Reference voltage circuit

• US 4,498,040 A
• Filed: 11/30/1982
• Issued: 02/05/1985
• Est. Priority Date: 04/26/1977
• Status: Expired due to Term

• Current Assignee: Kabushiki Kaisha Suwa Seikosha
• Original Assignee: Kabushiki Kaisha Suwa Seikosha
• Inventors: Tatsushi, Asakawa, Shinji, Morozumi
• Primary Examiner(s): SHOOP JR, WILLIAM M
• Application Number:
  US06/445,402
• Time in Patent Office: 798 Days
• Field of Search: 307/296 R, 307/297, 307/304, 307/360-362, 323/281, 323/297, 323/299, 323/303, 323/313, 323/314, 368/204, 368/205
• US Class Current: 365/185.17
• CPC Class Codes: G01R 19/16571 comparing AC or DC current with one threshold, e.g. load current, over-current, surge current or fault current G01R19/16514, G01R19/16519, G01R19/16528, G01R19/16533, G01R19/1659 take precedence; measuring currents by using elements sensitive to the magnetic field generated G01R15/14; measuring earth resistance G01R27/18; testing for leakage or short circuits in electrical apparatus G01R31/52
• CPC Class Codes: G01R 35/005 Calibrating; Standards or reference devices, e.g. voltage or resistance standards, "golden" references G01R33/0035, G01R35/002 take precedence
• CPC Class Codes: G04C 10/04 with means for indicating the condition of the power supply in general G01R31/36
• CPC Class Codes: G04G 19/06 Regulation
• CPC Class Codes: G05F 3/24 wherein the transistors are of the field-effect type only G05F3/205, G05F3/26, G05F3/30 take precedence
• CPC Class Codes: H01L 27/088 the components being field-effect transistors with insulated gate
• CPC Class Codes: H01L 27/092 complementary MIS field-effect transistors

Abstract

A voltage detection integrated circuit including a voltage regulation circuit for controlling the operation thereof is provided. The voltage detection integrated circuit includes a reference voltage circuit for producing a predetermined reference voltage, a voltage converter for converting a detected voltage for measurement and a comparator circuit for comparing the level of the reference voltage to the level of the converted voltage and for producing a comparison signal representative of the difference in voltage levels compared thereby. The voltage regulation circuit is coupled to the comparator circuit and the reference voltage circuit and/or voltage conversion circuit for selectively adjusting the level of the reference voltage produced by the reference voltage circuit and/or the converted voltage produced by the voltage converter, to thereby control the comparison signal produced by the comparator circuit.

Claims

1. A reference voltage circuit to which a source voltage is applied comprising at least first and second pairs of complementary coupled P-channel and N-channel MOS transistors, said P-channel transistors in said first pair being coupled in series with said N-channel transistor in said first pair, said P-channel transistor in said second pair being coupled in series with said N-channel transistor in said second pair, at least one of said transistors in said first pair of complementary coupled P-channel and N-channel transistors having a different threshold voltage than the like polarity transistor in the second pair of complementary coupled P-channel and N-channel transistors, said first and second pairs of complementary coupled P-channel and N-channel MOS transistors defining at least a first predetermined voltage having a magnitude that is related to the difference in threshold voltages between said respective like polarity transistors in said first and second pairs, said predetermined voltage being substantially independent of variations in temperature and minor variations in said source voltage, said first and second pairs of complementary coupled P-channel and N-channel MOS transistors producing a set reference output voltage at said predetermined voltage in response to said source voltage, said at least first and second pairs of complementary coupled P-channel and N-channel MOS transistors being integrated into a single circuit chip.

2. The reference voltage circuit as claimed in claim 1, wherein at least one of said P-channel and N-channel transistors in said first pair includes a first gate and a first drain, said first gate being coupled to said first drain.

3. The reference voltage circuit as claimed in claim 2, wherein the other of said P-channel and N-channel transistors in said first pair includes a second gate, said transistor in said second pair which is of like polarity to said other transistor in said first pair having a third gate and a second drain, said second gate of said other transistor in said first pair and said third gate of like polarity transistor in said second pair both being coupled to said second drain of said like polarity transistor in said second pair.

4. The reference voltage circuit as claimed in claim 1, wherein said P-channel transistor in said first pair of transistors includes a gate and a drain, said gate being coupled to said drain, said N-channel transistor in said first pair having a gate, said N-channel transistor in said second pair of transistors including a gate and a drain, said gate of said N-channel transistor in said first pair and said gate of said N-channel transistor in said second pair being coupled to said drain of said N-channel transistor in said second pair of transistors.

5. In an integrated circuit on a single circuit chip, the improvement comprising a source voltage, a reference voltage circuit means for receiving said source voltage integrated into the same circuit chip as said integrated circuit, said reference voltage circuit means including at least first and second pairs of complementary coupled P-channel and N-channel MOS transistors, said P-channel transistor in said first pair being coupled in series with said N-channel transistor in said first pair, said P-channel transistor in said second pair being coupled in series with said N-channel transistor in said second pair, at least one of said transistors in said first pair of complementary coupled P-channel and N-channel transistors having a different threshold voltage than the like polarity transistor in the second pair of complementary coupled P-channel and N-channel transistors, said reference voltage circuit means defining at least a first predetermined voltage having a magnitude that is related to the difference in threshold voltages between said respective like polarity transistors in said first and second pairs, said predetermined voltage being substantially independent of variations in temperature and minor variations in said source voltage, said reference voltage circuit means producing a set reference output voltage at said predetermined voltage in response to said source voltage.

6. The integrated circuit as claimed in claim 5, wherein at least one of said P-channel and N-channel transistors in said first pair includes a first gate and a first drain, said first gate being coupled to said first drain.

7. The integrated circuit as claimed in claim 6, wherein the other of said P-channel and N-channel transistors in said first pair includes a second gate, said transistor in said second pair which is of like polarity to said other transistor in said first pair having a third gate and a second drain, said second gate of said other transistor in said first pair of said third gate of like polarity transistor in said second pair both being coupled to said second drain of said like polarity transistor in said second pair.

8. The integrated circuit as claimed in claim 5, wherein said P-channel transistor in said first pair of transistors includes a gate and a drain, said gate being coupled to said drain, said N-channel transistor in said first pair having a gate, said N-channel transistor in said second pair of transistors including a gate and a drain, said gate of said N-channel transistor in said first pair and said gate of said N-channel transistor in said second pair being coupled to said drain of said N-channel transistor in said second pair of transistors.