FET Controlled thyristor

• US 4,502,070 A
• Filed: 06/22/1981
• Issued: 02/26/1985
• Est. Priority Date: 06/26/1980
• Status: Expired due to Fees

• Current Assignee: Siemens AG
• Original Assignee: Siemens AG
• Inventors: Tihanyi, Jeno, Leipold, Ludwig, Stengl, Jens P.
• Primary Examiner(s): James, Andrew J.
• Assistant Examiner(s): Lamont, John
• Application Number:
  US06/276,196
• Time in Patent Office: 1,345 Days
• Field of Search: 357/38, 357/39, 357/43, 357/23 R, 357/23 C, 357/23 VD, 307/252 T, 307/252 B, 307/305, 307/311
• US Class Current: 257/138
• CPC Class Codes: H01L 29/7432 Asymmetrical thyristors with a particular shorted anode structure H01L29/0834
• CPC Class Codes: H01L 29/7455 produced by an insulated gate structure
• CPC Class Codes: H01L 29/749 with turn-on by field effect

Abstract

Controlled semiconductor switch with a semiconductor body containing a thyristor structure having a first zone of first conductivity type embedded in coplanar relationship in a second zone of second conductivity type; also containing a third zone of the first conductivity type and a fourth zone of the second conductivity type; and further containing an MIS-FET integrated into the semiconductor body and having a source zone of the first conductivity type embedded in coplanar relationship in a zone of the second conductivity type; an insulating layer disposed on the surface of the semiconductor body, a control electrode lying on the insulating layer and covering a first channel zone operatively associated with the FET; and a cathode electrode on the semiconductor body, including the features that the zone of the second conductivity type of the MIS-FET is embedded in the third zone in coplanar relationship therewith and forms the first channel zone at the surface of the semiconductor body; the second zone of the thyristor structure is embedded in the third zone in coplanar relationship therewith and forms a second channel zone at the surface of the semiconductor body; the third zone extends to the surface of the semiconductor body between the two channel zones; the control electrode also covers the second channel zone and the part of the third zone extending to the surface of the semiconductor body; and the cathode electrode is in contact with the source zone of the MIS-FET.

Claims

1. Controlled semiconductor switch with a semiconductor body containing a thyristor structure having a first zone of first conductivity type, free of external connection, embedded in coplanar relationship in a second zone of second conductivity type, free of external connection;

also containing a third zone of the first conductivity type and a fourth zone of the second conductivity type; and

further containing an MIS-FET integrated into the semiconductor body and having a source zone of the first conductivity type embedded in coplanar relationship in a zone of the second conductivity type;

an insulating layer disposed on the surface of the semiconductor body, a control electrode lying on the insulating layer and covering a first channel zone operatively associated with the FET; and

a cathode electrode on the semiconductor body, comprising the features that;

(a) the zone of the second conductivity type of the MIS-FET constitutes a fifth zone of the semiconductor body and is embedded in the third zone in coplanar relationship therewith and forms the first channel zone at the surface of the semiconductor body;

(b) the source zone of the first conductivity type of the MIS-FET constitutes a sixth zone of the semiconductor body and is embedded in said fifth zone in coplanar relationship therewith;

(c) the second zone of the thyristor structure is embedded in the third zone in coplanar relationship therewith and forms a second channel zone at the surface of the semiconductor body;

(d) the third zone extends to the surface of the semiconductor body between the two channel zones;

(e) the control electrode also covers said second channel zone and the part of the third zone extending to the surface of the semiconductor body; and

(f) the cathode electrode is in contact with the source zone of the MIS-FET.

2. Semiconductor switch according to claim 1, wherein the cathode electrode is also in contact with the zone of the second conductivity type of the FET constituting the sixth zone of the semiconductor body.

3. Semiconductor switch according to claim 1 wherein the fourth zone is disposed at a side of the semiconductor body facing away from the cathode electrode.

4. Semiconductor switch according to claim 3 including a heavily doped region of the first conductivity type located between and adjacent to the third zone and the fourth zone.

5. Semiconductor switch according to claim 1 wherein the fourth zone is embedded in the semiconductor body at that side thereof which carries the cathode electrode.

6. Semiconductor switch according to claim 5 wherein the fourth zone is surrounded by a heavily doped region of the first conductivity type which is embedded in the third zone.