heavily doped InP of said first conductivity type, said fourth layer comprises a less heavily doped material than the substrate and corresponds to the formula;

space="preserve" listing-type="equation">Ga.sub.x'"'"' In.sub.1-y'"'"' As.sub.y'"'"' P.sub.1-y'"'"'

with;

0<

x'"'"'<

0.47

0<

y'"'"'<

1;

said second layer corresponding to the formula;

space="preserve" listing-type="equation">Ga.sub.x"'"'"' In.sub.1-y"'"'"' As.sub.y"'"'"' P.sub.1-y"

wherein

x"<

x'"'"'

y"<

y'"'"'

the parameters (x'"'"', y'"'"') and (x", y") being chosen so that the crystal lattices of the substrate and of the respective layers are compatible, said first layer having the same composition and the same conductivity type as the third layer.