Method of fabricating a multi-layer type semiconductor device including crystal growth by spirally directing energy beam

• US 4,487,635 A
• Filed: 02/14/1983
• Issued: 12/11/1984
• Est. Priority Date: 03/25/1982
• Status: Expired due to Term

• Current Assignee: Director-General of the Agency of Industrial Science and Technology, the Ministry of International Trade and Industry of Japan (Government of Japan)
• Original Assignee: Director-General of the Agency of Industrial Science and Technology, the Ministry of International Trade and Industry of Japan (Government of Japan)
• Inventors: Fuse, Genshu, Kugimiya, Koichi, Akiyama, Shigenobu
• Primary Examiner(s): Roy, Upendra
• Application Number:
  US06/466,301
• Time in Patent Office: 666 Days
• Field of Search: 148/1.5, 148/187, 148/175, 29/576 B, 29/576 T, 427/53.1, 357/91
• US Class Current: 438/152
• CPC Class Codes: H01L 21/02381 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02488 Insulating materials
• CPC Class Codes: H01L 21/02532 Silicon, silicon germanium, germanium
• CPC Class Codes: H01L 21/02675 using laser beams
• CPC Class Codes: H01L 21/02691 Scanning of a beam
• CPC Class Codes: H01L 21/8221 Three dimensional integrated circuits stacked in different levels
• CPC Class Codes: H01L 27/0688 Integrated circuits having a three-dimensional layout

Abstract

A method of producing a superior semiconductor crystallized layer rapidly on a semiconductor substrate with the surface thereof covered with an insulating film is disclosed. An opening, desirably formed by at least two insulating films, is formed at an intersection of scribe lines of the semiconductor substrate. A polycrystal semiconductor film is formed on the insulating films and the opening, after which an energy beam is irradiated spirally on the polycrystal semiconductor film in such a manner that the beam passes at least one opening during each rotation thereof thereby to transform the polycrystal semiconductor film into a crystallized layer for forming a semiconductor element.

Claims

1. A method of fabricating a multilayer-type semiconductor device comprising the steps of:

forming a first-layer semiconductor element on the surface of a semiconductor substrate;

forming at least one rectangular opening in an insulating film located on a scribe line of said semiconductor substrate to expose said semiconductor substrate through said opening, depositing a polycrystal semiconductor film on said insulating film and the semiconductor substrate exposed through said opening;

irradiating an energy beam on said polycrystal semiconductor film spirally relative to said polycrystal substrate, in such a manner that said beam passes said at least one opening during one revolution, thereby to crystallize said polycrystal semiconductor film, the diameter of the irradiated energy beam being larger than the maximum length of the opening, the semiconductor substrate exposed through said opening serving to provide a seed crystal for crystallization of said polycrystal semiconductor film; and

forming a second-layer semiconductor element on said crystallized layer.

2. A method of fabricating a multilayer-type semiconductor device according to claim 1, wherein said insulating film has a first layer and a second layer, a first rectangular opening having a longitudinal axis is formed in a first insulating film, a second insulating film is formed on the first insulating film, and a second rectangular opening having a longitudinal axis substantially perpendicular to the longitudinal axis of said first rectangular opening is formed in the second insulating film so as to be superimposed on the first rectangular opening of said first insulating film, thereby forming said opening from the superimposed portions of said first and second rectangular openings.

3. A method of fabricating a multilayer-type semiconductor device according to claim 1, wherein said step of forming a polycrystal semiconductor includes the process of heat tratment from 700°

to 900°

C. after depositing said polycrystal semiconductor film.

4. A method of fabricating a multilayer-type semiconductor device according to claim 1, wherein a plurality of openings are formed on the scribe line at pitches of not more than one half of the diameter of the energy beam irradiated on the scribe line between the intersections of adjacent two scribe lines.

5. A method of fabricating a multilayer-type semiconductor device according to claim 2, wherein said insulating film includes a silicon nitride film layer and a silicon oxide film layer.

6. A method according to claim 1, wherein said semiconductor substrate is made of a silicon single crystal, and said polycrystal semiconductor is made of a polycrystal silicon.

7. A method according to claim 1, wherein said crystallized layer is made of a silicon single crystal.

8. A method according to claim 1, wherein an insulating film is selectively formed on the crystallized layer.

9. A method according to claim 1, wherein said semiconductor element is a MOS transistor.

10. A method of fabricating a multilayer-type semiconductor device comprising the steps of:

forming a first-layer semiconductor element on the surface of each of a plurality of semiconductor substrates disposed on a supporting base;

forming at least one rectangular opening in an insulating film located on a scribe line of said semiconductor substrate to expose said semiconductor substrate through said opening;

depositing a polycrystal semiconductor film on said insulating film and the semiconductor substrate exposed through said opening;

irradiating an energy beam on said polycrystal semiconductor film spirally relative to said semiconductor substrate, in such a manner that said beam passes said at least one opening during one revolution, thereby to crystallize said polycrystal semiconductor film, the diameter of the irradiated energy beam being larger than the maximum length of the opening, the semiconductor substrate exposed through said opening serving to provide a seed crystal for crystallization of said polycrystal semiconductor film; and

forming a second-layer semi-conductor element on said crystallized layer.