×

RAM Utilizing offset contact regions for increased storage capacitance

  • US 4,493,056 A
  • Filed: 06/30/1982
  • Issued: 01/08/1985
  • Est. Priority Date: 06/30/1982
  • Status: Expired due to Fees
First Claim
Patent Images

1. A memory cell comprising:

  • a transfer device having a control electrode and an offset contact region, the control electrode being electrically connected to a word line, the contact region being electrically connected to a first bit line;

    a storage capacitance operatively connectable to said first bit line by selective actuation of the control electrode of said transfer device; and

    a second bit line spaced apart from said first bit line and capacitively coupled to said storage capacitance, wherein said second bit line substantially overlies said storage capacitance and said control electrode, and said first bit line substantially overlies said contact region.

View all claims
  • 1 Assignment
Timeline View
Assignment View
    ×
    ×