Etching techniques

• US 4,498,953 A
• Filed: 07/27/1983
• Issued: 02/12/1985
• Est. Priority Date: 07/27/1983
• Status: Expired due to Term

• Current Assignee: Bell Telephone Laboratories, Inc. (Nokia Corporation)
• Original Assignee: AT&T, Inc.
• Inventors: Donnelly, Vincent M., Flamm, Daniel L., Mucha, John A., Ibbotson, Dale E., Cook, Joel M.
• Primary Examiner(s): Powell, William A.
• Application Number:
  US06/517,754
• Time in Patent Office: 566 Days
• Field of Search: 156/643, 156/646, 156/654-659.1, 156/662, 156/664, 156/628, 252/79.1, 252/79.3, 204/192 E
• US Class Current: 438/738
• CPC Class Codes: C04B 41/5346 Dry etching
• CPC Class Codes: C09K 13/08 containing a fluorine compound
• CPC Class Codes: C23C 16/4405 Cleaning of reactor or parts inside the reactor by using reactive gases
• CPC Class Codes: C23F 1/12 Gaseous compositions
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 21/31116 by dry-etching
• CPC Class Codes: H01L 21/32136 using plasmas
• CPC Class Codes: H01L 21/32137 of silicon-containing layers
• CPC Class Codes: Y10S 148/105 Masks, metal

Abstract

A highly selective--greater than 100 to 1--etch for silicon, tantalum, tantalum silicide and tantalum nitride is achieved by using polyatomic halogen fluorides. The selectivity is achievable without employing plasmas or wet etching.

Claims

1. A process for manufacturing a device comprising the steps of (1) subjecting a substrate to an etchant to produce selective etching of a first region of said substrate relative to a second region and (2) completing said device characterized in that said etchant comprises a polyatomic halogen fluoride and said first region comprises a non-oxide tantalum composition wherein said substrate is subjected to said polyatomic halogen fluoride in the substantial absence of a plasma.

2. The process of claim 1 wherein said polyatomic halogen fluoride is chosen from the group consisting of BrF₅, BrF₃, ClF₃, and IF₅.

3. The process of claim 1 wherein said device comprises a hybrid, film integrated circuit.

4. The process of claim 1 wherein said tantalum composition comprises a member chosen from the group consisting of tantalum, tantalum nitride, and tantalum silicide.

5. The process of claim 1 wherein said second region comprises a tantalum oxide.

6. The process of claim 1 wherein said first region comprises a member chosen from the group consisting of silicon, molybdenum silicide, molybdenum, tungsten, and tungsten silicide.

7. The process of claim 1 wherein said device is a semiconductor device.

8. A process for treating a body comprising a first region and a second region, said process comprising the step of subjecting said body to an etchant to etch said first region, characterized in that said etchant comprises a polyatomic halogen fluoride wherein said substrate is subjected to said polyatomic halogen fluoride in the substantial absence of a plasma and wherein a substantial fraction of the thickness of said first region is removed.

9. The process of claim 8 wherein said polyatomic halogen fluoride is chosen from the group consisting of BrF₅, BrF₃, ClF₃, and IF₅.

10. The process of claim 8 wherein said first region comprises a silicon oxide and said second region comprises silicon.

11. The process of claim 8 wherein said body comprises a contaminated deposition apparatus where said first region is said contamination.

12. A process for manufacturing a device comprising the steps of (1) subjecting a substrate to an etchant to produce selective etching of a first region of said substrate relative to a second region and (2) completing said device characterized in that said etchant comprises a polyatomic halogen fluoride wherein said substrate is subjected to said polyatomic halogen fluoride in the substantial absence of a plasma, and wherein a substantial fraction of the thickness of said first region is removed.

13. The process of claim 12 wherein said polyatomic halogen fluoride is chosen from the group consisting of BrF₅, BrF₃, ClF₃, and IF₅.

14. The process of claim 12 wherein said device is a semiconductor device.

15. The process of claim 12 wherein said device comprises a hybrid, film integrated circuit.

16. The process of claim 12 wherein said first region comprises a non-oxide tantalum composition.

17. The process of claim 16 wherein said tantalum composition comprises a member chosen from the group consisting of tantalum, tantalum nitride, and tantalum silicide.

18. The process of claim 12 wherein said second region comprises a tantalum oxide.

19. The process of claim 12 wherein said first region comprises a member chosen from the group consisting of silicon, molybdenum silicide, molybdenum, tungsten, and tungsten silicide.

20. The process of claim 12 wherein said second region comprises a member chosen from the group consisting of a silicon oxide and a silicon nitride.

21. A process for manufacturing a device comprising the steps of (1) subjecting a substrate to an etchant to produce selective etching of a first region of said substrate relative to a second region and (2) completing said device characterized in that said etchant comprises a polyatomic halogen fluoride wherein said substrate is subjected to said polyatomic halogen fluoride in the substantial absence of a plasma and wherein said first region comprises a member chosen from the group consisting of silicon, molybdenum silicide, molybdenum, tungsten, and tungsten silicide.

22. The process of claim 21 wherein said second region comprises a member chosen from the group consisting of a silicon oxide and a silicon nitride.