Realization of a thin film solar cell with a detached reflector

• US 4,497,974 A
• Filed: 11/22/1982
• Issued: 02/05/1985
• Est. Priority Date: 11/22/1982
• Status: Expired due to Fees

• Current Assignee: Exxon Research and Engineering Company (Exxon Mobil Corporation)
• Original Assignee: Exxon Research and Engineering Company (Exxon Mobil Corporation)
• Inventors: Deckman, Harry W., Witzke, Horst, Wronski, Christopher
• Primary Examiner(s): Weisstuch, Aaron
• Application Number:
  US06/443,197
• Time in Patent Office: 806 Days
• Field of Search: 136/256, 136/258 AM, 136/259, 357/30
• US Class Current: 136/259
• CPC Class Codes: H01L 31/02168 the coatings being antireflective or having enhancing optical properties for the solar cells
• CPC Class Codes: H01L 31/02363 of the semiconductor body itself, e.g. textured active layers
• CPC Class Codes: H01L 31/02366 of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
• CPC Class Codes: H01L 31/056 the light-reflecting means being of the back surface reflector [BSR] type
• CPC Class Codes: Y02E 10/52 PV systems with concentrators

Abstract

The present invention is an optically enhanced solar cell having a detached reflector. The optically enhanced solar cell includes a semiconductor material bounded on each side by transparent electrical contacts and an optional antireflection coating with the surface of at least one of these layers being textured. Light is reflected in the cell by a reflector which is detached (i.e., spaced) from the enhanced cell using a layer of dielectric material.

Claims

1. An optically enhanced photovoltaic device comprising:

(a) A layer of semiconductor material contacted on its upper and lower major surfaces by respective top and bottom layers of transparent electrical conductors each having a top and bottom surface with at least one of said surfaces being textured so as to scatter incident light randomly;

(b) a layer of transparent dielectric material fixed to said bottom surface of said bottom layer of said transparent electrical conductor;

(c) a metal layer fixed to said layer of transparent dielectric material such that radiation incident on said top layer of transparent conductor and which passes through said bottom layer of transparent conductor and said layer of transparent dielectric material is reflected by said metal layer.

2. The device of claim 1 wherein the interface between said dielectric layer and said metal layer is substantially flat.

3. The device of claim 2 wherein said metal has a reflectivity of greater than 95%.

4. The device of claim 3 wherein said metal is selected from the group consisting of copper, silver, gold, and aluminum.

5. The device of claim 2 wherein the interface between said dielectric layer and said metal layer is substantially parallel to the plane defined by the bottom surface of said bottom transparent conductor.

6. The device of claim 1 wherein said dielectric layer has an index of refraction of less than 2.

7. The device of claim 1 wherein said top layer of said transparent conductor further comprises a layer of anti-reflection material on the side away from the semiconductor layer.

8. The device of claim 1 wherein all of said textured surfaces have characteristic scale length of the order of the wavelength of light in said semiconductor material.

9. The device of claim 1 wherein said semiconductor material is amorphous silicon.

10. The device of claim 1 wherein at least one of said upper and lower major surfaces of said semiconductor material is textured.