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Gas feed for reactive ion etch system

  • US 4,496,423 A
  • Filed: 11/14/1983
  • Issued: 01/29/1985
  • Est. Priority Date: 11/14/1983
  • Status: Expired due to Fees
First Claim
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1. In a system for etching semi-conductor wafers by means of reactive ions in a gas plasma, the plasma being energized by an electrode which is adjacent the wafer and through which the gas is introduced, a gas feed comprisinga gas feed line which is electrically grounded;

  • a hollow insulating housing;

    at one end of said housing, a porous metal plug which is in contact with said electrode;

    at the other end of said housing;

    a second porous metal plug through which gas is fed from said feed line;

    filling the space between said plugs, a porous insulating material.

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