Capacitive pressure sensor
First Claim
1. A capacitive pressure sensor comprising:
- a first semiconductor substrate with an amplifier formed on the main surface;
an insulating layer formed on said amplifier;
at least one electrode formed on said amplifier through said insulating layer and electrically connected to said amplifier;
a second semiconductor substrate serving as a diaphragm and disposed in opposition to said electrode for forming a capacitor; and
a glass layer anodically bonding said first and second semiconductor substrates to each other in the region of peripheral portions of said electrode and said diaphragm.
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Accused Products
Abstract
A capacitive pressure sensor and its manufacturing method are disclosed. An amplifier is formed on the main surface of a first semiconductor substrate by a diffusion process, and its surface is covered with an insulating film. An electrode is vapor-deposited on the surface of the amplifier and electrically connected to the amplifier through a through hole formed in the insulating film. For forming a diaphragm, the surface of a second semiconductor substrate disposed facing the electrode to form a capacitor, which is opposite to the surface of the second semiconductor substrate facing the electrode, is partially etched away to form a depression. The first and second semiconductor substrates are anodically bonded to each other using a glass layer.
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Citations
14 Claims
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1. A capacitive pressure sensor comprising:
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a first semiconductor substrate with an amplifier formed on the main surface; an insulating layer formed on said amplifier; at least one electrode formed on said amplifier through said insulating layer and electrically connected to said amplifier; a second semiconductor substrate serving as a diaphragm and disposed in opposition to said electrode for forming a capacitor; and a glass layer anodically bonding said first and second semiconductor substrates to each other in the region of peripheral portions of said electrode and said diaphragm. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A method of manufacturing a capacitive pressure sensor comprising the steps of:
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forming an amplifier on the main surface of a first semiconductor substrate and forming an insulating film on the surface of said amplifier; forming at least one electrode on said insulating film and electrically connecting said electrode to said amplifier; forming a diaphragm in a second semiconductor substrate and disposing said diaphragm in opposition to said electrode to form a capacitor between said diaphragm and said electrode; and bonding anodically said first and second semiconductor substrates using a glass layer. - View Dependent Claims (10, 11, 12, 13, 14)
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Specification