Capacitive pressure sensor

• US 4,495,820 A
• Filed: 09/28/1982
• Issued: 01/29/1985
• Est. Priority Date: 09/30/1981
• Status: Expired due to Term

• Current Assignee: Hitachi, Ltd.
• Original Assignee: Hitachi, Ltd.
• Inventors: Shimada, Satoshi, Suzuki, Seikou, Yamada, Kazuji, Nishihara, Motohisa
• Primary Examiner(s): Woodiel, Donald O.
• Assistant Examiner(s): Kovalick, Vincent P.
• Application Number:
  US06/426,084
• Time in Patent Office: 854 Days
• Field of Search: 73/724, 73/718, 361/283, 357/26, 307/303, 307/308
• US Class Current: 73/724
• CPC Class Codes: G01L 9/0073 using a semiconductive diaphragm
• CPC Class Codes: H01G 5/16 using variation of distance between electrodes
• CPC Class Codes: H10N 39/00 Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00

Abstract

A capacitive pressure sensor and its manufacturing method are disclosed. An amplifier is formed on the main surface of a first semiconductor substrate by a diffusion process, and its surface is covered with an insulating film. An electrode is vapor-deposited on the surface of the amplifier and electrically connected to the amplifier through a through hole formed in the insulating film. For forming a diaphragm, the surface of a second semiconductor substrate disposed facing the electrode to form a capacitor, which is opposite to the surface of the second semiconductor substrate facing the electrode, is partially etched away to form a depression. The first and second semiconductor substrates are anodically bonded to each other using a glass layer.

Claims

1. A capacitive pressure sensor comprising:

a first semiconductor substrate with an amplifier formed on the main surface;

an insulating layer formed on said amplifier;

at least one electrode formed on said amplifier through said insulating layer and electrically connected to said amplifier;

a second semiconductor substrate serving as a diaphragm and disposed in opposition to said electrode for forming a capacitor; and

a glass layer anodically bonding said first and second semiconductor substrates to each other in the region of peripheral portions of said electrode and said diaphragm.

2. A capacitive pressure sensor according to claim 1, wherein said glass layer is a sputtered glass.

3. A capacitive pressure sensor according to claim 1, wherein said glass layer is a chemical vapor deposited glass.

4. A capacitive pressure sensor according to claim 1 or 2, further comprising a resistor network arranged for being trimmed and being formed in a surface region of said first semiconductor substrate except the surface region occupied by said second semiconductor surface.

5. A capacitive pressure sensor according to claim 1 or 2, wherein in said second semiconductor substrate a diaphragm is formed by forming a depression on the surface opposite to that facing said electrode.

6. A capacitive pressure sensor according to claim 1 or 2, wherein said electrode is connected to said amplifier through a through hole provided in said insulating layer.

7. A capacitive pressure sensor according to claim 1 or 2, wherein said electrode includes a central electrode and a peripheral electrode formed around said central electrode.

8. A capacitive pressure sensor according to claim 1, wherein said amplifier is formed on the main surface of said first semiconductor substrate by diffusion, said insulating layer formed on said amplifier being provided with an etched through hole for enabling connection of said electrode to said amplifier, said electrode being a vapor-deposited electrode, and said second semiconductor substrate having a diaphragm formed therein by etching the surface of said second semiconductor substrate opposite to the surface thereof facing said electrode so as to form a depression.

9. A method of manufacturing a capacitive pressure sensor comprising the steps of:

forming an amplifier on the main surface of a first semiconductor substrate and forming an insulating film on the surface of said amplifier;

forming at least one electrode on said insulating film and electrically connecting said electrode to said amplifier;

forming a diaphragm in a second semiconductor substrate and disposing said diaphragm in opposition to said electrode to form a capacitor between said diaphragm and said electrode; and

bonding anodically said first and second semiconductor substrates using a glass layer.

10. A method of manufacturing a capacitive pressure sensor according to claim 9, further comprising the step of forming a resistor network for trimming in the surface region of said first semiconductor substrate other than the surface region thereof occupied by said second semiconductor substrate, and the step of trimming a part of the said resistor network.

11. A method of manufacturing a capacitive pressure sensor according to claim 9 or 10, wherein a plurality of sensors with the same structure are simultaneously formed on said first and second semiconductor substrates in said steps, and further comprising a step for pelletizing the resultant structure into respective sensors.

12. A method of manufacturing a capacitive pressure sensor according to claim 9, wherein said glass layer is formed by sputtering.

13. A method of manufacturing a capacitive pressure sensor according to claim 9, wherein said glass layer is formed by chemical vapor deposition.

14. A method of manufacturing a capacitive pressure sensor according to claim 9, wherein said amplifier is formed on the main surface of said first semiconductor substrate by a diffusion process, said insulating film on the surface of said amplifier is etched to form a through hole therein, said at least one electrode being vapor-deposited on said insulating film and electrically connected to said amplifier through said through hole, said diaphragm in said second semiconductor substrate being formed by etching the surface of said second semiconductor substrate opposite to the surface thereof facing said electrode.