Diamond-like film and process for producing same

• US 4,504,519 A
• Filed: 11/03/1983
• Issued: 03/12/1985
• Est. Priority Date: 10/21/1981
• Status: Expired due to Fees

• Current Assignee: RCA Corporation
• Original Assignee: RCA Corporation
• Inventors: Zelez, Joseph
• Primary Examiner(s): NOT, DEFINED
• Assistant Examiner(s): Capella, Steven
• Application Number:
  US06/548,040
• Time in Patent Office: 495 Days
• Field of Search: 423/445, 423/446, 423/448, 423/458, 427/39, 427/122, 427/249, 204/173, 428/408
• US Class Current: 427/577
• CPC Class Codes: C03C 17/22 with other inorganic material C03C17/34, C03C17/44 take precedence
• CPC Class Codes: C03C 2217/282 Carbides, silicides
• CPC Class Codes: C03C 2218/153 by plasma-enhanced cvd
• CPC Class Codes: C23C 16/26 Deposition of carbon only
• CPC Class Codes: Y10T 428/30 Self-sustaining carbon mass or layer with impregnant or other layer

Abstract

An amorphous, carbonaceous, diamond-like film and a process for producing the same is disclosed. The film has an extremely low hydrogen content and an extremely low stress, is resistant to both acids and alkalis, and adheres tenaciously to many types of substrates including glasses, plastics, metals, and semiconductors. The process for producing this film is a hybrid process using radio frequency plasma decomposition of an alkane and a pair of spaced carbon electrodes.

Claims

1. A process for depositing an amorphous, carbonaceous film having a stress below 10¹⁰ dynes/cm² and a hydrogen content of one or less atomic percent on a substrate in an evacuated deposition chamber having an internal pair of substantially horizontal and parallel, vertically spaced carbon electrodes, and means for applying radio frequency power to said pair of electrodes;

comprising the steps of;

(a) positioning said substrate on the lower electrode of said pair of electrodes;

(b) stabilizing the pressure within said deposition chamber with a lower alkane containing from 1 up to about 6 carbon atoms at a pressure of from about 25 up to about 100 millitorr;

(c) applying radio frequency power to said pair of electrodes; and

(d) biasing the upper electrode of said pair in the range of from about -200 to about -3500 volts and said lower electrode in the range of from about 0 to about -100 volts, whereby said film deposits on said substrate by radio frequency plasma decomposition of said lower alkane.

2. A process as defined in claim 1 wherein said spacing of said parallel electrodes is from about 2 up to about 8 centimeters.

3. A process as defined in claim 1 wherein said vertical spacing of said pair of electrodes is from about 2.5 to about 6.0 centimeters.

4. A process as defined in claim 1 wherein said deposition chamber is stabilized at a pressure of from about 35 up to about 85 millitorr.

5. A process as defined in claim 1 wherein said lower alkane is n-butane.

6. A process as defined in claim 1 wherein said upper electrode is biased in the range of from about -250 to about -2500 volts.

7. A process as defined in claim 1 wherein said lower electrode is biased in the range of from about -25 to about -75 volts.