Optical emission spectroscopy end point detection in plasma etching

• US 4,493,745 A
• Filed: 01/31/1984
• Issued: 01/15/1985
• Est. Priority Date: 01/31/1984
• Status: Expired due to Term

• Current Assignee: International Business Machines Corporation
• Original Assignee: International Business Machines Corporation
• Inventors: Chen, Lee, Khoury, Henri A., Seymour, Harlan R.
• Primary Examiner(s): Powell, William A.
• Application Number:
  US06/575,611
• Time in Patent Office: 350 Days
• Field of Search: 156/626, 156/627, 156/643, 156/646, 156/657, 156/653, 156/345, 156/644, 156/659.1, 204/192 E, 204/298, 356/316, 356/326, 356/338, 356/346, 356/437, 356/445
• US Class Current: 438/9
• CPC Class Codes: C23F 4/00 Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge

Abstract

A method for etching a batch of semiconductor wafers to end point using optical emission spectroscopy is described. The method is applicable to any form of dry plasma etching which produces an emission species capable of being monitored. In a preferred embodiment, as well as a first alternative embodiment, a computer simulation is performed using an algorithm describing the concentration of the monitored etch species within the etching chamber as a function of time. The simulation produces a time period for continuing the etching process past a detected time while monitoring the intensity of emission of the etch species. In a second alternative embodiment, this latter time period is calculated using mathematical distributions describing the parameters of the etching process. In all three embodiments, the actual time that end point of an etching process is reached is closely approximated. In this manner, all wafers in a batch of wafers being etched reach end point while at the same time, the amount of over etching is greatly minimized.

Claims

1. A method of etching a layer of material to end point, comprising the steps of:

monitoring an intensity of emission of a species produced during an etching process;

detecting a time at which a change in such intensity of emission occurs;

calculating a time period extending in length from the time of said change to end point; and

terminating the etching process at the conclusion of said time period, whereby said layer of material is etched to end point.

2. A method of etching to end point a layer of material on a plurality of semiconductor wafers, said plurality of semiconductor wafers having a substantially Gaussian thickness distribution, said method comprising the steps of:

monitoring an intensity of emission of a species produced during an etching process;

detecting a time at which a change in such intensity of emission occurs;

calculating a time period extending in length from a time of theoretical end point on a first one of said plurality of semiconductor wafers to a time of theoretical end point on a second one of said plurality of semiconductor wafers, said first one having a layer thickness essentially equal to the minimum layer thickness in said substantially Gaussian thickness distribution and said second one having a layer thickness essentially equal to the maximum layer thickness in said substantially Gaussian thickness distribution;

continuing the etching process past the time at which such change occurs for a length of time corresponding to said time period;

and terminating the etching process at the conclusion of said time period, whereby said layer of material is etched to end point on substantially all of said plurality of semiconductor wafers.

4. A method according to claim 2 wherein said calculating step further comprises the steps of:

determining a substantially Gaussian etch distribution to characterize a rate at which said etching process is carried out;

estimating an average etch rate from said substantially Gaussian etch distribution;

estimating a nominal thickness of said layer of material on said plurality of semiconductor devices from said substantially Gaussian thickness distribution;

computing a mean time to theoretical end point for said plurality of semiconductor wafers using said nominal thickness and said average etch rate;

finding the standard deviation of the time to theoretical end point for said plurality of semiconductor wafers using said mean time and said substantially Gaussian thickness and etch rate distributions;

determining minimum and maximum times to theoretical end point for said plurality of semiconductor wafers using said mean etch time and said standard deviation; and

subtracting the minimum time to theoretical end point from the maximum time to theoretical end point, thereby calculating said time period.

3. A method of etching to end point a layer of material on a plurality of semiconductor wafers in a chamber of the type having a pump for regulating pressure within the chamber, said plurality of semiconductor wafers having a substantially Gaussian thickness distribution, said method comprising the steps of:

monitoring an intensity of emission of a species produced during an etching process;

detecting a time at which an inflection point in such intensity of emission occurs;

calculating a time period extending in length from a time of theoretical inflection point to a time at which theoretical end point occurs on one of said plurality of semiconductor wafers, said one having a layer thickness essentially equal to the maximum thickness in said substantially Gaussian thickness distribution;

continuing the etching process past the time at which said inflection point is detected for a length of time corresponding to said time period; and

terminating the etching process at the conclusion of said time period, whereby said layer of material is etched to end point on substantially all of said plurality of semiconductor wafers.

5. A method according to claim 3 wherein said calculating step further comprises the steps of:

determining pump half-life;

determining a substantially Gaussian etch distribution to characterize a rate at which said etching process is carried out;

estimating an average etch rate from said substantially Gaussian etch distribution;

estimating a nominal thickness of said layer of material on said plurality of semiconductor devices from said substantially Gaussian thickness distribution;

computing a mean time to theoretical end point for said plurality of semiconductor wafers using said nominal thickness and said average etch rate;

finding the standard deviation of the time to theoretical end point for said plurality of semiconductor wafers using said mean time and said substantially Gaussian thickness and etch rate distributions;

numerically solving for the time at which theoretical end point occurs on said one of said plurality of semiconductor wafers using the equation ##EQU7## wherein G (t)=1/σ

√

2π

exp-(t-t₀)² /2σ

t²,

σ

is the standard deviation,

t₀ is the mean time to theoretical end point for said plurality of wafers,

n (t) is the concentration of monitored species, where said concentration is proportional to the intensity of said monitored species,

λ

is the reciprocal of pump half life, and

t₁ is the time at which theoretical end point occurs on said one of said plurality of semiconductor wafers;

solving n (t+dt) for the time, t_i, at which the theoretical inflection point occurs; and

subtracting the theoretical inflection point time, t_i, from the time at which theoretical end point occurs on said one of said plurality of semiconductor wafers, t₁, thereby calculating said time period.

6. A method of etching to end point a layer of material on a plurality of semiconductor wafers in a chamber of the type having a pump for regulating pressure within the chamber, said plurality of semiconductor wafers having a substantially Gaussian thickness distribution, said method comprising the steps of:

monitoring an intensity of emission of a species produced during an etching process;

detecting a first time at which end point occurs on a first one of said plurality of semiconductor wafers, said first one having a layer thickness essentially equal to the minimum thickness in said substantially Gaussian thickness distribution;

detecting a second time at which an inflection point in such intensity of emission occurs;

calculating a time period extending in length from the time of said inflection point to a time at which end point occurs on a second one of said plurality of semiconductor wafers, said second one having a layer thickness essentially equal to the maximum thickness in said substantially Gaussian thickness distribution;

continuing the etching process past the time at which said inflection point is detected for a length of time corresponding to said time period; and

terminating the etching process at the conclusion of said time period, whereby said layer of material is etched to end point on substantially all of said plurality of semiconductor wafers.

7. A method according to claim 6 wherein said calculating step further comprises the steps of:

determining pump half life;

determining a substantially Gaussian etch distribution to characterize a rate at which said etching process is carried out;

estimating an average etch rate from said substantially Gaussian etch distribution;

estimating a nominal thickness of said layer of material on said plurality of semiconductor wafers from said substantially Gaussian thickness distribution;

computing a mean time to theoretical end point for said plurality of semiconductor wafers using said nominal thickness and said average etch rate;

finding the standard deviation of the time to theoretical end point for said plurality of semiconductor wafers using said mean time and said substantially Gaussian thickness and etch rate distributions;

numerically solving for minimum and maximum times to theoretical end point for said first one and said second one, respectively, of said plurality of semiconductor wafers using the equation ##EQU8## wherein G (t)=1/σ

√

2π

epx-(t-t₀)² /2σ

t²,

σ

is standard deviation,

t₀ is mean time to theoretical end point for said plurality of wafers,

n (t) is the concentration of monitored species, where said concentration is proportional to the intensity of said monitored species,

λ

is the reciprocal of pump half life, and

t₁ is the maximum time theoretical end point on said second one of said plurality of semiconductor wafers;

solving n (t+dt) for a time, t_i, at which the theoretical inflection point, occurs;

subtracting the time at which said theoretical inflection point occurs from the time at which said maximum theoretical end point occurs, thereby calculating a first theoretical time period;

subtracting the time at which said minimum theoretical end point occurs from the time at which said theoretical inflection point occurs, thereby calculating a second theoretical time period;

taking the ratio of said first theoretical time period to said second theoretical time period, thereby calculating an etch constant;

subtracting the detected time at which end point occurs on said first one of said plurality of semiconductor wafers from the detected time at which an inflection point occurs, thereby calculating an etch period; and

multiplying said etch period times said etch constant, thereby calculating said time period.