Method for fabricating overlaid device in stacked CMOS

• US 4,502,202 A
• Filed: 06/17/1983
• Issued: 03/05/1985
• Est. Priority Date: 06/17/1983
• Status: Expired due to Fees

• Current Assignee: Texas Instruments, Inc.
• Original Assignee: Texas Instruments, Inc.
• Inventors: Malhi, Satwinder
• Primary Examiner(s): NOT, DEFINED
• Application Number:
  US06/505,155
• Time in Patent Office: 627 Days
• Field of Search: 29/571
• US Class Current: 438/153
• CPC Class Codes: H01L 21/8221 Three dimensional integrated circuits stacked in different levels

Abstract

In stacked CMOS, a single gate in first level polysilicon is used to address both an n-channel device in the substrate and an overlaid p-channel device. The p-channel polysilicon device has its channel self-aligned to the gate, by the use of a boron-doped oxide at the sidewalls of the gate. This boron-doped oxide provides a dopant source which dopes the second polysilicon layer to provide heavily doped source/drain extension regions which are self-aligned to the gate in first poly. A mask level is still required to pattern the sources and drains, but the self-aligned source/drain extension regions mean that the source/drain mask level can have a reasonable alignment tolerance.

Claims

1. A method for fabricating a stacked CMOS device, comprising the steps of;

providing a substrate;

growing a gate oxide on said substrate;

forming a gate electrode in desired gate locations, said gate electrode being formed to have substantially vertically sidewalls in desired gate locations;

depositing and anistropically etching a dopant source material, to provide sidewall filaments of said dopant source adjacent to said sidewalls of said gate electrode;

depositing a thin polysilicon layer over all, said thin polysilicon layer being insulated from said gate electrode and comprising a second-type dopant;

providing a mask over said gate electrode, said mask being wider than the width of said gate electrode, and implanting a heavy concentration of a second-conductivity type dopant into said thin polysilicon layer;

whereby said gate electrode addresses both a field effect transistor having first-type sources and drains in said substrate, and a field effect transistor having second-type sources and drains and a polysilicon channel.

2. The method of claim 1, further comprising the subsequent step of:

introducing a passivating species into said thin polysilicon layer, to improve the effective mobility of carriers in said thin polysilicon layer.

3. The method of claim 2, wherein said passivation step comprises exposure to a hydrogen plasma.

5. The method of claim 1, further comprising the subsequent step of:

interconnecting predetermined ones of said first-conductivity-type and said second conductivity-type transistors to achieve a desired circuit function.

4. The method of claim 10, further comprising the step of:

patterning said thin polysilicon layer to achieve a desired device configuration.