Technique for determining the end point of an etching process

• US 4,496,425 A
• Filed: 01/30/1984
• Issued: 01/29/1985
• Est. Priority Date: 01/30/1984
• Status: Expired due to Fees

• Current Assignee: AT&T Teleholdings Incorporated (AT&T, Inc.)
• Original Assignee: AT&T Teleholdings Incorporated (AT&T, Inc.)
• Inventors: Kuyel, Birol
• Primary Examiner(s): Powell, William A.
• Application Number:
  US06/575,378
• Time in Patent Office: 365 Days
• Field of Search: 156/626, 156/627, 156/643, 156/646, 156/656, 156/665, 156/345, 204/164, 204/192 E, 204/298, 356/445, 356/448
• US Class Current: 438/9
• CPC Class Codes: C23F 4/00 Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
• CPC Class Codes: G01B 11/06 for measuring thickness ; e.g. of sheet material thickness measurement by thermal means G01B21/085
• CPC Class Codes: H01J 37/32935 Monitoring and controlling tubes by information coming from the object and/or discharge

Abstract

A method for detecting the end point of the plasma etching of a pattern (36) in an aluminum layer (33) on a silicon wafer (16). The pattern (36) and portions of a Fresnel zone plate (30) are simultaneously etched in the aluminum layer (33). The intensity of the light reflected from the Fresnel zone plate (30) during plasma etching is monitored and the etching process terminated when the intensity falls below a predetermined level.

Claims

1. A method for detecting the end point of the etching of a pattern formed in a layer of material by etching through openings in an etch resistant coating on the surface of the material, the method comprising the steps of:

simultaneously etching;

(1) the material, through the openings, and (2) a Fresnel zone plate, located proximate the pattern, comprised of a plurality of annular zones which are alternately formed of the etch resistant material and the exposed material to be etched;

monitoring light reflected from the Fresnel zone plate during etching; and

terminating the etch process when the intensity of light reflected from the Fresnel zone plate falls below a predetermined level.

2. The method as set forth in claim 1, wherein the light monitoring step comprises:

directing a beam of light towards the Fresnel zone plate; and

detecting the intensity of the light reflected from the plate.

3. The method as set forth in claim 1, wherein:

the etch resistant material is photoresist that has a low reflectivity to the light while the material to be etched is highly reflective to the light.

4. The method as set forth in claim 1, wherein:

etching is accomplished by plasma etching.

5. The method as set forth in claim 1, wherein:

etching is accomplished by chemical etching.

6. The method as set forth in claim 3, wherein:

the layer of material is aluminum which coats a P-glass layer over a semiconductor substrate, the P-glass having a low reflectivity to light.

7. The method as set forth in claim 1, wherein the layer of material is comprised of a plurality of different layers, each having a different reflectivity, the method comprising:

adjusting the parameters of the etching process for each layer as it is being etched based upon the intensity of the light detected.

8. The method as set forth in claim 7, wherein:

etching is accomplished by plasma etching.

9. The method as set forth in claim 7, wherein:

etching is accomplished by chemical etching.

10. The method as set forth in claim 7, wherein:

the layer of material covers a P-glass layer over a semiconductor substrate, the P-glass having low reflectivity; and

the layer of material is comprised of an aluminum layer having an aluminum oxide coating layer thereon.

11. A method for detecting the end point of the etching of a pattern in an aluminum layer that coats a P-glass layer on a semiconductor substrate, the pattern being etched through openings in a photoresist coating on the aluminum layer, comprising the steps of:

simultaneously plasma etching;

(1) the pattern, and (2) a Fresnel zone plate comprised of a plurality of annular zones which are alternately formed of the photoresist and exposed portions of the aluminum layer;

monitoring light reflected from the Fresnel zone plate during plasma etching; and

terminating the plasma etching process when the intensity of the light reflected from the Fresnel zone plate falls below a predetermined level.

12. The method as set forth in claim 11, wherein the light monitoring step comprises the steps of:

directing a beam of light towards the Fresnel zone plate; and

detecting the intensity of the light reflected from the plate.

13. The method as set forth in claim 12, wherein the aluminum layer has an oxide coating layer thereon which has a different reflectivity than the aluminum layer, the method comprising:

adjusting the parameters of the etching process for each layer as it is being etched based upon the intensity of the light detected.

14. The method as set forth in claim 11, wherein:

the semiconductor substrate is a silicon wafer.