Hall effect device test circuit

• US 4,491,794 A
• Filed: 10/29/1982
• Issued: 01/01/1985
• Est. Priority Date: 10/29/1982
• Status: Expired due to Fees

• Current Assignee: AG Communication Systems Corp. (Nokia Corporation)
• Original Assignee: GTE Automatic Electric Incorporated (Verizon Communications Inc.)
• Inventors: Van Husen, Hendrik W., Daley, William J.
• Primary Examiner(s): Levy, Stewart J.
• Application Number:
  US06/437,670
• Time in Patent Office: 795 Days
• Field of Search: 324/158 R, 324/158 D, 324/202, 324/228, 324/252, 338/32 H
• US Class Current: 324/228
• CPC Class Codes: G01R 33/07 Hall effect devices
• CPC Class Codes: G01R 35/00 Testing or calibrating of apparatus covered by the other groups of this subclass

Abstract

A Hall effect device test circuit which detects Hall effect device operate and release point failures. A magnetic field circuit, an analog-to-digital conversion circuit, a storage circuit, a comparison circuit and a visual indicator circuit are included. The magnetic field circuit causes the Hall effect device under test to switch between its operate and release states. The analog-to-digital conversion circuit provides a digital value, representative of the intensity of the magnetic field existing at the time of switching. These digital values are then stored in the storage circuit. The comparison circuit compares the stored switching values to predetermined thresholds and causes an appropriate visual pass/fail visual signal to be provided.

Claims

1. A Hall effect device test circuit for use in a test system including a source of a power signal, said test circuit comprising:

magnetic field means connected to said source and operative in response to said power signal to periodically provide a magnetic field of varying intensity;

voltage reference means connected to said source and operative in response to said power signal to periodically provide a sample voltage of varying magnitude and proportional to the intensity of said magnetic field;

a Hall effect device connected in magnetic field proximity to said magnetic field means and operative in response to each occurrence of said magnetic field of a first predetermined intensity to provide an electrical signal of a first characteristic, and operative in response to each occurrence of said magnetic field of a second predetermined intensity to provide an electrical signal of a second characteristic;

conversion means connected to said Hall effect device and said voltage reference means, and operative in response to each electrical signal of said first characteristic and said sample voltage to provide a first digital representation of said sample voltage;

said conversion means further operative in response to each electrical signal of said second characteristic and said sample voltage to provide a second digital representation of said sample voltage;

first threshold means operative to provide a first predetermined digital signal;

second threshold means operative to provide a second predetermined digital signal;

third threshold means operative to provide a third predetermined digital signal;

fourth threshold means operative to provide a fourth predetermined digital signal;

comparison means connected to said conversion means and operative in response to said electrical signal of said first characteristic being less than or equal to said first predetermined digital signal to provide a first operate-pass signal and further operative in response to said electrical signal of said first characteristic being greater than or equal to said second predetermined digital signal to provide a second operate-pass signal; and

further operative in response to said electrical signal of said second characteristic being less than or equal to said third predetermined digital signal to provide a first release-pass signal, and further operative in response to said electrical signal of said second characteristic being greater than or equal to said fourth predetermined digital signal to provide a second release-pass signal; and

first indicating means connected to said comparison means and operative in response to said first and second operate-pass signal to provide a sensible operate-pass signal, and further operative in response to said first and second release-pass signals to provide a sensible release-pass signal.

2. A Hall effect device test circuit as claimed in claim 1, wherein said first indicating means is further operative to provide a gated operate-pass signal associated with said sensible operate-pass signal and further operative to provide a gated release-pass signal associated with said sensible release-pass signal, said Hall effect device test circuit further comprising:

second indicating means connected to said first indicating means, and operative in response to said gated operate-pass signal and said gated release-pass signal to provide a sensible HED pass signal.

3. A Hall effect device test circuit as claimed in claim 1, wherein said first indicating means comprises:

a first AND gate and a first light emitting diode connected thereto, and operative to provide said sensible operate-pass signal; and

second AND gate and a second light emitting diode connected thereto, and operative to provide said sensible release-pass signal.

4. A Hall effect device test circuit as claimed in claim 2, wherein said second indicating means comprises:

an AND gate and a light emitting diode connected thereto.

5. A Hall effect device test circuit as claimed in claim 1, wherein there is further included:

second indicating means operative in response to said electrical signal of said first characteristic being either greater than said first predetermined digital signal or less than said second predetermined digital signal, to provide a sensible operate-fail signal; and

further operative in response to said electrical signal of said second characteristic being either greater than said third predetermined digital signal or less than said fourth predetermined digital signal to provide a sensible release-fail signal.

6. A Hall effect device test circuit as claimed in claim 5, wherein said second indicating means is further operative to provide a gated operate-fail signal associated with said sensible operate-fail signal, and further operative to provide a gated release-fail signal associated with said sensible release-fail signal, said Hall effect device test circuit further comprising:

third indicating means connected to said second indicating means, and operative in response to either said gated operate-fail signal or said gated release-fail signal to provide a sensible HED fail signal.

7. A Hall effect device test circuit as claimed in claim 6, wherein said second indicating means comprises:

a first OR gate and a first light emitting diode connected thereto and operative to provide said sensible operate-fail signal; and

a second OR gate and a light emitting diode connected thereto, and operative to provide said sensible release-fail signal.

8. A Hall effect device test circuit as claimed in claim 6, wherein said third indicating means comprises an OR gate and a light emitting diode connected thereto.

9. A Hall effect device test circuit as claimed in claim 1, wherein said comparison means comprises:

a first binary comparator operative to compare said electrical signal of said first characteristic to said first predetermined digital signal;

a second binary comparator operative to compare said electrical signal of said first characteristic to said second predetermined digital signal;

a third binary comparator operative to compare said electrical signal of said second characteristic to said third predetermined digital signal; and

a fourth binary comparator operative to compare said electrical signal of said second characteristic to said fourth predetermined digital signal.

10. A Hall effect device test circuit as claimed in claim 1, wherein said conversion means comprises:

pulsing means connected to said Hall effect device and operative in response to said electrical signals of said first and second characteristics to provide pulsing signals of first and second characteristics;

an analog-to-digital converter connected to said pulsing means and said sample voltage resistor and operative in response to said pulsing signal of said first characteristic and said sample voltage to provide a first digital signal, and further operative in response to said pulsing signal of said second characteristic and said sample voltage to provide a second digital signal; and

further operative in response to each of said pulsing signals to provide a status signal; and

gating means connected to said pulsing means and said analog-to-digital converter and operative in response to said pulsing signal of said first characteristic and said status signal to provide a first gating signal and further operative in response to said pulsing signal of said second characteristic and said status signal to provide a second gating signal;

first and second storage means connected to said analog-to-digital conversion means and said gating means and operative in response to said first and second gating signals to store said digital signals of said first and second characteristics, respectively, and provide said first and second digital representations of said sample voltage, respectively.

11. A Hall effect device test circuit as claimed in claim 10, wherein there is further included third storage means connected between said pulsing means and said gating means and operative in response to said pulsing signals of said first and second characteristics to provide level signals of first and second characteristics, respectively;

and

said gating means operative in response to said status signal and said level signal of said first characteristic, and further operative in response to said status signal and said level signal of said second characteristic to provide said gating signals of first and second characteristics, respectively.

12. A Hall effect device test circuit as claimed in claim 11, wherein said third storage means comprises a latch circuit.

13. A Hall effect device test circuit as claimed in claim 10, wherein said pulsing means comprises first and second monostable miltivibrators operative to provide said first and second pulsing signals, respectively.

14. A Hall effect device test circuit as claimed in claim 1, wherein each of said threshold means comprises a dual-inline-package switch.

15. A Hall effect device test circuit as claimed in claim 10, wherein said first and second storage means comprises first and second groups of D-type flip-flops operative to provide said first and second digital representations of said sample voltage, respectively.